负离子元素杂质破坏模型

探讨了HfO₂薄膜中负离子元素杂质破坏模型，并得出薄膜中的杂质主要来源于 镀膜材料. 用电子束蒸发方法沉积两种不同Cl元素含量的HfO₂薄膜，测定薄膜 弱吸收和损伤阈值来验证负离子元素破坏模型. 结果表明，随着Cl元素含量的增加薄膜的弱 吸收增加损伤阈值减小. 这主要是因为负离子元素在蒸发过程中形成挥发性的气源中心而产 生缺陷，缺陷在激光辐照过程中又形成吸收中心. 因此负离子元素的存在将加速薄膜的破坏 . 关键词： 负离子元素杂质 缺陷 吸收     

High-T/sub 0/ strain-compensated InGaAsSb-AlGaAsSb quantum-well lasers emitting at 2.43 /spl mu/m

Strain-compensated InGaAsSb-AlGaAsSb quantum-well (QW) lasers emitting near 2.5 /spl mu/m have been grown by solid-source molecular beam epitaxy. The relatively high arsenic composition causing a tensile strain in the Al/sub 0.25/GaAs/sub 0.08/Sb barriers lowers the valence band edge and the hole energy level, leading to an increased hole confinement and improved laser performance. A 60% external differential efficiency in pulsed mode was achieved for 1000-/spl mu/m-long lasers emitting at 2.43 /spl mu/m. A characteristic temperature T/sub 0/ as high as 163 K and a lasing-wavelength temperature dependence of 1.02 nm//spl deg/C were obtained at room temperature. For 2000 /spl times/ 200 /spl mu/m/sup 2/ broad-area three-QW lasers without lateral current confinement, a low pulsed threshold of 275 A/cm/sup 2/ was measured.     

Synthesis of 5‐Radioiodoarabinosyl Uridine Analog for Probing the HSV‐1 Thymidine Kinase Gene

Tumor cells transduced with herpes simplex virus thymidine kinase gene have been intensively applied to the field of positron emission tomography via imaging of its substrate. As a pilot synthesis approach, a facile preparation of 5‐[¹²⁵I] iodoarabinosyl uridine starting from commercially available uridine is reported herein.     

Hydroxyapatite coating on porous silicon substrate obtained by precipitation process

Hydroxyapatite Ca₁₀(PO₄)₆(OH)₂ (HAP) is known as a bioactive and biocompatible material, HAP coatings were used to improve the biocompatible of substrate by many researcher, In this work, HAP thin films on porous silicon (PS) substrates have been prepared by aqueous precipitation method with rapid thermal annealing (RTA) processes. The HAP films had been prepared under the annealing temperature ranging from 300 to 1000 °C. By the measurement of X-ray diffraction (XRD), it was found that for the crystallinity optimization, the heat-treatment at 850–950 °C for 1 h would be favorable. Atomic force microscopy (AFM) and scanning electron microscope (SEM) measurements reveal a dense and smooth surface of the HAP film, and tightly adherence of the coating on porous silicon substrate after sintered. Thus, by this method, porous silicon could be increased its bioactivity and so that could be used in the biomedical area.     

高功率二极管泵浦固体激光技术和应用前景的分析

文章对高功率二极管泵浦固体激光器的若干关键技术，包括激光二极管和增益介质，泵浦，耦合和冷却技术，以及光学谐振腔等作了详细的分析。     

电荷量子比特与量子化光场之间的纠缠

研究了初态为混合态的电荷量子比特与量子化光场之间的纠缠.通过求解系统的concurrence下限, 研究初态的混合度λ和失谐量Δ对系统纠缠随时间演化的影响. 在弱场中, 电荷量子比特初始是激发态的系统, 其纠缠度远远大于电荷量子比特初始是基态的系统, 并且Δ对系统的纠缠有明显的抑制作用. 在强场中, 电荷量子比特初始分别为激发态和基态时系统的纠缠演化接近一致, 初态混合度最高时系统的纠缠度最小, 并且Δ对系统纠缠的影响变弱. 关键词： 约瑟夫森结 纠缠 混合态 concurrence下限     

Rational Homotopy Theory and Nonnegative Curvature

in this note, we answer positively a question by Belegradek and Kapovitch about the relation between rational homotopy theory and a problem in Riemannian geometry which asks that total spaces of which vector bundles over compact non-negative curved manifolds admit （complete） metrics with non-negative curvature.     

双面肖特基势垒型GaAs粒子探测器的电特性研究

研究了有源面积为９ｍｍ２的双面肖特基势垒ＧａＡｓ粒子探测器的电特性。器件工艺简单，结构新颖，反向耐压高于３００Ｖ，反向漏电流密度低（９１ｎＡ／ｍｍ２），该器件能经受能量为１．５ＭｅＶ、剂量为１０００ｋＧｙ的电子照射，电特性正常，是一种抗辐照的粒子探测器。     

Information analysis of single photon emission computed tomography with count losses

An analysis is presented of the information transfer from emitter-space to detector-space in single photon emission computed tomography (SPECT) systems. The analysis takes into account the fact that count loss side information is generally not available at the detector. Side information corresponds to the number gamma-rays lost deleted due to lack of interaction with the detector data. It is shown that the information transfer depends on the structure of the likelihood function of the emitter locations associated with the detector data. This likelihood function is the average of a set of ideal-detection likelihood functions, each matched to a particular set of possible deleted gamma-ray paths. A lower bound is derived for the information gain due to incorporating the count loss side information at the detector. This is shown to be significant when the mean emission rate is small or when the gamma-ray deletion probability is strongly dependent on emitter location. Numerical evaluations of the mutual information, with and without side information, associated with information-optimal apertures and uniform parallel-hole collimators are presented.     

On N-widths in Ip

In this paper we prove that (1<p<+∞), give the characteristics of x^o and the optimal subspace for n-width d_n in space X=l _n ^N . Where d_n in the n-width, in the sense of Kolmogorov, ofD in X, dⁿ is the n-width ofD with respect to X, in the sense of Gel'fand, δ is the linear n-width ofD with respect to X.