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101.
This paper presents a new push-push voltage-controlled oscillator (VCO) technique that extracts a second harmonic output signal from a capacitive common node in a negative-gm oscillator topology. The generation of the second harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing: 1) significant voltage clipping and 2) different rise and fall times during the switching operation of the core transistors. Comparative investigations show the technique is more power efficient in the high-frequency region than a conventional push-push technique using an emitter common node. A prototype 17-GHz VCO realized in GaInP/GaAs HBT technology produces an output power of -6dBm and a phase noise of -110.4dBc/Hz at 1-MHz offset, which is equivalent to a VCO figure-of-merit of -184.3dBc/Hz, while drawing 4.38 mA from a 3.0-V supply 相似文献
102.
Jau-Jiun Chen Soohwan Jang F. Ren Yuanjie Li Hyun-Sik Kim D. P. Norton S. J. Pearton A. Osinsky S. N. G. Chu J. F. Weaver 《Journal of Electronic Materials》2006,35(4):516-519
Wet etch rates at 25°C for Zn0.9Mg0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min−1 with HCl/H2O (5×10−3−2×10−2 M) and 120–300 nm · min−1 with H3PO4/H2O (5×10−3−2×10−2 M). Both of these dilute mixtures exhibited diffusion-limited etching, with thermal activation energies of 2–3 kCal · mol−1. By sharp contrast, the etch rates for ZnO also grown on sapphire by PLD were much slower in similar solutions, with rates
of 1.2–50 nm · min−1 in HCl/H2O (0.01–1.2 M) and 12–54 nm · min−1 in H3PO4/H2O (0.02–0.15 M). The etching was reaction limited over the temperature range 25–75°C, with activation energies close to 6
kCal · mol−1. The resulting selectivity of Zn0.9Mg0.1O over ZnO can be a high as ∼400 with HCl and ∼30 with H3PO4. 相似文献
103.
Ganguly S. Navda V. Kim K. Kashyap A. Niculescu D. Izmailov R. Hong S. Das S.R. 《Selected Areas in Communications, IEEE Journal on》2006,24(11):2147-2158
In the recent past, there has been a tremendous increase in the popularity of VoIP services as a result of huge growth in broadband access. The same voice-over-Internet protocol (VoIP) service poses new challenges when deployed over a wireless mesh network, while enabling users to make voice calls using WiFi phones. Packet losses and delay due to interference in a multiple-hop mesh network with limited capacity can significantly degrade the end-to-end VoIP call quality. In this work, we discuss the basic requirements for efficient deployment of VoIP services over a mesh network. We present and evaluate practical optimizing techniques that can enhance the network capacity, maintain the VoIP quality and handle user mobility efficiently. Extensive experiments conducted on a real testbed and ns-2 provide insights into the performance issues and demonstrate the level of improvement that can be obtained by the proposed techniques. Specifically, we find that packet aggregation along with header compression can increase the number of supported VoIP calls in a multihop network by 2-3 times. The proposed fast path switching is highly effective in maintaining the VoIP quality. Our fast handoff scheme achieves almost negligible disruption during calls to roaming clients 相似文献
104.
A new high-slew-rate CMOS buffer amplifier consuming a very small quiescent current is proposed. This buffer amplifier recursively copies the output driving current and increases the tail current of the input differential pair during slewing. Since the proposed buffer has a possible slew rate higher than 10 V//spl mu/s for a load capacitance of 1 nF almost independently of static currents as low as 1 /spl mu/A, this buffer amplifier is promising for column driver ICs of flat panel displays that require low static power consumption, high current driving capabilities, and small silicon areas. 相似文献
105.
SeongKu Kim Geary K. Fetterman H.R. Zhang C. Wang C. Steier W.H. 《Electronics letters》2003,39(18):1321-1322
Electro-optic (EO) polymeric Mach-Zehnder (MZ) modulators with photo-bleaching (PB) induced waveguides and dual driving electrodes operating at 1.55 /spl mu/m wavelength have been demonstrated. The half-wave voltage of the integrated polymeric modulator was 4.5 V in a push-pull configuration with a 1.5 cm interaction length. The extinction ratio was greater than 20 dB, and the fibre-to-fibre insertion loss was 8 dB for the TM polarisation. The achieved fibre-to-fibre insertion loss and driving voltage are the best, to the authors knowledge, in the reported PB induced MZ EO polymeric modulators. 相似文献
106.
The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and √T‐dependent thermal red shifts. We observed uniform bottom emissions from a 1‐kb smart pixel chip of a 32×32 InGaAs PQR laser array flip‐chip bonded to a 0.35 µm CMOS‐based PQR laser driver. The PQR‐CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization. 相似文献
107.
Chien-Hwa Hwang Chang-Su Kim Kuo C.-C.J. 《Communications, IEEE Transactions on》2003,51(11):1858-1870
The signal-to-interference-plus-noise-ratio performance of the multistage linear parallel and successive interference cancellers (LPIC and LSIC) in a long-code code-division multiple-access system is analyzed using a graphical approach. The decision statistic is modeled as a Gaussian random variable, whose mean and variance can be expressed as functions of moments of R for the LPIC and L for the LSIC, respectively, where R is the correlation matrix of signature sequences and L is the strict lower triangular part of R. Since the complexity of calculating these moments increases rapidly with the growth of the stage index, a graphical representation of moments is developed to facilitate the computation. Propositions are presented to relate the moment calculation problem to several well-known problems in graph theory, i.e., the coloring, the graph decomposition, the biconnected component finding, and the Euler tour problems. It is shown that the derived analytic results match well with simulation results. 相似文献
108.
D. C. Kim S. Sayama M. Sekine 《Journal of Infrared, Millimeter and Terahertz Waves》2003,24(9):1499-1508
Sea clutter was measured using a millimeter wave radar with a frequency of 34.86GHz and pulse length of 30ns. A car carrier ship target was embedded in sea clutter. It has been discovered that target pulse-to-pulse fluctuations obey a Weibull distribution and sea clutter obey a Rayleigh distribution. We obtained target to clutter ratio improvement of 23.8dB by applying the cell average LOG/CFAR techniques. The computer simulation has been made to evaluate the detection probability and the false alarm probability. The simulation result was in good agreement with the observed data. 相似文献
109.
On-line dead-time compensation method using disturbance observer 总被引:7,自引:0,他引:7
Hyun-Soo Kim Hyung-Tae Moon Myung-Joong Youn 《Power Electronics, IEEE Transactions on》2003,18(6):1336-1345
A new on-line dead-time compensation method for a permanent magnet (PM) synchronous motor drive is proposed. Using a simple disturbance observer without any additional circuit and off-line experimental measurement, disturbance voltages in the rotor reference dq frame caused by the dead time and nonideal switching characteristics of power devices are estimated in an on-line manner and fed to voltage references in order to compensate the dead-time effects. The proposed method is applied to a PM synchronous motor drive system and implemented by using software of a digital signal processor (DSP) TMS320C31. Simulations and experiments are carried out for this system and the results well demonstrate the effectiveness of the proposed method. 相似文献
110.
Sang‐Heung Lee Seung‐Yun Lee Hyun‐Cheol Bae Ja‐Yol Lee Sang‐Hoon Kim Bo Woo Kim Jin‐Yeong Kang 《ETRI Journal》2005,27(5):569-578
The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz. 相似文献