Effect of ultrasonic treatment on photoelectric and luminescent properties of ZnSe crystals

The results of the effect of ultrasonic treatment of ZnSe crystals on the structure of the energy spectrum of electronic states of centers with deep levels forming photoelectric and luminescent properties of this compound are presented. It is for the first time proved experimentally that the climb of edge dislocations under the effect of ultrasound leads to regrouping and generation of defects forming deep levels, which manifest themselves in phenomena of photosensitivity and radiative recombination.     

Grouped Approach for the Design of H.264/AVC Motion Estimation Architectures

This letter presents a novel approach for organizing computational resources into groups within H.264/AVC motion estimation architectures, leading to reductions of up to 75% in the equivalent gate count with respect to state‐of‐the‐art designs.     

Inverted Solution Processable OLEDs Using a Metal Oxide as an Electron Injection Contact.

A new type of bottom‐emission electroluminescent device is described in which a metal oxide is used as the electron‐injecting contact. The preparation of such a device is simple. It consists of the deposition of a thin layer of a metal oxide on top of an indium tin oxide covered glass substrate, followed by the solution processing of the light‐emitting layer and subsequently the deposition of a high‐workfunction (air‐stable) metal anode. This architecture allows for a low‐cost electroluminescent device because no rigorous encapsulation is required. Electroluminescence with a high brightness reaching 5700 cd m^–2 is observed at voltages as low as 8 V, demonstrating the potential of this new approach to organic light‐emitting diode (OLED) devices. Unfortunately the device efficiency is rather low because of the high current density flowing through the device. We show that the device only operates after the insertion of an additional hole‐injection layer in between the light‐emitting polymer (LEP) and the metal anode. A simple model that explains the experimental results and provides avenues for further optimization of these devices is described. It is based on the idea that the barrier for electron injection is lowered by the formation of a space–charge field over the metal‐oxide–LEP interface due to the build up of holes in the LEP layer close to this interface.     

Reflectarray research at the communications research centre Canada

It has been a decade since a research program began on reflectarray technology at the Communications Research Centre Canada (CRC). This endeavor has demonstrated the advantages and shortcomings of this technology, the issues that ought to be addressed, and future opportunities. This paper summarizes the outcome of this research in the context of projects that have been carried out, and the resulting insight into reflectarray technology. Design methodology, fabrication process, and measurements results will be briefly discussed for each particular development.     

Effect of short glass fiber on structure and viscoelastic behavior of olefinic polymers synthesized with metallocene catalyst

Several composites were prepared on the basis of an ethylene homopolymer and different copolymers of ethylene and 1‐hexene, synthesized with a metallocene catalyst, as matrices and a content of a 5 wt % of short glass fiber. The effect of the fiber incorporation on the structure and mechanical and viscoelastic behaviors was analyzed for the different samples. The glass fibers induced a slightly higher crystallinity, and the crystallite morphology significantly changed (long spacings and crystal orientation). The incorporation of fibers did not reinforce the different matrices under study at this low content; consequently, the mechanical parameters, such as Young's modulus, yielding stress, and microhardness, were lower in the composites as compared with those values found in the neat polyolefins. The location and apparent activation energies of distinct relaxation processes are also discussed. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 1244–1255, 2003     

Specific features of optical orientation and relaxation of electron spins in quantum wells with a large spin splitting

The processes of optical spin orientation and spin relaxation of electrons are treated theoretically for semiconductor quantum wells, in which the spin splitting of the energy spectrum is comparable with the characteristic energy of charge carriers. The density matrix of photoexcited electrons at the instant of optical excitation is obtained in explicit form. A system of kinetic equations describing the behavior of the spin density matrix at an arbitrary relation between the average energy of charge carriers and the spin splitting is derived. It is demonstrated that, upon photoexcitation, a noticeable degree of orientation can be attained only in the pulse mode of operation, when the photoexcitation pulse duration is comparable with the period of spin precession in the field of spin splitting. It is shown that the total spin of the ensemble of electrons exhibits oscillations damping with time; the shape and damping time of the oscillations are sensitive to the parameters of photoexcitation and the spin splitting.     

Development of Stretch Solder Interconnections for Wafer Level Packaging

A wafer level packaging technique has been developed with an inherent advantage of good solder joint co-planarity suitable for wafer level testing. A suitable weak metallization scheme has also been established for the detachment process. During the fabrication process, the compliancy of the solder joint is enhanced through stretching to achieve a small shape factor. Thermal cycling reliability of these hourglass-shaped, stretch solder interconnections has been found to be considerably better than that of the conventional spherical-shaped solder bumps.     

Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same.     

Sensitivity analysis of an optimized bar-spring model with hill-top branching

Summary Characteristics of optimal solutions under nonlinear buckling constraints are investigated by using a bar-spring model. It is demonstrated that optimization under buckling constraints of a symmetric system often leads to a structure with hill-top branching, where a limit point and bifurcation points coincide. A general formulation is derived for imperfection sensitivity of the critical load factor corresponding to a hill-top branching point. It is shown that the critical load is not imperfection-sensitive even for the case where an asymmetric bifurcation point exists at the limit point.     

Mechanisms of n‐butanol formation in butyl acrylate latexes

The mechanisms involved in the formation of n‐butanol during the synthesis of butyl acrylate containing latices were investigated. The experimental results showed that neither the hydrolysis of butyl acrylate nor of the ester bond in the butyl acrylate segments of the polymer played a major role in the formation of n‐butanol, which was mainly generated from the polymer backbone, by transfer reactions to polymer chain followed by cyclization. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 5838–5846, 2007