Construction of efficient error-limiting variable length codes

A novel method for generating an optimal binary prefix condition code is described. The proposed code generation method generates optimal variable length codes that have short average error spans compared to the existing self-synchronising codes. A technique for calculating the expected error spans of variable length codes are also presented     

Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wirelasers with different current blocking configurations

GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations, n-blocking on p-substrate (VIPS), p-n-p-n blocking on n-substrate (VI(PN)_nS) and p-blocking on n-substrate (VINS) have been fabricated and characterized. The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 mm, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 mm/mA, and the temperature tuning rate was measured to be 0.14 nm/°C. Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here     

Motion based object tracking with mobile camera

An efficient algorithm which detects and tracks a moving object is proposed. The global motion energy caused by camera movement is eliminated by finding the maximal matching position with the cross-correlation value between two consecutive frames using the spiral scanning technique. The region of a moving object is segmented exactly by combining the results of the temporal derivatives and edge map from one image, and the actual centroid of the moving object is determined as the mid-point of the cumulative distribution of the projection profile of the region     

Generalized Equilibrium Problems and Generalized Complementarity Problems

From a general minimax inequality or an abstract lopsided saddle-point theorem, we deduce general Karamardian-type equilibrium theorems and generalized complementarity theorems. Our new results extend a number of well-known earlier works of many authors.     

Improved strained HEMT characteristics using double-heterojunctionIn0.65Ga0.35As/In0.52Al0.48As design

The DC and microwave properties of strained In_0.65Ga _0.35As/In₀₅₂Al_0.48As HEMTs (high electron-mobility transistors) with double-heterojunction design are presented. The high sheet carrier density and good carrier confinement give rise to excellent device performance with very low output conductance. For 1×150-μm² long-gate HEMTs, the measured cutoff frequency f_T and maximum frequency of oscillation f_max are as high as 37 and 66 GHz, respectively     

Simulation of polarization converter formed by poling-inducedpolymer waveguides

A polarization converter using electrooptic (EO) polymer waveguides is proposed and it is simulated by a full vectorial beam propagation method (VBPM) for anisotropic medium. First, an efficient structure of poling electrodes is proposed for the fabrication of TE-mode poling-induced waveguides in EO polymer. For given electrode structures of both TE-mode and TM-mode waveguides, poling-induced dielectric tensors are calculated by the finite-element method to provide refractive index distribution, data for VBPM simulation. It is shown numerically that the poled TE and TM mode waveguides work efficiently as the corresponding polarization filters. Then, new poling electrodes are suggested to fabricate a waveguide device formed by connecting the TE and TM mode waveguides adiabatically with a slowly varying structure. This waveguide device has the optic axis slowly rotating as one moves along the propagation direction, so that it will act as polarization converter. VBPM simulation shows that the polarization of the guided mode rotates following the optic axis distribution. Polarization conversion is demonstrated successfully with high conversion efficiency and low excess loss     

Parasitic Bipolar Junction Transistors in a Floating-Gate MOSFET for Fluorescence Detection

In this letter, we examined whether the parasitic bipolar junction transistors (BJTs) in the MOSFET fabricated by the standard CMOS process can play a role as a fluorescence detector. To suppress the action of two vertical parasitic BJTs, the gate and n-well were tied in the parasitic BJTs, and the body node was connected to the drain. The proposed device was compared with the inherent and the parasitic diodes in the MOSFET. It had 100 times higher photocurrents than the diodes in the MOSFET. In addition, it was applied for the detection of the fluorescent signal, and could detect near 10 nM of Alexa 546. Therefore, CMOS-process-compatible parasitic BJTs can be used as a photodetector in an integrated fluorescence detector.     

A novel bidirectional CMOS transceiver for chip-to-chip optical interconnects

A novel bidirectional complementary metal-oxide-semiconductor (CMOS) transceiver for chip-to-chip optical interconnects operating at 2.5 Gb/s is proposed, which shares the common block of a receiver and a transmitter on a single chip. The share of the common block of two circuits makes it possible to save 55% or 20% of power dissipation, depending on the operating mode. The chip in 0.18-/spl mu/m CMOS technology occupies an area of 0.82/spl times/0.82 mm/sup 2/, 70% of the total area of a typical unshared transceiver chip. The transmitting and receiving modes of operation show -3-dB bandwidths of 2.2 and 2.4 GHz and electrical isolations of -28 and -40 dB, respectively.