Elevation of the glass transition temperature in flexible‐chain semicrystalline polymers

In the idealized two‐phase model of a semicrystalline polymer, the amorphous intercrystalline layers are considered to have the same properties as the fully‐amorphous polymer. In reality, these thin intercrystalline layers can be substantially influenced by the presence of the crystals, as individual polymer molecules traverse both crystalline and amorphous phases. In polymers with rigid backbone units, such as poly(etheretherketone), PEEK, previous work has shown this coupling to be particularly severe; the glass transition temperature (T_g) can be elevated by tens of degrees celsius, with the magnitude of the elevation correlating directly with the thinness of the amorphous layer. However, this connection has not been explored for flexible‐chain polymers, such as those formed from vinyl‐type monomers. Here, we examine T_g in both isotactic polystyrene (iPS) and syndiotactic polystyrene (sPS), crystallized under conditions that produce a range of amorphous layer thicknesses. T_g is indeed shown to be elevated relative to fully‐amorphous iPS and sPS, by an amount that correlates with the thinness of the amorphous layer; the magnitude of the effect is severalfold less than that in PEEK, consistent with the minimum lengths of polymer chain required to make a fold in the different cases. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 1198–1204, 2007     

A One‐Kilobit PQR‐CMOS Smart Pixel Array

The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and √T‐dependent thermal red shifts. We observed uniform bottom emissions from a 1‐kb smart pixel chip of a 32×32 InGaAs PQR laser array flip‐chip bonded to a 0.35 µm CMOS‐based PQR laser driver. The PQR‐CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

Computational Implementation of Asymmetric Integral Imaging by Use of Two Crossed Lenticular Sheets

We propose an asymmetric integral imaging method to adjust the resolution and depth of a three‐dimensional image. Our method is obtained by use of two lenticular sheets with different pitches fabricated under the same F/#. The asymmetric integral imaging is the generalized version of integral imaging, including both conventional integral imaging and one‐dimensional integral imaging. We present experimental results to test and verify the performance of our method computationally.     

A Silicon–Silica Nanocomposite Material

The synthesis and characterization of a novel silicon–silica nanocomposite material are reported. A self‐assembly method allows the encapsulation of silicon nanoclusters within the channels of a periodic mesoporous silica thin film. The result is the formation of a silicon–silica nanocomposite film with bright, room‐temperature photoluminescence in the visible range, and a nanosecond luminescence lifetime. The properties of the nanocomposite material have been studied by several analytical techniques, which collectively show the existence within the channels of non‐diamondoid‐structure‐type silicon nanoclusters with various hydrogenated silicon sites. It is estimated that the silicon nanoclusters in the silica mesoporous films occupy up to 39 % of the accessible pore volume. The nanocomposite film shows improved resistance to air oxidation compared to crystalline silicon. The high loading and chemical stability to oxidation under ambient conditions are important advantages in terms of the development of silicon‐based light‐emitting diodes from this class of materials.     

Pseudorandomness of Basic Structures in the Block Cipher KASUMI

The notion of pseudorandomness is the theoretical foundation on which to consider the soundness of a basic structure used in some block ciphers. We examine the pseudorandomness of the block cipher KASUMI, which will be used in the next‐generation cellular phones. First, we prove that the four‐round unbalanced MISTY‐type transformation is pseudorandom in order to illustrate the pseudorandomness of the inside round function FI of KASUMI under an adaptive distinguisher model. Second, we show that the three‐round KASUMI‐like structure is not pseudorandom but the four‐round KASUMI‐like structure is pseudorandom under a non‐adaptive distinguisher model.     

Near‐Infrared Light‐Emitting Diodes (LEDs) Based on Poly(phenylene)/Yb‐tris(β‐Diketonate) Complexes

Near‐infrared‐emitting electroluminescent (EL) devices using blue‐light‐emitting polymers blended with the Yb complexes Yb(DBM)₃phen (DBM = dibenzoylmethane), Yb(DNM)₃phen (DNM = dinaphthoylmethane), and Yb(TPP)L(OEt) (L(OEt) = [(C₅H₅)Co{P(O)Et₂}₃]^–) have been studied. EL devices composed of Yb(DNM)₃phen blended with PPP‐OR11 showed enhanced near‐IR output at 977 nm when compared to those fabricated with Yb(DBM)₃phen/PPP‐OR11 blends. The maximum near‐IR external efficiencies of the devices with Yb(DBM)₃phen and Yb(DNM)₃phen are, respectively, 7 × 10^–5 (at 6 V and at 0.81 mA mm^–2) and 4 × 10^–4 (at 7 V, and 0.74 mA mm^–2). The optimal blend composition for EL device performance consisted of PPP‐OR11 blended with 10–20 mol‐% Yb(DNM)₃phen. A device fabricated using Yb‐(TPP)L(OEt)/PPP‐OR11 showed significantly enhanced near‐IR output efficiency, and future efforts will focus on devices fabricated using porphyrin‐based materials.     

High‐Tg Carbazole Derivatives as Blue‐Emitting Hole‐Transporting Materials for Electroluminescent Devices

A series of dicarbazolyl derivatives bridged by various aromatic spacers and decorated with peripheral diarylamines were synthesized using Ullmann and Pd‐catalyzed C–N coupling procedures. These derivatives emit blue light in solution. In general, they possess high glass‐transition temperatures (T_g > 125 °C) which vary with the bridging segment and methyl substitution on the peripheral amine. Double‐layer organic light‐emitting devices were successfully fabricated using these molecules as hole‐transporting and emitting materials. Devices of the configuration ITO/HTL/TPBI/Mg:Ag (ITO: indium tin oxide; HTL: hole‐transporting layer; TPBI: 1,3,5‐tris(N‐phenylbenzimidazol‐2‐yl)benzene) display blue emission from the HTL layer. The EL spectra of these devices appear slightly distorted due to the exciplex formation at the interfaces. However, for the devices of the configuration ITO/HTL/Alq₃/Mg:Ag (Alq₃ = tris(8‐hydroxyquinoline)aluminum) a bright green light from the Alq₃ layer was observed. This clearly demonstrates the facile hole‐transporting property of the materials described here.     

Error Concealment Based on Semantic Prioritization with Hardware‐Based Face Tracking

With video compression standards such as MPEG‐4, a transmission error happens in a video‐packet basis, rather than in a macroblock basis. In this context, we propose a semantic error prioritization method that determines the size of a video packet based on the importance of its contents. A video packet length is made to be short for an important area such as a facial area in order to reduce the possibility of error accumulation. To facilitate the semantic error prioritization, an efficient hardware algorithm for face tracking is proposed. The increase of hardware complexity is minimal because a motion estimation engine is efficiently re‐used for face tracking. Experimental results demonstrate that the facial area is well protected with the proposed scheme.     

Relating the Morphology of Poly(p‐phenylene vinylene)/Methanofullerene Blends to Solar‐Cell Performance

The performance of bulk‐heterojunction solar cells based on a phase‐separated mixture of donor and acceptor materials is known to be critically dependent on the morphology of the active layer. Here we use a combination of techniques to resolve the morphology of spin cast films of poly(p‐phenylene vinylene)/methanofullerene blends in three dimensions on a nanometer scale and relate the results to the performance of the corresponding solar cells. Atomic force microscopy (AFM), transmission electron microscopy (TEM), and depth profiling using dynamic time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) clearly show that for the two materials used in this study, 1‐(3‐methoxycarbonyl)propyl‐1‐phenyl‐[6,6]‐methanofullerene (PCBM) and poly[2‐methoxy‐5‐(3′,7′‐dimethyloctyloxy)‐1,4‐phenylene vinylene] (MDMO‐PPV), phase separation is not observed up to 50 wt.‐% PCBM. Nanoscale phase separation throughout the film sets in for concentrations of more than 67 wt.‐% PCBM, to give domains of rather pure PCBM in a homogenous matrix of 50:50 wt.‐% MDMO‐PPV/PCBM. Electrical characterization, under illumination and in the dark, of the corresponding photovoltaic devices revealed a strong increase of power conversion efficiency when the phase‐separated network develops, with a sharp increase of the photocurrent and fill factor between 50 and 67 wt.‐% PCBM. As the phase separation sets in, enhanced electron transport and a reduction of bimolecular charge recombination provide the conditions for improved performance. The results are interpreted in terms of a model that proposes a hierarchical build up of two cooperative interpenetrating networks at different length scales.