The colloidal stability and core-shell structure of magnetite nanoparticles coated with alginate

The adsorption of alginate (Alg) onto the surface of in water dispersed Fe₃O₄ nanoparticles and zeta potential of alginate-coated Fe₃O₄ nanoparticles have been investigated to optimize the colloidal stability of Alg-coated Fe₃O₄ nanoparticles. The adsorption amount of Alg increased with the decrease of adsorption pH. The zeta potential of Fe₃O₄ nanoparticles shifted to a lower value after adsorption of Alg. The lower adsorption pH was the lower zeta potential of Fe₃O₄ nanoparticles became. The Alg-coated Fe₃O₄ nanoparticles were found to be stabilized by steric and electrostatic repulsions. Those prepared at pH 6 were not stable around pH 5, and those prepared at pH 4 became unstable at pH below 3.5. Alg of M_w 45 kDa was a little bit more adsorbed onto nanoparticles surface than that of M_w 24 kDa. An average Fe₃O₄ core size of 9.3 ± 1.7 nm was found by transmission electronic microscopy. An average hydrodynamic diameter of 30-150 nm was measured by photon correlation spectroscopy. However, an average core size of 10 nm and an average hydrodynamic diameter of 38 nm were estimated from the magnetization curve of the concentrated magnetic fluids (MFs). The maximum available saturation magnetization of MFs was about 3.5 kA/m.     

Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications

The purpose of this paper is to report some experimental results with HfSiO films formed on silicon substrates by electron beam evaporation (EB-PVD) and annealed at different temperatures. The images of atomic force microscope (AFM) indicated that HfSiO film annealed at 900 °C was still amorphous, with a surface roughness of 0.173 nm. X-ray photoelectron spectroscopy (XPS) analysis revealed that the chemical composition of the film was (HfO₂)₃(SiO₂) and Hf-Si-O bonds existed in the annealed film. Electrical measurements showed that the equivalent oxide thickness (EOT) was 4 nm, the dielectric constant was around 6, the breakdown voltage was 10 MV/cm, the fixed charge density was −1.2 × 10¹² cm⁻², and the leakage current was 0.4 μA/cm² at the gate bias of 2 V for 6 nm HfSiO film. The annealing after deposition effectively reduced trapping density and the leakage current, and eliminated hysteresis in the C-V curves. Annealing also induced SiO₂ growth at the interface.     

声光技术在光纤系统中的应用

本文简要介绍了在光纤通信、光纤传感和光纤信号处理枝术等各种光纤系统中可能开发应用的固体声光技术和光纤声光技术。     

Template atom transfer radical polymerization of a diaminopyrimidine‐derivatized monomer in the presence of a uracil‐containing polymer

Uracil‐derivatized monomer 6‐undecyl‐1‐(4‐vinylbenzyl)uracil and diaminopyrimidine‐derivatized monomer 2,6‐dioctanoylamido‐4‐methacryloyloxypyrimidine (DMP) were synthesized and polymerized by atom transfer radical polymerization (ATRP). A well‐defined, highly soluble, uracil‐containing polymer, poly[6‐undecyl‐1‐(4‐vinylbenzyl)uracil] (PUVU), was prepared in dioxane at 90 °C with CuBr/1,1,4,7,10,10‐hexamethyltriethylenetetramine as the catalyst and methyl α‐bromophenylacetate as the initiator. PUVU was further used as a template for the ATRP of DMP. The enhanced apparent rate constant of the DMP polymerization in the presence of PUVU indicated that the ATRP of DMP occurred along the PUVU template. The template polymerization produced a stable and insoluble macromolecular complex, PUVU/poly(2,6‐dioctanoylamido‐4‐methacryloyloxypyrimidine). An X‐ray diffraction study confirmed that the complex had strandlike domains. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 6607–6615, 2006     

Optical properties of In2O3 oxidized from InN deposited by reactive magnetron sputtering

Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In₂O₃ films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8-1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In₂O₃:Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively.     

A pair of orthogonal frames

We start with a characterization of a pair of frames to be orthogonal in a shift-invariant space and then give a simple construction of a pair of orthogonal shift-invariant frames. This is applied to obtain a construction of a pair of Gabor orthogonal frames as an example. This is also developed further to obtain constructions of a pair of orthogonal wavelet frames.     

双折射双频激光器偏振特性的分析

用激光原理和晶体光学原理分析了腔内加旋光晶体的激光器输出光的偏振特性，实验和分析表明，激光器输出两束不同频率的垂直线偏振光，激光器两端输出光的偏振面有一夹角ａ，且此夹角与晶轴和传光方向的夹角θ有关。理论计算结果在双折射双频激光器的实验结果符合很好。     

800nm激光泵浦掺Nd^3＋的氟化物玻璃光纤正向双程超荧光分析

从实验上探讨了掺Ｎｄ＾３＋的氟化物玻璃光纤正向双程超荧光基本特性，包括输入－输出特性、输出－带宽特性以及输出－波长（激发）特性。并给出了理论上的拟合公式，实验表明利用氟化物玻璃光纤有望获得性能优异的有应用前景的低相干度集成化光源。     

电子碰撞诱导原子从低激态向高激态弛豫

本文根据空心阴极放电中电子能量分布的物理图象,分析了原子从低激态向高激态弛豫的可能途径。建立高低激态集居数密度增量的关系。讨论高激态集居数密度增量获得可观量的条件。根据此条件分别选取钠原子的基态3s~2S_(1/2)和铜原子的亚稳态4s~2D_(3/2)为与激光共振的下能级,并激发具有较大自发发射几率的3s~2S_(1/2)→3p~2P°_(1/2)(和3p~2P°_(3/2))和4s~2D_(3/2)→4p~2P°_(1/2)跃迁,在远离上能级的高激态上观测到敏化荧光,并精确测得这些态的自发发射系数比值,而在更高激态上没有观测到敏化荧光,表明讨论中提出的条件是合理的。     

高纯金属镨中痕量稀土杂质的电感耦合等离子体原子发射光谱分析及光谱干扰的校正

本文提出了PGS-2型平面光栅光谱仪(色散率0.18纳米,二级光谱)与PlasmaTherm ICP-5000D射频发生器联用,乙醇预去溶方式进样,同时直接测定高纯金属镨中5个痕量稀土杂质元素的方法。并讨论了基体浓度对检出限的影响以及光谱干扰及其校正方法。当样品溶液中镨的浓度为5毫克/毫升时,测定下限分别为镧、钕和钐0.002%,铈0.003%和钇0.0005%。获得了良好的实验结果,其相对标准偏差为1.2-6.2%。