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51.
超临界流体色谱流程设计及其应用 总被引:1,自引:1,他引:0
本文设计了多功能超临界流体色谱流程,流程中包括毛细管/微填充柱SFC,GC,计算机控制温度、压力、密度及信号采集、处理,配置有超临界流体萃取池,解决了超临界流体色谱分流口易堵问题。利用该流程,将石腊、DC-200气相色谱固定相、黄油、蜂蜡、救心油、红花油等样品进行超临界流体色谱分离。 相似文献
52.
制作压力传感器时,在二氧化硅层上淀积多晶硅膜,既可利用优良的机械特性,又可保证压敏电阻与衬底间具有良好的绝缘性,由此可大大提高器件的温度特性。介绍了一种多晶硅压力传感器的原理和设计。实验结果表明,这类传感器具有灵敏度好,精度高等特点,电路工作范围为0-250℃,且具有良好的温度稳定性。 相似文献
53.
A new secoiridoid, multiflorin (1) has been isolated from the EtOAc-soluble fraction of Jasminum multiflorum (Oleaceace). The structure of I was determined by application of spectral methods. 相似文献
54.
A profit-maximizing supply chain network design model with demand choice flexibility 总被引:1,自引:0,他引:1
Zuo-Jun Max Shen 《Operations Research Letters》2006,34(6):673-682
We present a profit-maximizing supply chain design model in which a company has flexibility in determining which customers to serve. The company may lose a customer to competition if the price it charges is too high. We show the problem formulation and solution algorithm, and discuss computational results. 相似文献
55.
Wei Gengping~ Shen Jianhua~ 《高校应用数学学报(英文版)》2006,21(3):320-326
This paper studies the nonautonomous nonlinear system of difference equationsΔx(n)=A(n)x(n)+f(n,x(n)),n∈Z,(*) where x(n)∈R~N,A(n)=(a_(ij)(n))N×N is an N×N matrix,with a-(ij)∈C(R,R) for i,j= 1,2,3,...,N,and f=(f_1,f_2,...,f_N)~T∈C(R×R~N,R~N),satisfying A(t+ω)=A(t),f(t+ω,z)=f(t,z) for any t∈R,(t,z)∈R×R~N andωis a positive integer.Sufficient conditions for the existence ofω-periodic solutions to equations (*) are obtained. 相似文献
56.
文章提出了大学研究性物理实验与创新心理品质培养的主题,介绍了大学研究性物理实验的特点,论述了大学研究性物理实验对大学生创新心理品质的影响。 相似文献
57.
A new type of THz waveguides, which employs a solid polyethylene rod as the core and polyethylene tubes in a periodic array of square lattice as the cladding, is proposed. Optical properties of this new THz waveguide, especially in dispersion, confinement loss and single mode property, are investigated in detail with the plane wave expansion method and the beam propagation method. Numerical results demonstrate that the new THz waveguide can reach not only low dispersion but also low confinement loss at single mode propagation. Therefore, the square lattice structure is a better candidate as THz waveguides than the triangular ones. 相似文献
58.
Gauss periods give an exponentiation algorithm that is fast for many finite fields but slow for many other fields. The current paper presents a different method for construction of elements that yield a fast exponentiation algorithm for finite fields where the Gauss period method is slow or does not work. The basic idea is to use elements of low multiplicative order and search for primitive elements that are binomial or trinomial of these elements. Computational experiments indicate that such primitive elements exist, and it is shown that they can be exponentiated fast. 相似文献
59.
Buttari D. Chini A. Meneghesso G. Zanoni E. Moran B. Heikman S. Zhang N.Q. Shen L. Coffie R. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2002,23(2):76-78
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs 相似文献
60.
Liang Y.C. Wenjiang Zeng Pick Hong Ong Zhaoxia Gao Jun Cai Balasubramanian N. 《Electron Device Letters, IEEE》2002,23(12):700-703
In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology. 相似文献