40 GHz Vertical Transition with a Dual‐Mode Cavity for a Low‐Temperature Co‐fired Ceramic Transceiver Module

A new vertical transition between a substrate integrated waveguide in a low‐temperature co‐fired ceramic substrate and an air‐filled standard waveguide is proposed in this paper. A rectangular cavity resonator with closely spaced metallic vias is designed to connect the substrate integrated waveguide to the standard air‐filled waveguide. Physical characteristics of an air‐filled WR‐22 to WR‐22 transition are compared with those of the proposed transition. Simulation and experiment demonstrate that the proposed transition shows a ?1.3 dB insertion loss and 6.2 GHz bandwidth with a 10 dB return loss for the back‐to‐back module. A 40 GHz low‐temperature co‐fired ceramic module with the proposed vertical transition is also implemented. The implemented module is very compact, measuring 57 mm × 28 mm × 3.3 mm.     

Metallic Nanowire Coupled CsPbBr3 Quantum Dots Plasmonic Nanolaser

Plasmonic nanolasers provide a valuable opportunity for expanding sub-wavelength applications. Due to the potential of on-chip integration, semiconductor nanowire (NW)-based plasmonic nanolasers that support the waveguide mode attract a high level of interest. To date, perovskite quantum dots (QDs) based plasmonic lasers, especially nanolasers that support plasmonic-waveguide mode, are still a challenge and remain unexplored. Here, metallic NW coupled CsPbBr₃ QDs plasmonic-waveguide lasers are reported. By embedding Ag NWs in QDs film, an evolution from amplified spontaneous emission with a full width at half maximum (FWHM) of 6.6 nm to localized surface plasmon resonance (LSPR) supported random lasing is observed. When the pump light is focused on a single Ag NW, a QD-NW coupled plasmonic-waveguide laser with a much narrower emission peak (FWHM = 0.4 nm) is realized on a single Ag NW with the uniform polyvinylpyrrolidone layer. The QDs serve as the gain medium while the Ag NW serves as a resonant cavity and propagating plasmonic lasing modes. Furthermore, by pumping two Ag NWs with different directions, a dual-wavelength lasing switch is realized. The demonstration of metallic NW coupled QDs plasmonic nanolaser would provide an alternative approach for ultrasmall light sources as well as fundamental studies of light matter interactions.     

A reliable overlay video transport protocol for multicast agents in wireless mesh networks

A new video transport protocol for multicast agents in wireless mesh networks (WMNs) is proposed in this paper. The proposed protocol enables a significant reduction in the transmission overhead, while providing reliable communication for its use in multicast applications. This proposed reliable protocol provides a practical approach for an overlay peer‐to‐peer multicast facility supported within the application layer. This obviates the need to give upgraded routers capable of handling multicast broadcasting or modify the existing protocol stack. The protocol tolerates partial losses in multimedia transmissions, while supporting control of the delay sensitivity of such transmissions in WMNs. The key issue in this protocol is the ability to detect packet loss, anticipate retransmission requests, and use the anticipated retransmission requests to transmit the lost packets prior to requests from other receiving agents. The proposed protocol allows for the receiver to determine if retransmission of lost packets is required, ensuring the greatest flexibility needed for a reliable multicast protocol. Copyright © 2009 John Wiley & Sons, Ltd.     

Characteristics of solderable electrically conductive adhesives (ECAs) for electronic packaging

This study investigated the effect of the viscosity of the ECAs using a low-melting-point alloy (LMPA) filler on its bonding characteristics. The curing behaviors of the ECAs were determined using Differential Scanning Calorimetry (DSC), and ECA temperature-dependant viscosity characteristics were observed using a torsional parallel rheometer. The wetting test was conducted to investigate the reduction capability of ECAs and the flow-coalescence-wetting behavior of the LMPAs in ECAs. Electrical and mechanical properties were determined and compared to those with commercial ECAs and eutectic tin/lead (Sn/Pb) solder. In the metallurgically interconnected Quad Flat Package (QFP) joint, a typical scallop-type Cu–Sn intermetallic compound (IMC) layer formed at the upper SnBi/Cu interface after curing process. On the other hand, a (Cu, Ni)₆Sn₅ IMC layer formed on the SnBi/ENIG interface. In addition, the fracture surface exhibited by cleavage fracture mode and the fracture was propagated along the Cu–Sn IMC/SnBi interface. The extremely low-level viscosity of ECAs had a significant influence on the flow-coalescence-wetting behavior of the LMPAs in ECAs and also on the interconnection properties. Stable interconnected assemblies showed good electrical and mechanical properties.     

A PIN diode controlled variable attenuator using a 0-dB branch-line coupler

We describe a simple PIN diode controlled variable attenuator that employs a 0-dB branch line directional coupler. The response of the attenuator was measured between 1.3 GHz and 2.6 GHz. At the center frequency, the attenuation monotonically varied from 0.7 dB to 23 dB with the control voltage, and the distributed branch-line coupler structure resulted in low input reflection. Our attenuator is easier to design, smaller in area than a double hybrid coupled attenuator, and has comparable or better reflection and attenuation performance characteristics.     

A printed OTFT-backplane for AMOLED display

An AMOLED panel driven by an OTFT-backplane is an attractive display because OTFTs and OLEDs use organic materials with unique characteristics such as low temperature and solution processing ability, and thus are able to implement the key features of future displays. In this study we applied some printing technologies to fabricate an OTFT-backplane for AMOLEDs. Screen printing combined with photolithography with Ag ink was used for the gate electrodes and scan bus lines and contact pads. Ag metal lines with a width of 20 μm and thickness of 60 nm and resistivity of 3.0 × 10^?5 Ω cm were achieved. Inkjet printing was applied to deposit TIPS-pentacene as an organic semiconductor. The OTFT-backplane using the Ag gate electrodes and TIPS-pentacene exhibited uniform performance over 17,500 pixels on a 7 in. panel. The mobility was 0.31 ± 0.05 cm²/V s with a deviation of 17%. The AMOLED panel successfully demonstrated its ability to display patterns.     

Double S-Shaped Polarization – Voltage Curve and Negative Capacitance from Al2O3-Hf0.5Zr0.5O2-Al2O3 Triple-Layer Structure

The negative capacitance (NC) effect, recently discovered in a fluorite-based ferroelectric thin film, has attracted great attention as a rescue to overcome the scaling limitations of the conventional memory and logic devices of highly integrated circuits. The NC effect manifesting an S-shaped polarization–voltage (P–V) curve is initially interpreted by a 1-dimensional Landau Ginzburg Devonshire (LGD) model. However, a series of recent studies have found that this effect can also be explained by the inhomogeneous stray field energy (ISE) model. In this study, by extending the ISE model in the ferroelectric (FE)-dielectric (DE) layered structure, an analytical model that considers the influence of the interfacial screening charge distribution is presented. This model showed that the NC effect in the FE-DE heterostructure can be manifested in various forms other than a single S-shaped P–V curve. In particular, a double S-shaped P–V curve is expected from the fully compensated anti-parallel domain structure, confirmed experimentally in the actual Al₂O₃/(Hf_0.5Zr_0.5)O₂/Al₂O₃ triple-layer structure. Furthermore, to reveal the origin of the double S-shaped P–V curve, a multidomain LGD model is presented. It is confirmed that this phenomenon is attributed to the evolution of inhomogeneous stray field energy.     

Sensitivity analysis of ion implanted silicon wafers after rapid thermal annealing

In this study, we have investigated sensitivities of the ion implanted silicon wafers processed by rapid thermal annealing (RTA), which can reveal the variation of sheet resistance as a function of annealing temperature as well as implantation parameters. All the wafers were sequentially implanted by the arsenic or phosphorous implantations at 40, 80, and 100 keV with the dose level of 10¹⁴ to 2 × 10¹⁶ ions/cm². Rapid thermal annealing was carried out for 10 s by the infrared irradiation at a temperature between 850 and 1150°C in the nitrogen ambient. The activated wafer was characterized by the measurements of the sheet resistance and its uniformity mapping. The values of sensitivities are determined from the curve fitting of the experimental data to the fitting equation of correlation between the sheet resistance and process variables. From the sensitivity values and the deviation of sheet resistance, the optimum process conditions minimizing the effects of straggle in process parameters are obtained. As a result, a strong dependence of the sensitivity on the process variables, especially annealing temperatures and dose levels is also found. From the sensitivity analysis of the 10 s RTA process, the optimum values for the implant dose and annealing temperature are found to be in the range of 10¹⁶ ions/cm² and 1050-1100°C, respectively. The sensitivity analysis of sheet resistance will provide valuable data for accurate activation process, offering a guideline for dose monitoring and calibration of ion implantation process.