Optimal tradeoffs for location-based routing in large-scale ad hoc networks

Existing location-based routing protocols are not versatile enough for a large-scale ad hoc environment to simultaneously meet all of the requirements of scalability, bandwidth efficiency, energy efficiency, and quality-of-service routing. To remedy this deficiency, we propose an optimal tradeoff approach that: 1) constructs a hybrid routing protocol by combining well-known location-update schemes (i.e., proactive location updates within nodes' local regions and a distributed location service), and 2) derives its optimal configuration, in terms of location-update thresholds (both distance and time-based), to minimize the overall routing overhead. We also build a route-discovery scheme based on an Internet-like architecture, i.e., first querying the location of a destination, then applying a series of local-region routing until finding a complete route by aggregating the thus-found partial routes. To find the optimal thresholds for the hybrid protocol, we derive the costs associated with both location updates and route discovery as a function of location-update thresholds, assuming a random mobility model and a general distribution for route request arrivals. The problem of minimizing the total cost is then cast into a distributed optimization problem. We first prove that the total cost is a convex function of the thresholds, and then derive the optimal thresholds. Finally, we show, via simulation, that our analysis results indeed capture the real behavior.     

A 0.6–2.7 GHz Semidynamic Frequency Divide-by-3 Utilizing Wideband RC Polyphase Filter in 0.18 $mu$m CMOS

A wideband complementary metal oxide semiconductor (CMOS) semidynamic frequency divide-by-3 covering more than two octave bandwidths is presented. The wideband operation without requiring a quadrature signal source is realized by employing a three-stage RC polyphase filter. The transfer function analysis on Type-II two- and three-stage polyphase filters is performed to provide analytic solutions of the peak phase error and peak attenuation. Implemented in 0.18 mum CMOS, the divide-by-3 operates over the input frequency range between 0.6 and 2.7 GHz while dissipating 15 mA from a 1.8 V supply.     

On the SEP of Cooperative Diversity with Opportunistic Relaying

We analyze the exact symbol error probability (SEP) of cooperative diversity with opportunistic amplify-and-forward (AF) relaying. The benefit of this opportunism to the SEP is assessed by comparing with maximal ratio combining of orthogonal multiple AF relay transmissions.     

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control).     

Effects of diamines and their fluorinated groups on the color lightness and preparation of organosoluble aromatic polyimides from 2,2‐bis[4‐(4‐amino‐2‐trifluoromethylphenoxy)phenyl]‐hexafluoropropane

To investigate the position and amount of the CF₃ group affecting the coloration of polyimides (PIs), we prepared 2,2‐bis[4‐(4‐amino‐2‐trifluoromethylphenoxy)phenyl]hexafluoropropane ( 2 ) with four CF₃ groups with 2‐chloro‐5‐nitrobenzotrifluoride and 2,2‐bis(4‐hydroxyphenol)hexafluoropropane. A series of soluble and light‐colored fluorinated PIs ( 5 ) were synthesized from 2 and various aromatic dianhydrides ( 3a – 3f ). 5a – 5f had inherent viscosities ranging from 0.80 to 1.19 dL/g and were soluble in amide polar solvents and even in less polar solvents. The glass‐transition temperatures of 5 were 221–265 °C, and the 10% weight‐loss temperatures were above 493 °C. Their films had cutoff wavelengths between 343 and 390 nm, b* values (a yellowness index) ranging from 5 to 41, dielectric constants of 2.68–3.01 (1 MHz), and moisture absorptions of 0.03–0.29 wt %. In a comparison of the PI series 6 – 8 based on 2,2‐bis[4‐(4‐aminophenoxy)phenyl]hexafluoropropane, 2,2‐bis[4‐(4‐amino‐2‐trifluoromethylphenoxy)phenyl]propane, and 2,2‐bis[4‐(4‐aminophenoxy)phenyl]propane, we found that the CF₃ group close to the imide group was more effective in lowering the color; this means that CF₃ of 5 , 7 , and 8f was more effective than that of 6c . The color intensity of the four PI series was lowered in the following order: 5 > 7 > 6 > 8 . The PI 5f , synthesized from diamine 2 and 4,4′‐hexafluoroisopropylidenediphthalic anhydride, had six CF₃ groups in a repeated segment, so it exhibited the lightest color among the four series. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 922–938, 2003     

Generation of highly stable amidate anion in anionic polymerization of 3‐(triethylsilyl)propyl isocyanate

To study living anionic polymerization, 3‐(triethylsilyl)propyl isocyanate (TEtSPI) monomer was synthesized by hydrosilylation of allylamine with triethylsilane and treatment of the resulting amine with triphosgene. The polymerization of TEtSPI was performed with sodium naphthalenide (Na‐Naph) as an initiator and in the absence and presence of sodium tetraphenylborate (NaBPh₄) as an additive in tetrahydrofuran (THF) at ?78 and at ?98 °C. A highly stabilized amidate anion for living polymerization of isocyanates was generated for the first time with the combined effect of the bulky substituent and the shielding action of the additive NaBPh₄, extending the living character at least up to 120 min at ?98 °C. Even the anion could exist at ?78 °C for 10 min. A block copolymer, poly(n‐hexyl isocyanate)‐b‐poly[(3‐triethylsilyl)propyl isocyanate]‐b‐poly(n‐hexyl isocyanate), was synthesized with quantitative yields and controlled molecular weights via living anionic polymerization in THF at ?78 °C for TEtSPI and ?98 °C for n‐hexyl isocyanate, respectively, with Na‐Naph with three times of NaBPh₄ as a common ion salt. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 933–940, 2004     

Intramolecular energy transferable (2,2‐diphenylvinyl)phenyl substituted poly(p‐phenylenevinylene) derivative with efficient photoluminescence and electroluminescence

A poly(p‐phenylenevinylene) (PPV) derivative containing a bulky (2,2‐diphenylvinyl)phenyl group in the side chain, EHDVP‐PPV, was synthesized by Gilch route. The reduced tolane‐bisbenzyl (TBB) defects, as well as the structure of the polymer, was confirmed by various spectroscopic methods. The intramolecular energy transfer from the (2,2‐diphenylvinyl)phenyl side group to the PPV backbone was studied by UV‐vis and photoluminescence (PL) of the obtained polymer and model compound. The polymer film showed maximum absorption and emission peaks at 454 and 546 nm, respectively, and high PL efficiency of 57%. A yellow electroluminescence (λ_max = 548 nm) was obtained with intensities of 6479 cd/m² when the light‐emitting diodes of ITO/PEDOT/EHDVP‐PPV/LiF/Al were fabricated. The maximum power efficiency of the devices was 0.729 lm/W with a turn‐on voltage of 3.6 V. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 5636–5646, 2004     

BMAP/G/1 queue with correlated arrivals of customers and disasters

We consider a single server queue with disasters where the arrivals of customers and disasters are correlated. When a disaster occurs, it removes all the customers in the system and there requires repair time for the system to be operated normally. The stationary queue length distribution at the embedded points and at an arbitrary time are presented.     

Room temperature characterization of Hg1-xCdxTe P-on-n heterostructure photodiodes

Measurements of 77K R_oA and 300K reverse bias dynamic impedance (R_dA) products at one volt reverse bias has been carried out to assess the degree of correlation of this figure of merit. Planar P-on-n heterostructures were grown on near lattice-matched CdZnTe substrates with Hg_1-xCd_xTe (0.20< x <0.30) by molecular beam epitaxy. These devices were passivated with CdTe and doped with indium and arsenic as n- and p-type dopants, respectively. Current-voltage characteristic of these devices exhibit thermally generated dark currents at small and modest reverse bias. We have observed that R_oA values of these long wavelength infrared P-on-n heterostructure photodiodes at 77K correlate with room temperature R_dA values. Diode arrays with high room temperature R_dA values at one volt reverse bias also have high R_oA values at 77K. Similarly, low R_dA values at room temperature indicate poor performance at 77K where deviation from diffusion current occurs at reverse bias of 0.2 to 1 volt at room temperature. The results presented here, for a small samples of devices, demonstrate that room temperature measurements of current-voltage characteristics to evaluate Hg_1-xCd_xTe (0.22< x <0.28) diode performance and array uniformity at lower temperatures can be used. This provides an acceptable criteria for further study at lower temperatures.