测量光纤外腔Fabry-Perot干涉仪的白光干涉术

提出了一种基于白光干涉术测量低锐度光纤外腔Fabry Perot干涉仪（EFPI）的方法用宽带光源注入F P腔,在接收端用一高锐度的可调谐光纤F P滤波器对EFPI的反射光谱进行扫描,获得了周期性变化的光谱输出为了测量出EFPI的腔长,对光谱信号进行傅里叶变换,得到光谱的周期,由此求出EFPI的绝对腔长证明了用低锐度EFPI的测量准确度由腔长决定F P腔越长,测量准确度越高在腔长分别是200 μm,400 μm和600 μm时,测量的腔长与实际腔长相同.     

光纤光栅腐蚀传感器

提出了一种测量钢筋腐蚀的新型传感器.这种传感器将光纤光栅拉伸后固定在圆形钢筋的表面,在钢筋被腐蚀后,光纤光栅所受到的拉伸应变将被释放,光纤光栅的反射光波长发生变化,通过测量光纤光栅的波长就可以测得钢筋腐蚀程度.这种传感器测量准确度优于±0.1 μm,测量范围约12 μm,可用于混凝土结构中钢筋腐蚀的早期监测.     

周期性梯度折射率多层膜的软X射线反射率

由于界面互扩散的存在,实际的超薄多层膜很难具有清晰的界面结构.假设超薄多层膜为具有周期性梯度折射率的多层膜结构,用直线模型和余弦模型模拟了周期性梯度折射率多层膜的软X射线反射率.结果证明,折射率余弦渐变的多层膜虽然不具有清晰的界面,但它同样具有很高的反射率.     

Effects of guanidinium cations on structural,optoelectronic and photovoltaic properties of perovskites

Guanidinium (GA) cations are intentionally introduced in MAPbl3 perovskite by considering its potential capability of stabilizing the material through plenty of...     

Bioactive PKS–NRPS Alkaloids from the Plant-Derived Endophytic Fungus Xylaria arbuscula

A novel hybrid PKS–NRPS alkaloid, xylarialoid A (1), containing a 13-membered macrocyclic moiety and [5,5,6] fused tricarbocyclic rings, together with ten known cytochalasins (2–11), was isolated from a plant-derived endophytic fungus, Xylaria arbuscula. The chemical structures of all compounds were elucidated using 1D and 2D NMR, HR ESIMS spectroscopic analyses, and electronic circular dichroism (ECD) calculation. Compounds 1–3 and 10 exhibited significant antitumor activities against A549 and Hep G2 cell lines, with IC₅₀ values of 3.6–19.6 μM. In addition, compound 1 showed potent anti-inflammatory activity against LPS-induced nitric oxide (NO) production in macrophage RAW 264.7 cells (IC₅₀, 6.6 μM).     

微孔配位聚合物作为新型储氢材料的研究

微孔配位聚合物性质独特、结构多样,具有广泛的应用前景,它已成为近几年来一个热门的研究领域。本文简要介绍该类化合物作为一种新型的储氢材料,在合成、结构和储氢性能方面的研究进展。     

An Improved Upper Bound on the Linear 2-arboricity of 1-planar Graphs

The linear 2-arboricity la_2(G) of a graph G is the least integer k such that G can be partitioned into k edge-disjoint forests,whose component trees are paths of length at most 2.In this paper,we prove that if G is a 1-planar graph with maximum degree Δ,then la_2(G)≤[(Δ+1)/2]+7.This improves a known result of Liu et al.(2019) that every 1-planar graph G has la_2(G)≤[(Δ+1)/2]+14.We also observe that there exists a 7-regular 1-planar graph G such that la_2(G)=6=[(Δ+1)/2]+2,which implies that our solution is within 6 from optimal.     

一种新型毫米波微带均衡器的设计与实现

分析了平面回音壁模介质谐振器的特点及其与微带线耦合产生均衡的原理,并在此基础上给出了一种新型的毫米波均衡器子结构.仿真分析证明,这种结构具有良好的Q值和耦合度可调性.最后,用此子结构级联设计出新型毫米波均衡器,并且呈现良好的特性.     

透射式固态电光扫描器设计

针对红外成像系统常用光机扫描器的不足,提出了没有机械运动部件的全固态电光扫描器设计方法,给出了几种透射式固态电光扫描器结构,主要包括扫描列阵、耦合波导和控制电路三个部分.工作原理是：通过控制电路顺序控制各扫描单元光信号的传输,再通过耦合波导将光信号耦合到探测器上实现扫描成像.扫描列阵将完整图像分割成图像单元,耦合波导将空间位置不同的图像单元耦合到红外焦平面探测器上,控制电路用来控制扫描列阵各图像单元的工作状态.这种扫描器体积小、重量轻、结构紧凑,采用与红外焦平面探测器制作工艺相似的半导体制作工艺,具有与探测器集成的技术基础,控制起来更加方便.     

温度对α-Al2O3(0001)表面吸附生长ZnO影响的DFT研究

The adsorption and the growth of ZnO on α-Al2O3(0001) surface at various temperatures were theoretically calculated by using a plane wave pseudopotentials (USP) method based on density functional theory.The average adsorption energy of ZnO at 400, 600 and 800 ℃ is 4.16±0.08, 4.25±0.11 and 4.05±0.23 eV respectively. Temperature has a remarkable effect on the structure of the surface and the interface of ZnO/α-Al2O3(0001). It is found that the Zn-hexagonal symmetry deflexion does not appear during the adsorption growth of ZnO at 400 ℃, and that the ZnO10-10 is parallel with the 10-10 of the α-Al2O3(0001), which is favorable for forming ZnO film with the Zn-terminated surface. It is observed from simulation that there are two kinds of surface structures in the adsorption of ZnO at 600 ℃: one is the ZnO surface that has the Zn-terminated structure, and whose 10-10 parallels the 10-10 of the substrate surface, and the other is the ZnO10-10 //sapphire 11-10 with the O-terminated surface. The energy barrier of the phase transition between these two different surface structures is about 1.6 eV, and the latter is more stable. Therefore,the suitable temperature for the thin film growth of ZnO on sapphire is about 600 ℃, and it facilitates the formation of wurtzite structure containing Zn-O-Zn-O-Zn-O double-layers as a growth unit-cell. At 600 ℃, the average bond length of Zn-O is 0.190±0.01 nm, and the ELF value indicates that the bond of (substrate)-O-Zn-O has a distinct covalent character, whereas the (Zn)O-Al (substrate) shows a clear character of ionic bond. However, at a temperature of 800 ℃, the dissociation of Al and O atoms on the surface of the α-Al2O3(0001) leads to a disordered surface and interface structure. Thus, the Zn-hexagonal symmetry structure of the ZnO film is not observed under this condition