Analyses of the practical adhesion strengths of the metal/polymer interfaces in electronic packaging

There is a plethora of techniques to measure the adhesion strength of metal/polymer interfaces. However, the practical adhesion strength, which is the work done in separating the film from the substrate (or one film from another), is very sensitive to the test methods and the mechanical effects, such as the residual stress, thickness and mechanical properties of the layers, strain rate, and phase angle. Deriving intrinsic-adhesion properties of the interfaces, which are independent of such parameters, from the practical adhesion-strength measurements is a formidable task. In the present work, data from the three commonly used adhesion tests; pull-out, 90°-peel, and T-peel tests are compared with the intrinsic-adhesion properties of the interface, such as the interface-fracture toughness or the interface-fracture energy, and their implications are discussed. Material systems analyzed were Cu-based lead frame/epoxy-molding compound (EMC) and Cu/Cr/polyimide.     

Interaction of metals with an organic semiconductor: Ag and In on PTCDA

The interaction of Ag and In with a thin film of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) was studied by near-edge X-ray absorption fine structure (NEXAFS). Upon Ag deposition on a PTCDA film of 20 nm thickness the relative intensities and lineshapes, as well as the angular dependence of the spectra remains unchanged, illustrating the formation of a chemically unreactive Ag/PTCDA interface. On the other hand, the adsorption of 0.3 nm In strongly decreases the intensity of the π^* resonances in C and O K-edge NEXAFS spectra. This is attributed to a strong charge transfer between In and PTCDA, leading to a redistribution of the charge in the molecule. However, the absence of a strong shift or new features and negligible dependence of peak intensities corresponding to π^* resonances on the In thickness indicate that the interaction between In and PTCDA is not accompanied by a covalent bond formation.     

High-pressure effect on the crystal and magnetic structure of LuMnO3: Correlation between a distortion of the triangular lattice and the symmetry of the magnetic state in hexagonal frustrated manganites

The effect of a high pressure (up to 6 GPa) on the crystal and magnetic structure of the hexagonal manganite LuMnO₃ is studied by neutron diffraction in the temperature range 10–295 K. It is found that, as the pressure increases, the ordered magnetic moment of Mn ions at T = 10 K decreases noticeably from 2.48 (0 GPa) to 1.98 μ_B (6 GPa). This decrease is due to an enhancement of the geometrical frustration effects on the triangular lattice. At the same time, the symmetry of the triangular antiferromagnetic state (the irreducible representation Γ₂) remains unchanged. A correlation is revealed between the distortion parameter of the triangular lattice formed by Mn ions and the symmetry of the antiferromagnetic state of hexagonal manganites RMnO₃. Based on this correlation, a generalized magnetic phase diagram of these compounds is constructed. The obtained phase diagram provides an explanation for the changes observed in the magnetic state of hexagonal manganites caused by high pressure and chemical substitution.     

Controller for digital audio power amplifier with bit stream input

A new controller for a digital audio amplifier with bit stream input is proposed. The proposed controller has excellent features such as wide error correction range and no limitation on the modulation index. The controller is implemented in the half-bridge class-D amplifier and performance is verified through experiments.     

A One‐Kilobit PQR‐CMOS Smart Pixel Array

The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and √T‐dependent thermal red shifts. We observed uniform bottom emissions from a 1‐kb smart pixel chip of a 32×32 InGaAs PQR laser array flip‐chip bonded to a 0.35 µm CMOS‐based PQR laser driver. The PQR‐CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.     

Electrotunable Non‐reciprocal Laser Emission from a Liquid‐Crystal Photonic Device

A liquid crystal (LC) photonic device with an anisotropic optical heterojunction structure has been fabricated. The device has a phase‐retarding nematic LC (NLC) layer sandwiched between two polymer cholesteric LC films with right‐handed helices of different pitches. Electrotunable non‐reciprocal light transmittance and unidirectional circularly polarized (CP) lasing emission have been successfully demonstrated for this device structure. Two left CP (LCP) lasing emission peaks are observed at the edges of the overlapping region between the two photonic bands in the structure and are shifted upon the application of a voltage. In contrast, a non‐reciprocal right CP (RCP) lasing emission peak emerges at one of the band edges and diminishes upon the application of a voltage. These phenomena are interpreted based on the selective reflection of RCP light and the reorientation of the NLC molecules by the application of a voltage.     

A fiber depolarizer using polarization beam splitter loop structure for narrow linewidth light source

A new fiber depolarizer employing a polarization beam splitter loop structure is proposed and demonstrated. The depolarizer is devised for broad-band operation and the depolarization of narrow linewidth light source without any help of polarization controllers or Faraday rotator mirrors. A polarizing method is developed that shows good performance without polarization control unit. Therefore, the proposed depolarizer can be cost-effective and easily configured. From experiments, low output degree of polarization less than 10% is obtained for a narrow linewidth light source.     

Parasitic-aware RF circuit design and optimization

RF circuit synthesis techniques based on particle swarm optimization and adaptive simulated annealing with tunneling are described, and comparisons of parasitic-aware designs of an RF distributed amplifier and a nonlinear power amplifier are presented. Synthesized in 0.35-/spl mu/m digital CMOS using a single 3.3-V power supply, the designs provide an 8-dB gain and 8-GHz bandwidth for a four-stage distributed amplifier, and 1.2-W output power with 55% drain efficiency at 900 MHz for a three-stage power amplifier. A standard circuit simulator, HSPICE or SPECTRE, embedded in an optimization loop is used to evaluate cost functions. The proposed design and optimization methodology is computationally efficient and robust in searching complex multidimensional design spaces.     

Semiconductor optical amplifier for CWDM operating over 1540-1620 nm

A semiconductor optical amplifier was developed for coarse wavelength-division-multiplexing (CWDM) operating over 1540-1620 nm (C-L band). A unique quantum-well structure was designed to meet the requirements for the CWDM operation such as wide bandwidth, low polarization-dependent gain, and high-saturation power at the short wavelength end of the band (1540 nm). Over the band, 24-dB maximum chip gain was obtained with less than 4.3-dB gain flatness and more than 14.6-dBm saturation power.     

Pseudorandomness of Basic Structures in the Block Cipher KASUMI

The notion of pseudorandomness is the theoretical foundation on which to consider the soundness of a basic structure used in some block ciphers. We examine the pseudorandomness of the block cipher KASUMI, which will be used in the next‐generation cellular phones. First, we prove that the four‐round unbalanced MISTY‐type transformation is pseudorandom in order to illustrate the pseudorandomness of the inside round function FI of KASUMI under an adaptive distinguisher model. Second, we show that the three‐round KASUMI‐like structure is not pseudorandom but the four‐round KASUMI‐like structure is pseudorandom under a non‐adaptive distinguisher model.