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101.
Seung-Hwan Seo Se-Woon Kim Jang-Uk Lee Gu-Cheol Kang Kang-Seob Roh Kwan-Young Kim Soon-Young Lee Chang-Min Choi Kwan-Jae Song So-Ra Park Jun-Hyun Park Ki-Chan Jeon Dong Myong Kim Dae Hwan Kim Hyungcheol Shin Jong Duk Lee Byung-Gook Park 《Solid-state electronics》2008,52(6):844-848
The channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories is investigated. While the trapped charge profile-dependent overerasure is observed in 10-μm-wide device, it is suppressed in 0.22-μm-wide device. Both the overerasure suppression and gradual positive threshold voltage shift in narrow device are explained as an elevated hot hole injection efficiency followed by more pronounced redistribution of the hole profile in the channel-center and the suppression of the lateral migration of injected holes in the channel-edge, by combining the measured endurance characteristics and TCAD simulation results. Main physical mechanisms are three-dimensional distribution of the electric field by gate/drain voltage, increasing interface states, and their trapped charge with cycling in the channel-edge. 相似文献
102.
The reservoir effect on electromigration reliability is analyzed using the normalized vacancy concentration distribution in the reservoir region of multi-level Al–0.5%Cu interconnect structure. With the assumption of steady state for the vacancy concentration and the fact that no current flow conducts in the reservoir region during electromigration test, a simple equation for calculation of the vacancy concentration is induced. Then direct calculation of the equation is carried out utilizing the hydrostatic stress distribution computed from finite element method to estimate the probability of initial void formation in the reservoir region. Finally, three multi-level Al–0.5%Cu interconnect structures with different reservoir lengths are constructed and electromigration lifetime for the structures is measured to clarify these computational results. From the results of this study, we conclude that the normalized vacancy concentration under the assumption of steady state can be regarded as a quantitative parameter to analyze the reservoir effect on electromigration reliability. 相似文献
103.
Influence of interfacial reaction layer on reliability of chip-scale package joint from using Sn-37Pb and Sn-8Zn-3Bi solder 总被引:1,自引:0,他引:1
Chung-Hee Yu Kyung-Seob Kim Hyung-Il Kim Hyo-Joeng Jeon 《Journal of Electronic Materials》2005,34(2):161-167
The microstructure of Sn-37Pb and Sn-8Zn-3Bi solders and the full strength of these solders with an Au/Ni/Cu pad under isothermal
aging conditions were investigated. The full strengths tended to decrease as the aging temperature and time increased, regardless
of the properties of the solders. The Sn-8Zn-3Bi had higher full strength than Sn-37Pb. In the Sn-37Pb solder, Ni3Sn4 compounds and irregular-shaped Pb-rich phase were embedded in a β-Sn matrix. The Ni3Sn4 compounds were observed at the interface between the solder and pad. The microstructure of the as-reflowed Sn-8Zn-3Bi solder
mainly consists of the β-Sn matrix scattered with Zn-rich phase. Zinc first reacted with Au and then was transformed to the
AuZn compound. With aging, Ni5Zn21 compounds were formed at the Ni layer. Finally, a Ni5Zn21 phase, divided into three layers, was formed with column-shaped grains, and the thicknesses of the layers were changed. 相似文献
104.
105.
Jeon IeR Ababei R Lecren L Li YG Wernsdorfer W Roubeau O Mathonière C Clérac R 《Dalton transactions (Cambridge, England : 2003)》2010,39(20):4744-4746
In an attempt to develop novel coordination networks of SMMs, a Cu(II) picolinate complex has been used to coordinate S(T) = 9 tetranuclear Mn-based SMMs resulting in an intriguing 2D framework exhibiting a magnet-like behavior at low temperature. 相似文献
106.
Hyung-Geun Moon You-Sun Kim Jun-Pyo Choi Dong-Sic Choi Chang Min Yoon Seong Gyu Jeon Yong Song Gho Yoon-Keun Kim 《Experimental & molecular medicine》2010,42(1):47-60
Theophylline is commonly used to treat severe asthma and chronic obstructive pulmonary disease (COPD) characterized by non-eosinophilic inflammation. Acetyl salicylic acid (ASA) is one of the most widely used medications worldwide, but up to 20% of patients with asthma experience aggravated respiratory symptoms after taking ASA. Here we evaluated the adverse effect of ASA on the therapeutic effect of theophylline in mice with non-eosinophilic asthma. A non-eosinophilic asthma mouse model was induced by airway sensitization with lipopolysaccharide-containing allergen and then challenged with allergen alone. Therapeutic intervention was performed during allergen challenge. Theophylline inhibited lung inflammation partly induced by Th1 immune response. ASA attenuated the beneficial effects of theophylline. However, co-administration of the ASA metabolite salicylic acid (SA) showed no attenuating effect on theophylline treatment. The therapeutic effect of theophylline was associated with increase in cAMP levels, which was blocked by co-treatment of theophylline and ASA. ASA co-treatment also attenuated the anti-inflammatory effects of a specific phosphodiesterase 4 inhibitor. These results demonstrate that ASA reverses anti-inflammatory effects of theophylline, and that ASA exerts its adverse effects through the inhibition of cAMP production. Our data suggest that ASA reverses lung inflammation in patients taking theophylline, although clinical evidence will be needed. 相似文献
107.
Kyungyea Park Deok‐Kyou Lee Byung‐Sung Kim Haseok Jeon Nae‐Eung Lee Dongmok Whang Hoo‐Jeong Lee Youn Jea Kim Jong‐Hyun Ahn 《Advanced functional materials》2010,20(20):3577-3582
Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures including high temperature annealing, the oxide semiconductor‐based TFT arrays can be transferred directly to plastic or rubber substrates, without an additional device process, using transfer printing methods. This procedure can avoid some of the thermal degradation problems associated with plastic or rubber substrates by separating them from the annealing procedure needed to improve the device performance. These design and fabrication methods offer the possibility of developing a new format of stretchable electronics. 相似文献
108.
109.
Myung Lee Rui Zhang Chunhui Zhu Tae Rim Park Chang-Sub Shin Young-Ae Jeon Seong-Hee Lee Sang-Sung Choi Yong Liu Sung-Woo Park 《Communications Magazine, IEEE》2010,48(1):54-61
This article presents an overview of the IEEE project 802.15.5 that targets providing mesh capabilities to both high-rate and low-rate wireless personal area networks. Low-rate mesh is built on IEEE 802.15.4 MAC, while high-rate mesh utilizes IEEE 802.15.3 MAC. We seek to share our insights and motivations of the approach adopted in the major components of the standard instead of presenting a la carte items drawn in the specification. We hope this article helps readers of the 802.15.5 standard to better understand the rationale and intent of the protocol design. 相似文献
110.