Floating-patch MEMS antennas on HRS substrate for millimetre-wave applications

Novel floating-patch micro-electro-mechanical system (MEMS) antennas are proposed for millimetre-wave applications. The floating-patch MEMS antennas are fabricated on a high resistivity silicon (HRS) substrate using surface micromachining technology. Simulation and experimental results for reflection coefficients and radiation patterns are presented.     

Investigation of the Li1+xV3O8 electrode–organic electrolyte interface by scanning photoelectron microscopy

To investigate the formation of a solid electrolyte interface (SEI) on the Li_1+xV₃O₈ electrode surface in the thermodynamic stability range of the organic electrolyte, we applied scanning photoelectron microscopy (SPEM) to a pristine electrode and to an electrode after ten cycles. The F K-edge absorption spectrum of the cycled electrode showed that LiF forms on the electrode surface during the lithium insertion–extraction process in the Li_1+xV₃O₈/Li cell. The photoelectron spectrum for the cycled electrode showed intense spectral features corresponding to Li 1s, F 2s, F 2p, and P 2p electron signals, whereas these spectral features were of negligible intensity for the pristine electrode. The above results give strong support for the formation of an SEI that consists of LiF and compounds containing phosphorus during operation of the battery. The SPEM images also revealed that the fluorine distribution on the surface of the cycled electrode was inhomogeneous.     

Liminf results on the increments of an (N,d)-Gaussian process

We establish some liminf theorems on the increments of a (N,d)-Gaussian process with the usual Euclidean norm, via estimating upper bounds of large deviation probabilities on the suprema of the (N,d)-Gaussian process. This revised version was published online in June 2006 with corrections to the Cover Date.     

A transmit MIMO scheme with frequency domain pre-equalization for wireless frequency selective channels

In this paper, we introduce a transmit multiple-input multiple-output (MIMO) scheme with frequency domain pre-equalization for a multipath or frequency selective channel. In this scheme, MIMO processing in the frequency domain is performed at the transmitter or base station so that the receiver or mobile station only requires limited processing. This scheme provides high data rates and also inherits from the frequency domain equalization the property of relatively low complexity in severe multipath environments. The MIMO transmit processing is derived by minimizing the minimum mean square errors (MMSE), and expressions for the signal-to-interference-plus-noise ratio and error probability based on the Gaussian approximation of the interference term are provided. Some important associated issues, such as channel errors and computational complexity, are also investigated. Numerical simulations are also provided and these demonstrate the improved performance of our proposed scheme compared to other transmit MIMO schemes. In particular, they show that the proposed system can attain multipath or frequency diversity of the channel.     

Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs

Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibited a more significant V/sub t/ instability than that of PMOS negative BTI (NBTI), and limited the lifetime of HfO/sub 2/ MOSFETs. Although high-temperature forming gas annealing (HT-FGA) improved the interface quality by passivating the interfacial states with hydrogen, BTI behaviors were not strongly affected by the technique. Charge pumping measurements were extensively used to investigate the nature of the BTI degradation, and it was found that V/sub t/ degradation of NMOS PBTI was primarily caused by charge trapping in bulk HfO/sub 2/ rather than interfacial degradation. Deuterium (D/sub 2/) annealing was found to be an excellent technique to improve BTI immunity as well as to enhance the mobility of HfO/sub 2/ MOSFETs.     

Data retention characteristics of sub-100 nm NAND flash memory cells

In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells.     

Adaptive contour smoothing based on inter-region contrast

An adaptive contour smoothing algorithm designed as a preprocessor for shape coders is presented. In the method, the degree of the adaptive smoothing is controlled based on the significance of each contour point, which is quantified according to inter-region contrast in an intensity image. The actual smoothing consists of an expansion operator and a thinning algorithm.     

Transport of surface-modified iron nanoparticle in porous media and application to arsenic(III) remediation

The surface-modified iron nanoparticles (S-INP) were synthesized, characterized and tested for the remediation of arsenite (As(III)), a well known toxic groundwater contaminant of concern. The S-INP material was fully dispersed in the aqueous phase with a particle size distribution of 2–10 nm estimated from high-resolution transmission electron microscopy (HR-TEM). X-ray photoelectron spectroscopy (XPS) revealed that an Fe(III) oxide surface film was present on S-INP in addition to the bulk zero-valent Fe⁰ oxidation state. Transport of S-INP through porous media packed in 10 cm length column showed particle breakthroughs of 22.1, 47.4 and 60 pore volumes in glass beads, unbaked sand, and baked sand, respectively. Un-modified INP was immobile and aggregated on porous media surfaces in the column inlet area. Results using S-INP pretreated 10 cm sand-packed columns containing ∼2 g of S-INP showed that 100 % of As(III) was removed from influent solutions (flow rate 1.8 mL min⁻¹) containing 0.2, 0.5 and 1.0 mg L⁻¹ As(III) for 9, 7 and 4 days providing 23.3, 20.7 and 10.4 L of arsenic free water, respectively. In addition, it was found that 100% of As(III) in 0.5 mg/L solution (flow rate 1.8 mL min⁻¹) was removed by S-INP pretreated 50 cm sand packed column containing 12 g of S-INP for more than 2.5 months providing 194.4 L of arsenic free water. Field emission scanning electron microscopy (FE-SEM) showed S-INP had transformed to elongated, rod-like shaped corrosion product particles after reaction with As(III) in the presence of sand. These results suggest that S-INP has great potential to be used as a mobile, injectable reactive material for in-situ sandy groundwater aquifer treatment of As(III).     

640 × 512 pixel narrow-band, four-band, and broad-band quantum well infrared photodetector focal plane arrays

A 9 μm cutoff 640 × 512 pixel hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated with excellent imagery. A noise equivalent differential temperature (NEDT) of 10.6 mK is expected at a 65 K operating temperature with f/2 optics at a 300 K background. This focal plane array has shown background limited performance at a 72 K operating temperature with the same optics and background conditions. In this paper, we discuss the development of this very sensitive long-wavelength infrared camera based on a GaAs/AlGaAs QWIP focal plane array and its performance in quantum efficiency, NEDT, uniformity, and operability. In the second section of this paper, we discuss the first demonstration of a monolithic spatially separated four-band 640 × 512 pixel QWIP focal plane array and its performance. The four spectral bands cover 4–5.5, 8.5–10, 10–12, and 13.5–15 μm spectral regions with 640 × 128 pixels in each band. In the last section, we discuss the array performance of a 640 × 512 pixel broad-band (10–16 μm full-width at half-maximum) QWIP focal plane.     

Reduction of loading effect by tungsten etchback in a magneticallyenhanced reactive ion etcher

The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF ₆/Ar mixtures. It was found that while the plug loading effect is independent of varying SF₆/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology