Photoswitching of holographic polymer-dispersed liquid crystals doped with chiral dopant

Chiral dopants were added to the formulation of holographic polymer-dispersed liquid crystals and the effects studied in terms of grating formation dynamics, morphology, diffraction efficiency, contrast ratio and electro-optical properties of the films. A gradual increase of real-time diffraction efficiency, decrease of droplet size and increase of diffraction efficiency of the composite film were obtained with the addition and increasing content of chiral dopant, due to the increased viscosity of the liquid crystal (LC) doped with the chiral dopant leading to decreased droplet coalescence. The contrast ratio decreased with increasing content of chiral dopant due to the difficult orientation of LC molecules caused by the formation of a helical structure. Addition of a small amount of the chiral dopant increased the driving voltage slightly, whereas the decay time is decreased significantly as a result of the high twisting of the helical structure.     

Temperature effect on deposition rate of silicon nitride films

Temperature effects on deposition rate of silicon nitride films were characterized by building a neural network prediction model. The silicon nitride films were deposited by using a plasma enhanced chemical vapor deposition system and process parameter effects were systematically characterized by 2⁶⁻¹ fractional factorial experiment. The process parameters involved include a radio frequency power, pressure, temperature, SiH₄, N₂, and NH₃ flow rates. The prediction performance of generalized regression neural network was drastically improved by optimizing multi-valued training factors using a genetic algorithm. Several 3D plots were generated to investigate parameter effects at various temperatures. Predicted variations were experimentally validated. The temperature effect on the deposition rate was a complex function of parameters but N₂ flow rate. Larger decreases in the deposition rate with the temperature were only noticed at lower SiH₄ (or higher NH₃) flow rates. Typical effects of SiH₄ or NH₃ flow rate were only observed at higher or lower temperatures. A comparison with the refractive index model facilitated a selective choice of either SiH₄ or NH₃ for process optimization.     

An efficient construction of period-2 bulbs in the cubic Mandelbrot set with parametric boundaries

A parametric boundary equation is established for the principal period-2 bulb in the cubic Mandelbrot set. Using its geometry, an efficient escape-time algorithm which reduces the construction time for the period-2 bulbs in the cubic Mandelbrot set is introduced and the implementation graphic results display the fascinating fractal beauty     

Locating and counting bifurcation points of satellite components from the main component in the degree-n bifurcation set

The bifurcation point where a satellite component buds from another component is characterized by the existence of the common tangent line between the two osculating components appearing in the degree-n bifurcation set. We investigate the existence, location and number of bifurcation points for satellite components budding from the main component in the degree-n bifurcation set as well as a parametric boundary equation of the main component of the degree-n bifurcation set. Cusp points are also located on the boundary of the main component. Typical degree-n bifurcation sets and their components are illustrated with some computational results.     

Compact Dipole Antenna for Terrestrial Digital Multimedia Broadcasting Service

A compact dipole antenna for the terrestrial digital multimedia broadcasting (TDMB) application is presented. The length of the antenna is about 0.06λ at the TDMB resonance frequency of 190 MHz. Miniaturization of the antenna is achieved by using meander structures and lumped elements. The proposed antenna has two resonance frequencies and covers the TDMB band from 174 MHz to 216 MHz in Korea. The antenna has good impedance bandwidth and radiation characteristics for the TDMB. The experimental results of the designed dipole antenna are presented and analyzed.     

Temperature measurements using fiber optic polarization interferometer

A novel measurement method of temperature based on the phenomena that the phase difference between principle polarization states in the optical retarder is function of temperature is described. The polarization state of optical beam is changed as it passes through the optical retarder, which depends on the temperature. The temperature of optical retarder is determined by comparison of the power difference between principal polarization states. We demonstrate successfully the temperature measurement by using a polarization maintaining fiber as the optical retarder. With a 100 mm length of the fiber optic retarder, the change rate of phase difference on temperature was 0.236 rad/°C and the measurement error was ±0.038°C over the temperature range of −2.6 – +3.4°C. With a 11.5 mm length of the fiber optic retarder, the change rate of phase difference on temperature was 0.021 rad/°C and the measurement error was ±0.79°C over the temperature range of −8.5 – +86.5°C.     

Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs

Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibited a more significant V/sub t/ instability than that of PMOS negative BTI (NBTI), and limited the lifetime of HfO/sub 2/ MOSFETs. Although high-temperature forming gas annealing (HT-FGA) improved the interface quality by passivating the interfacial states with hydrogen, BTI behaviors were not strongly affected by the technique. Charge pumping measurements were extensively used to investigate the nature of the BTI degradation, and it was found that V/sub t/ degradation of NMOS PBTI was primarily caused by charge trapping in bulk HfO/sub 2/ rather than interfacial degradation. Deuterium (D/sub 2/) annealing was found to be an excellent technique to improve BTI immunity as well as to enhance the mobility of HfO/sub 2/ MOSFETs.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

Recent advances in theory and applications of scrambling techniquesfor lightwave transmission

This paper discusses recent advances in the theory and applications of scrambling techniques for digital lightwave transmission. It introduces the theories of sequence space and shift register generator (SRG) space which enable systematic analysis and mathematical manipulation of the behavior of sequences in general and the related SRG's. It discusses the behavior and realization of frame synchronous scrambling (FSS) and distributed sample scrambling (DSS) with emphasis on parallel sequences and the related parallel SRG's (PSRG). In addition, it describes self synchronous scrambling (SSS). Then the paper applies the theories to today's lightwave transmission systems by demonstrating practical parallel designs of FSS for SDH/SONET transmission, DSS for cell-based ATM transmission, and SSS for SDH-based ATM transmission. It finally considers how DSS can be used for scrambling of mixed isochronous and nonisochronous data in future high-speed data networks. The paper employs various new concepts and terminology, such as PSRG engine, generating vector discrimination matrix, (M,N) PSRG, sampling vector, correction vector, correction matrix, predictable scrambling concurrent sampling, and immediate correction     

Dual effects of fullerene doped to holographic polymer dispersed liquid crystals

Doping of conductive fullerene particles to the formulation of conventional holographic polymer dispersed liquid crystal‐induced dual effects of reducing both droplet coalescence and operating voltage. Fullerene induced an induction period which otherwise does not exist, followed by a gradual increase of diffraction efficiency to a saturation value being increased with increasing fullerene content. The increased diffraction efficiency was caused by the decreased droplet coalescence which was due to the hindered migration of LC by the fullerene particles. On the other hand, doped fullerene particles augmented the conductivity of polymer phase and hence the local electrical field imposed on LC droplet, which overcome the threshold for driving and reduced operating voltage and response times. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 5590–5596, 2007