ZnSe及ZnSe/GaAs异质结构中压力导致的直接禁带向间接禁带的转变

用经验赝势方法计算了体ZnSe以及ZnSe/GaAs单异质结系统中ZnSe外延层г、X、L等特殊对称点导带底能量随压力的变化。结果表明，同Si、Ge、GaAs等半导体材料不同，ZnSe的X点导带底具有正的压力系数，但比г点的压力系数小，这是ZnSe材料以及ZnSe基异质结构材料发生直接禁带向间接禁带的转变时所需转变压力较大的根本原因。研究了ZnSe/GaAs异质结构中晶格失配造成的应变对外延层г、X、L对称点压力系数的影响，表明这种晶格失配造成的应变可以极大地减小ZnSe外延层材料由直接禁带向间接禁带的转变压力。     

基于BOOSt结构下不连续导电模式的PFC电路

采用现代高频功率变换技术的有源功率因数校正（Power Factor Corrector,PFC)技术是解决高频开关变换器谐波污染的有效手段。与传统的PFC电路相比，有源PFC电路的输入电流接近正弦波且与输与电压同相位，能有效抑制电流波形畸变和谐波，因此避免了对同一电网设施的干扰。在PFC电路中，Boost变换器是研究和应用得最多的一种变换器。本文着重分析了Boost电路在不连续导电模式状态下，PFC电路的临界条件，对实际电路结构的设计有很好的指导意义。     

Single-mode rib polymer waveguides and electro-optic polymer waveguide switches

Mode-matching and effective index methods are used to analyze single-mode operation of optical rib polymer waveguides. Their single-mode waveguiding conditions are determined. Single-mode rib waveguides fabricated from guest–host polyetherketone are presented. The estimated propagation loss of straight rib-waveguides is 0.7 dB/cm at 1.55 μm. Furthermore, by using the mode field-transfer matrix method, 2×2 and 4×4 polymer Mach–Zehnder interference switch operating at 1.55 μm wavelength has been designed based on optical multi-mode interference.     

一类积分不等式的推广

对一些基本的积分不等式进行了推广，给出了含有n个无关变元的更广泛的非线性积分不等式．利用所得的不等式讨论了某些非线性积分方程解的有界性．     

基于双因子认证技术的网络身份识别

本文提出了一种基于动态双因子认证技术的网络身份识别方法,用户每次登录的口令是利用系统时间和用户ID通过MD5加密算法计算得到,其通过MD5加密后生成的登录口令是随机的,这将进一步提高开放网络环境下身份识别的可靠性和安全性。同时,本文还提出网络身份识别技术可以应用到各类网站的服务器上,用来完成对用户身份的识别,以提高网络系统的安全性。     

The Iyengar Type Inequalities with Exact Estimations and the Chebyshev Central Algorithms of Integrals

In this paper, both low order and high order extensions of the Iyengar type inequality are obtained. Such extensions are the best possible in the same sense as that of the Iyengar inequality. hzrthermore, the Chebyshev central algorithms of integrals for some function classes and some related problems are also considered and investigated.     

Solid-state Electrochemistry of Gadolinium Hexacyanoferrate Modified Electrode and Electrocatalytic Properties of Gadolinium Hexacyanoferrate

A new electroactive polynuclear inorganic compound of rare earth metal, gadolinium hexacyanoferrate (GdHCF), was prepared and characterized using the techniques of FTIR spectroscopy, thermogravimetric analysis (TG), UV-Vis spectrometry, X-ray photoelectron spectroscopy (XPS), ICP atomic emission spectroscopy, and EDX. The results of ICP atomic emission spectroscopy, EDX, and TGA indicated that the prepared GdHCF sample had a stoichiometry of NaGdFe(CN)₆·12H₂O (when GdHCF was prepared in NaCl solution). The FTIR spectrum of GdHCF showed that there were two types of water molecules in the structure of GdHCF: one was the interstitial water (5 H₂O), which resulted from the association of water due to H-bonding, and the other was water coordinated with Gd (7 H₂O). The results obtained using XPS showed that the oxidation state of Fe and Gd in the GdHCF sample was +2 and +3, respectively. GdHCF was immobilized on the surface of spectroscopically pure graphite (SG) electrode forming the GdHCF/SG electrode, and the solid-state electrochemistry of the resultant electrode was studied using cyclic voltammetry. The cyclic voltammetric results indicated that the GdHCF/SG electrode exhibited a pair of well-defined and stable redox peaks with the formal potential of E^0′=(197±3) mV. The effects of the concentration of the supporting electrolyte on the electrochemical characteristics of GdHCF were studied, and the results showed that the value of E^0′ increased linearly with the activity of the cationic ion of the supporting electrolyte (lga_Na⁺), with a slope of 54.1 mV, which may become a novel method for determining the activity of Na⁺ in solution. Further experimental results indicated that GdHCF had electrocatalytic activities toward the oxidation of dopamine (DA) and ascorbic acid (AA), and the electrocatalytic current increased linearly with the concentration of DA (or AA) in the range of 1.0–10.0 mmol·L^?1 (for DA) or 0.5–20.0 mmol·L^?1 (for AA).     

Equivalent circuit model of on-wafer CMOS interconnects for RFICs

This paper investigates the properties of the on-wafer interconnects built in a 0.18-/spl mu/m CMOS technology for RF applications. A scalable equivalent circuit model is developed. The model parameters are extracted directly from the on-wafer measurements and formulated into empirical expressions. The expressions are in functions of the length and the width of the interconnects. The proposed model can be easily implemented into commercial RF circuit simulators. It provides a novel solution to include the frequency-variant characteristics into a circuit simulation. The silicon-verified accuracy is proved to be up to 25 GHz with an average error less than 2%. Additionally, equivalent circuit model for longer wires can be obtained by cascading smaller subsections together. The scalability of the propose model is demonstrated.     

Nanoscale structural characteristics and electron field emission properties of transition metal–fullerene compound TiC60 films

Transition-metal compound TiC₆₀ thin films were grown by co-deposition from two separated sources of fullerene C₆₀ powder and titanium. Study of structural properties of the films, by Raman spectroscopy, atomic force microscopy, and scanning tunneling spectroscopy reveals that the films have a deformed C₆₀ structure with certain amount of sp³ bonds and a rough surface with a large number of nanoclusters. z–V tunnelling spectroscopic measurements suggest that several charge transport mechanisms are involved in as the tip penetrates into the thin film. Conventional field electron emission (FEE) measurements show a high emission current density of 10 mA/cm² and a low turn-on field less than 8 V/μm, with the field enhancement factors being 659 and 1947 for low-field region and high-field region, respectively. By exploiting STM tunneling spectroscopy, local FEE on nanometer scale has also been characterized in comparison with the conventional FEE. The respective field enhancement factors are estimated to be 99–355 for a gap varying from 36 to 6 nm. The enhanced FEE of TiC₆₀ thin films can be ascribed to structural variation of C₆₀ in the films and the electrical conducting paths formed by titanium nanocrystallites embedded in C₆₀ matrix.     

Asymmetric Regulation System Fit for Chinese Telecom Market

After the new round of restructuring of Chinese telecom sector,it's pressing to formulate and implement asymmetric regulation policies so as to shape an effectively competitive market structure in a relatively short term.This paper reviewed the asymmetric regulation policies and practices carried out in foreign telecom market,and then according to the specific situations of Chinese telecom market,proposed the principles and corresponding policies for establishing an asymmetric regulation system fit for Chin...