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291.
The magnetic and electric properties of the Sr2FeMoO6 compound produced under different preparation conditions were studied. Depending on the preparation condition, a strong variation in the nonmagnetic SrMoO4 impurity content was found, which in turn determined the metallic or semiconducting behavior of the resistivity of the Sr2FeMoO6 compound. There was also evidence that SrMoO4 played a crucial role in modifying the low magnetic field intergrain tunneling magnetoresistance in Sr2FeMoO6. In addition, we have established a simple method to prepare the single phase Sr2FeMoO6 polycrystals. 相似文献
292.
为提高硅晶片双面超精密抛光的抛光速率,在分析双抛工艺过程基础上,采用自制大粒径二氧化硅胶体磨料配制了SIMIT8030-Ⅰ型新型纳米抛光液,在双垫双抛机台上进行抛光实验.抛光液、抛光前后厚度、平坦性能及粗糙度通过SEM、ADE-9520型晶片表面测试仪、AFM进行了表征.结果表明:与进口抛光液Nalco2350相比,SIMIT8030-Ⅰ型抛光液不仅提高抛光速率40%(14μm/h vs 10μm/h);而且表面平坦性TTV和TIR得到改善;表面粗糙度由0.4728nm降至0.2874nm,即提高抛光速率同时显著改善了抛光表面平坦性和粗糙度. 相似文献
293.
Young-Hwan You Won-Gi Jeon Jong-Ho Paik Dae-Ki Hong Hyoung-Kyu Song 《Broadcasting, IEEE Transactions on》2003,49(4):354-361
In this paper, an OFDM-CDMA system employing various diversity schemes is considered for a possible candidate of broadband wireless access networks and broadcasting applications. With an emphasis on a preamble design for multi-channel separation, we address a channel estimation based on the time-domain windowing and its imperfectness in OFDM-based multiple-antenna transmission systems. By properly designing each preamble for multiple antennas to be orthogonal in the time domain, the channel estimation can be applied to the HIPERLAN/2 and IEEE 802.11a standards in the case of more than two transmit antennas. Also, the effect of diversity techniques on the performance of OFDM-CDMA based broadband wireless access networks is investigated and the maximum achievable diversity gain for a two-path Rayleigh fading environment is evaluated. Simulation results show that the OFDM-CDMA system applying a space-time-frequency diversity with a full-rate full diversity code can give the diversity of D=4 and D=8 for both multi-user cases of maximum user and half user capacities, respectively. 相似文献
294.
295.
M.H. Song B. Park S. Nishimura T. Toyooka I.J. Chung Y. Takanishi K. Ishikawa H. Takezoe 《Advanced functional materials》2006,16(14):1793-1798
A liquid crystal (LC) photonic device with an anisotropic optical heterojunction structure has been fabricated. The device has a phase‐retarding nematic LC (NLC) layer sandwiched between two polymer cholesteric LC films with right‐handed helices of different pitches. Electrotunable non‐reciprocal light transmittance and unidirectional circularly polarized (CP) lasing emission have been successfully demonstrated for this device structure. Two left CP (LCP) lasing emission peaks are observed at the edges of the overlapping region between the two photonic bands in the structure and are shifted upon the application of a voltage. In contrast, a non‐reciprocal right CP (RCP) lasing emission peak emerges at one of the band edges and diminishes upon the application of a voltage. These phenomena are interpreted based on the selective reflection of RCP light and the reorientation of the NLC molecules by the application of a voltage. 相似文献
296.
297.
Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers 总被引:2,自引:0,他引:2
Dang G.T. Mehandru R. Luo B. Ren F. Hobson W.S. Lopata J. Tayahi M. Chu S.N.G. Pearton S.J. Chang W. Shen H. 《Lightwave Technology, Journal of》2003,21(4):1020-1031
Process technology of high-speed implant-apertured index-guide lateral-current-injection top dielectric-mirror quantum-well 850-nm vertical cavity surface-emitting lasers (VCSELs) has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, VCSEL resistance, and thermal analysis were investigated. Employing this technology, GaAs/AlGaAs-based 850-nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence of 2/sup 31/-1 were achieved. The bit-error rates were below 10/sup -13/. The threshold current is as low as 0.8 mA for 7-/spl mu/m-diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW were obtained. 相似文献
298.
299.
Chang S.J. Chang C.S. Su Y.K. Lee C.T. Chen W.S. Shen C.F. Hsu Y.P. Shei S.C. Lo H.M. 《Advanced Packaging, IEEE Transactions on》2005,28(2):273-277
Nitride-based flip-chip indium-tin-oxide (ITO) light-emitting diodes (LEDs) were successfully fabricated. It was found that the forward voltage and the 20 mA output power of the flip-chip ITO LED were 3.32 V and 14.5 mW, respectively. Although the operation voltage of such a flip-chip ITO LED was slightly larger, it was found that its output power was much larger than those of conventional nonflip-chip LEDs. It was also found that flip-chip ITO LEDs were more reliable. 相似文献
300.
K- and Q-bands CMOS frequency sources with X-band quadrature VCO 总被引:1,自引:0,他引:1
Sangsoo Ko Jeong-Geun Kim Taeksang Song Euisik Yoon Songcheol Hong 《Microwave Theory and Techniques》2005,53(9):2789-2800
Fully integrated 10-, 20-, and 40-GHz frequency sources are presented, which are implemented with a 0.18-/spl mu/m CMOS process. A 10-GHz quadrature voltage-controlled oscillator (QVCO) is designed to have output with a low dc level, which can be effectively followed by a frequency multiplier. The proposed multipliers generate signals of 20 and 40 GHz using the harmonics of the QVCO. To have more harmonic power, a frequency doubler with pinchoff clipping is used without any buffers or dc-level shifters. The QVCO has a low phase noise of -118.67 dBc/Hz at a 1-MHz offset frequency with a 1.8-V power supply. The transistor size effect on phase noise is investigated. The frequency doubler has a low phase noise of -111.67 dBc/Hz at a 1-MHz offset frequency is measured, which is 7 dB higher than a phase noise of the QVCO. The doubler can be tuned between 19.8-22 GHz and the output is -6.83 dBm. A fourth-order frequency multiplier, which is used to obtain 40-GHz outputs, shows a phase noise of -102.0 dBc/Hz at 1-MHz offset frequency with the output power of -18.0 dBm. A large tuning range of 39.3-43.67 GHz (10%) is observed. 相似文献