A lightweight stateful address autoconfiguration for 6LoWPAN

Sensor networks have become increasingly important in various areas, and most current applications require connectivity between sensor networks and the Internet. By being seamlessly integrated into IP network infrastructure, sensor network applications would benefit from standardized and established technology, as well as from the plethora of readily available applications. Preparing sensor networks for IP communication and integrating them into the IP network, however, present new challenges on the architecture and its functional blocks, e.g., the adaptation of the respective link technology for IP support, development of security mechanisms, and autoconfiguration to support ad hoc deployment. In this paper, we focus on the IPv6 address autoconfiguration issue and propose a proxy-based autoconfiguration protocol. The proposed protocol guarantees the assignment of a unique address to each node in the network. The protocol is simulated and implemented on off-the-shelf sensor network platforms. The experiment results show that our mechanism outperforms similar network address configuring mechanisms in terms of latency and overhead.     

Resistive switching characteristics of solution-processed TiOx for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility

Solution-processed TiO_x layer was investigated as a candidate for next-generation resistive random access memory (ReRAM) application. TiO_x active layer was prepared by simple spin coating process of a titanium(IV) isopropoxide precursor using sol-gel chemistry. Through the introduction of indium-tin-oxide (ITO) coated glass and polyethersulfone (PES) substrates, tranparent and flexible ReRAM devices were demonstrated, respectively. In addition, using scalable via-hole structure with nano-scale active area, the feasibility for high-density memory application was investigated. All ReRAM devices formed using various substrates exhibited good memory performance, such as stable dc I-V, ac endurance, and retention characteristics during maintaining their own unique functions accomplished by substrate properties.     

Design study of a radio-frequency quadrupole for high-intensity beams

The Rare isotope Accelerator Of Newness(RAON) heavy-ion accelerator has been designed for the Rare Isotope Science Project(RISP) in Korea. The RAON will produce heavy-ion beams from 660-MeV-proton to200-MeV/u-uranium with continuous wave(CW) power of 400 k W to support research in various scientific fields.Its system consists of an ECR ion source, LEBTs with 10 ke V/u, CW RFQ accelerator with 81.25 MHz and 500 ke V/u, a MEBT system, and a SC linac. In detail, the driver linac system consists of a Quarter Wave Resonator(QWR) section with 81.25 MHz and a Half Wave Resonator(HWR) section with 162.5 MHz, Linac-1, and a Spoke Cavity section with 325 MHz, Linac-2. These linacs have been designed to optimize the beam parameters to meet the required design goals. At the same time, a light-heavy ion accelerator with high-intensity beam, such as proton,deuteron, and helium beams, is required for experiments. In this paper, we present the design study of the high intensity RFQ for a deuteron beam with energies from 30 ke V/u to 1.5 MeV/u and currents in the m A range. This system is composed of an Penning Ionization Gauge ion source, short LEBT with a RF deflector, and shared SC Linac. In order to increase acceleration efficiency in a short length with low cost, the 2nd harmonic of 162.5 MHz is applied as the operation frequency in the D~+RFQ design. The D~+RFQ is designed with 4.97 m, 1.52 bravery factor. Since it operates with 2nd harmonic frequency, the beam should be 50% of the duty factor while the cavity should be operated in CW mode, to protect the downstream linac system. We focus on avoiding emittance growth by the space-charge effect and optimizing the RFQ to achieve a high transmission and low emittance growth. Both the RFQ beam dynamics study and RFQ cavity design study for two and three dimensions will be discussed.     

Rovibrationally selected and resolved state-to-state photoionization of ethylene using the infrared-vacuum ultraviolet pulsed field ionization-photoelectron method

By preparing ethylene [C2H4(X1Ag)] in selected rotational levels of the nu11(b1u), nu2+nu12(b1u), or nu9(b2u) vibrational state with infrared (IR) laser photoexcitation prior to vacuum ultraviolet (VUV) laser photoionization, we have recorded rotationally resolved pulsed field ionization-photoelectron (PFI-PE) spectra for C2H4+(X2B3u) in the energy region of 0-3000 cm(-1) above the ionization energy (IE) of C2H4(X1Ag). Here, nu2(ag), nu9(b2u), nu11(b1u), and nu12(b1u) represent the C-C stretching, CH2 stretching, CH2 stretching, and CH2 bending modes of C2H4(X1Ag), respectively. The fully rovibrationally resolved spectra have allowed unambiguous symmetry assignments of the observed vibrational bands, which in turn have provided valuable information on the photoionization dynamics of C2H4. The IR-VUV photoionization of C2H4(X1Ag) via the nu11(b1u) or nu2+nu12(b1u) vibrational states is found to predominantly produce vibrational states of C2H4+(X2B3u) with b1u symmetry, which cannot be observed in single-photon VUV-PFI-PE measurements of C2H4(X1Ag). The analysis of the observed IR-VUV-PFI-PE bands has provided the IE(C2H4) = 84,790.2(2) cm(-1) and accurate vibrational frequencies for the nu4+(au)[84.1(2) cm(-1)], nu12+(b1u)[1411.7(2) cm(-1)], nu4+ +nu12+(b1g)[1482.5(2) cm(-1)], nu2+(ag)[1488.3(2) cm(-1)], nu2+ + nu4+(au)[1559.2(2) cm(-1)], 2nu4+ + nu12 +(b1u)[1848.5(2) cm(-1)], 4nu4+ + nu12 +(b1u)[2558.8(2) cm(-1)], nu2+ + nu12 +(b1u)[2872.7(2) cm(-1)], and nu11+(b1u)[2978.7(2) cm(-1)] vibrational states of C2H4+(X2B3u), where nu4+ is the ion torsional state. The IE(C2H4) and the nu4+(au), nu2+(ag), and nu2+ + nu4+ (au) frequencies are in excellent accord with those obtained in previous single-photon VUV-PFI-PE measurements. The other ion vibrational frequencies represent new experimental determinations. We have also performed high-level ab initio anharmonic vibrational frequency calculations for C2H4(X1Ag) and C2H4+(X2B3u) at the CCSD(T)/aug-cc-pVQZ level for guidance in the assignment of the IR-VUV-PFI-PE spectra. All theoretical vibrational frequencies for the neutral and ion, except the ion torsional frequency, are found to agree with experimental vibrational frequencies to better than 1%.     

Spontaneous self-organization enables dielectrophoresis of small nanoparticles and formation of photoconductive microbridges

Detailed understanding of the mechanism of dielectrophoresis (DEP) and the drastic improvement of its efficiency for small size-quantized nanoparticles (NPs) open the door for the convergence of microscale and nanoscale technologies. It is hindered, however, by the severe reduction of DEP force in particles with volumes below a few hundred cubic nanometers. We report here DEP assembly of size-quantized CdTe nanoparticles (NPs) with a diameter of 4.2 nm under AC voltage of 4-10 V. Calculations of the nominal DEP force for these NPs indicate that it is several orders of magnitude smaller than the force of the Brownian motion destroying the assemblies even for the maximum applied AC voltage. Despite this, very efficient formation of NP bridges between electrodes separated by a gap of 2 μm was observed even for AC voltages of 6 V and highly diluted NP dispersions. The resolution of this conundrum was found in the intrinsic ability of CdTe NPs to self-assemble. The species being assembled by DEP are substantially bigger than the individual NPs. DEP assembly should be treated as a process taking place for NP chains with a length of ~140 nm. The self-assembled chains increase the nominal volume where the polarization of the particles takes place, while retaining the size-quantized nature of the material. The produced NP bridges were found to be photoactive, producing photocurrent upon illumination. DEP bridges of quantum confined NPs can be used in fast parallel manufacturing of novel MEMS components, sensors, and optical and optoelectronic devices. Purposeful engineering of self-assembling properties of NPs makes possible further facilitation of the DEP and increase of complexity of the produced nano- and microscale structures.     

Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels

We have investigated the passivation effects of high-pressure hydrogen annealing (HPHA) on silicon nanowire (Si NW) metal oxide semiconductor field effect transistors (MOSFETs) with multi-wire channels. Compared to the conventional forming gas annealing (FGA) process, the results show that HPHA can significantly improve device performance parameters such as threshold voltage, subthreshold slope, mobility, and I_ON/I_OFF ratio. This enhancement is attributed to the effective passivation of the interface traps between the SiO₂ and the Si NW channel. Therefore, HPHA can be a promising process for the implementation of the Si NW MOSFET.     

Reliable impurity trap memory with high charge trap efficiency using ultrathin SiO2 impurity host layer for nonvolatile memory application

We demonstrated reliable impurity trap memory (ITM) with high charge trap efficiency by incorporating only 1 nm-SiO₂ impurity host layer (IHL) between Al₂O₃ diffusion barrier layer and blocking oxide. While the ITM without IHL showed significant retention degradation as the amount of Ti impurity increased from 0.7 to 3 Å for enlarging memory window, the ITM with IHL showed stable retention characteristic which is charge loss less than 1 V after 10⁴ s at 85 °C. We postulated that the chemical reaction between Ti and SiO₂ induced three dimensionally-distributed impurity traps in IHL, which could result in the well-discrete stored charges in program mode.     

ML Approaching MIMO Detection Based on Orthogonal Projection

A detection algorithm for spatially multiplexed multiple input multiple output (MIMO) systems is proposed. The receiver first estimates the MIMO channel and rearranges the layers according to the measured SNRs. To determine the candidate vectors, an orthogonal projection combined with the M-algorithm is used. Without performing the exhaustive full search of the maximum likelihood (ML) method, the proposed algorithm can reach the performance which is closely akin to the ML method. The computational complexity markedly decreases: 0.66% over the ML method in terms of the number of real multiplications.     

Facile fabrication of 2-dimensional arrays of sub-10 nm single crystalline Si nanopillars using nanoparticle masks

A simple procedure for the fabrication of sub-10 nm scale Si nanopillars in a 2-D array using reactive ion etching with 8 nm Co nanoparticles as etch masks is demonstrated. The obtained Si nanopillars are single crystalline tapered pillar structures of 5 nm (top) x 8 nm (bottom) with a density of approximately 4 x 10(10) pillars cm(-2) on the substrate, similar to the density of Co nanoparticles distributed before the ion etching process. The uniform spatial distribution of the Si nanopillars can also be patterned into desired positions. Our fabrication method is straightforward and requires mild process conditions, which can be extended to patterned 2-D arrays of various Si nanostructures.     

A two-color infrared-vacuum ultraviolet laser pulsed field ionization photoelectron study of NH3

We have observed fully rotationally resolved transitions of the photoelectron vibrational bands 2(4), 2(5), 1(1)2(1), and 1(1)2(3) for ammonia cation (NH3+) by two-color infrared (IR)-vacuum ultraviolet (VUV)- pulsed field-ionization photoelectron (PFI-PE) measurements. By preparing an intermediate rovibrational state of neutral NH(3) with a known parity by IR excitation followed by VUV-PFI-PE measurements, we show that the photoelectron parity can be determined unambiguously. The IR-VUV-PFI-PE measurement of the 2(4) band clearly reveals the formation of both even and odd l states for the photoelectrons, where l is the orbital angular momentum quantum number. This observation is consistent with the conclusion that the lack of inversion symmetry for NH3 and NH3+ allows odd/even l mixings, rendering the production of both odd and even l states for the photoelectrons. Evidence is also found, indicating that the photoionization transitions with DeltaK=0 are strongly favored compared to that with DeltaK=3. For the 2(5), 1(1)2(1), and 1(1)2(3) bands, only DeltaK=0 transitions for the production of even l photoelectron states from the J'K'=2(0) rotational level of NH3(nu1=1) are observed. The preferential formation of even l photoelectron states for these vibrational bands is attributed to the fact that the DeltaK=0 transitions for the formation of odd l photoelectron states from the 2(0) rotational level of NH3(nu1=1) are suppressed by the constraint of nuclear-spin statistics. In addition to information obtained on the photoionization dynamics of NH3, this experiment also provides a more precise value of 3232+/-10 cm-1 for the nu1+ (N-H stretch) vibrational frequency of NH3+.