Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

Stationary turbulent closure via the Hopf functional equation

Exact closed-form solutions are exhibited for the Hopf equation for stationary incompressible 3D Navier-Stokes flow, for the cases of homogeneous forced flow (including a solution with depleted nonlinearity) and inhomogeneous flow with arbitrary boundary conditions. This provides an exact method for computing two- and higher-point moments, given the mean flow.     

SEPARATING SCN~- FROM DESULPHURIZATION WASTE SOLUTION OF COCKING PLANT BY D241 RESIN

1. INTRODUCTION In the process of coking plant, about 30%~35% sulfur is transformed to H2S and some other sulfide, which form impurity in coal gas together with NH3 and HCN. Only 0.1% H2S containing in air can lead to die, so it is very important to carry on desulphurization and decyanation with coal gas [1~3]. Currently desulphurization and decyanation craft technique have Dry Oxidation Technology, Wet Oxidation Technology and Liquid Absorption Technology [2] three main kinds. The…     

GAUSSIAN WHITE NOISE CALCULUS OF GENERALIZED EXPANSION

A new framework of Gaussian white noise calculus is established, in line with generalized expansion in [3, 4, 7]. A suitable frame of Fock expansion is presented on Gaussian generalized expansion functionals being introduced here, which provides the integral kernel operator decomposition of the second quantization of Koopman operators for chaotic dynamical systems, in terms of annihilation operators dt and its dual, creation operators t*.     

非傍轴平顶高斯光束M2因子两种定义的比较研究

基于功率密度的二阶矩方法，推导出了非傍轴平顶高斯(FG)光束束宽和远场发散角的解析表达式.研究表明，当w0/λ→0时，远场发散角趋于渐近值θmax=63.435°，与阶数无关.使用非傍轴高斯光束代替傍轴高斯光束作为理想光束，研究了非傍轴FG光束的M2因子，并与传统定义的M2因子作了比较.在非傍轴范畴，非傍轴FG光束的M2因子不仅与阶数N有关，而且与w0/λ有关.按照定义，当w0/λ→0时，非傍轴FG光束的M2因子不等于0，对阶数N=1, 2, 3时，M2因子分别趋于0.913,0.882和0.886.当N→∞时，M2因子取最小值M2min=0.816.     

The entropy of Garfinkle-Horne dilaton black hole due to arbitrary spin fields

Using the membrane model which is based on brick wall model, we calculated the free energy and entropy of Garfinkle-Horne dilatonic black hole due to arbitrary spin fields. The result shows that the entropy of scalar field and the entropy of Fermionic field have similar formulas. There is only a coefficient between them.     

平面近场测试系统在天线测试和诊断中的应用

介绍了天线近场测量的基本原理和HD-1型平面近场测试系统,并对近场测量在实际天线测试中的应用情况、发展方向和应用前景等作了简单的描述。     

用于机械振动实时监测的光纤光栅有源传感装置

把一对中心反射波长分别为1562.11nm和1562.71nm的光纤光栅粘贴在均质、等厚、等腰三角形悬臂梁上下表面作为环形腔光纤激光器端镜，当机械振动激励自由端时，通过观测激光输出脉冲，地施加于自由端的机械振动的频率进行了实时监测；观察两光栅波长漂移量差值的变化，可在0～6.1mm的范围内判断所测振动的振幅。低于100Hz时，实验结果与实际值基本吻合。     

iShopFloor: an Internet-enabled agent-based intelligent shop floor

Global competition is driving manufacturing companies to change the way they do business. New kinds of shop floor control systems need to be implemented for these companies to respond quickly to changing shop floor environments and customer demands. This paper presents a new concept called iShopFloor-an intelligent shop floor based on the Internet, web, and agent technologies. It focuses on the implementation of distributed intelligence in the manufacturing shop floor. The proposed approach provides the framework for components of a complex control system to work together as a whole rather than as a disjoint set. It encompasses both information architecture and integration methodologies. The paper introduces the basic concept of iShopFloor, a generic system architecture, and system components. It also describes the implementation of eXtensible Markup Language message services in iShopFloor and the application of intelligent agents to distributed manufacturing scheduling. A prototype environment is presented, and some implementation issues are discussed.     

Crystallographic report: Bis{[diacetyl‐bis(2,6‐isopropylphenylimine)]nickel(I)(µ‐chloro)}

The first α‐diimine nickel(I) complex having a chloro bridge is reported. The centrosymmetric dinuclear structure of {[ArN?C(Me)C(Me)?NAr]NiCl}₂[Ar?2,6?C₆H₃(i‐Pr)₂] features two chelating α‐diimine ligands and two bridged chlorine atoms, so that a distorted tetrahedral N₂Cl₂ coordination geometry for nickel results. Copyright © 2004 John Wiley & Sons, Ltd.