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111.
Yeom  H.J. Park  Y.C. Chang  Y.H. 《Electronics letters》2007,43(25):1410-1411
Presented is an eigen filter to remove autogenic electrical stimulation artefacts and M-waves while preserving the volitional electromyographic signal. The optimality of the eigen filter is shown, along with simulated and measured data to indicate its superior performance over conventional prediction error filters.  相似文献   
112.
Polyvinyl alcohol (PVA) nanofibers containing Ag nanoparticles were prepared by electrospinning PVA/silver nitrate (AgNO3) aqueous solutions, followed by short heat treatment, and their antimicrobial activity was investigated for wound dressing applications. Since PVA is a water soluble and biocompatible polymer, it is one of the best materials for the preparation of wound dressing nanofibers. After heat treatment at 155 °C for 3 min, the PVA/AgNO3 nanofibers became insoluble, while the Ag+ ions therein were reduced so as to produce a large number of Ag nanoparticles situated preferentially on their surface. The residual Ag+ ions were reduced by subsequent UV irradiation for 3 h. The average diameter of the Ag nanoparticles after the heat treatment was 5.9 nm and this value increased slightly to 6.3 nm after UV irradiation. It was found that most of the Ag+ ions were reduced by the simple heat treatment. The PVA nanofibers containing Ag nanoparticles showed very strong antimicrobial activity. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2468–2474, 2006  相似文献   
113.
There is a plethora of techniques to measure the adhesion strength of metal/polymer interfaces. However, the practical adhesion strength, which is the work done in separating the film from the substrate (or one film from another), is very sensitive to the test methods and the mechanical effects, such as the residual stress, thickness and mechanical properties of the layers, strain rate, and phase angle. Deriving intrinsic-adhesion properties of the interfaces, which are independent of such parameters, from the practical adhesion-strength measurements is a formidable task. In the present work, data from the three commonly used adhesion tests; pull-out, 90°-peel, and T-peel tests are compared with the intrinsic-adhesion properties of the interface, such as the interface-fracture toughness or the interface-fracture energy, and their implications are discussed. Material systems analyzed were Cu-based lead frame/epoxy-molding compound (EMC) and Cu/Cr/polyimide.  相似文献   
114.
The interaction of Ag and In with a thin film of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) was studied by near-edge X-ray absorption fine structure (NEXAFS). Upon Ag deposition on a PTCDA film of 20 nm thickness the relative intensities and lineshapes, as well as the angular dependence of the spectra remains unchanged, illustrating the formation of a chemically unreactive Ag/PTCDA interface. On the other hand, the adsorption of 0.3 nm In strongly decreases the intensity of the π* resonances in C and O K-edge NEXAFS spectra. This is attributed to a strong charge transfer between In and PTCDA, leading to a redistribution of the charge in the molecule. However, the absence of a strong shift or new features and negligible dependence of peak intensities corresponding to π* resonances on the In thickness indicate that the interaction between In and PTCDA is not accompanied by a covalent bond formation.  相似文献   
115.
This paper presents a review of our current experimental research on GaP nanowires grown by a vapor deposition method. Their structural, electrical, opto-electric transport, and gas-adsorption properties are reviewed. Our structural studies showed that a GaP nanowire consisted of a core–shell structure with a single-crystalline GaP core and an outer Ga2O3 layer. The individual GaP nanowires exhibited n-type field effects. Their electron mobilities were in the range of about 6 to 22 cm2/V s at room temperature. When the nanowires were illuminated with an ultraviolet light source, an abrupt increase of conductance occurred resulting from carrier generation in the nanowire and de-adsorption of adsorbed OH- or O2 - ions on the Ga2O3 surface shell. Using an intrinsic Ga2O3 shell layer as a gate dielectric, top-gated GaP nanowire field-effect transistors were fabricated and characterized. Like other metal oxide nanowires, the carrier concentration and mobility of GaP nanowires were significantly affected by the surface molecular adsorption of OH or O2. The GaP nanowire devices were fabricated as sensors for NO2, NH3, and H2 gases by using a simple metal decoration technique. PACS 73.63.-b; 72.80.Ey; 85.35.-p  相似文献   
116.
In this paper, the nonfragile control problem for synchronization of a class of chaotic dynamical systems with controller gain variations is studied. Using the Lyapunov method and LMI (linear matrix inequality) technique, a criterion for the existence of the nonfragile controller for synchronization is derived in terms of LMI. To show the effectiveness of the proposed method, the control problem is applied to Genesio chaotic system.  相似文献   
117.
The effect of a high pressure (up to 6 GPa) on the crystal and magnetic structure of the hexagonal manganite LuMnO3 is studied by neutron diffraction in the temperature range 10–295 K. It is found that, as the pressure increases, the ordered magnetic moment of Mn ions at T = 10 K decreases noticeably from 2.48 (0 GPa) to 1.98 μB (6 GPa). This decrease is due to an enhancement of the geometrical frustration effects on the triangular lattice. At the same time, the symmetry of the triangular antiferromagnetic state (the irreducible representation Γ2) remains unchanged. A correlation is revealed between the distortion parameter of the triangular lattice formed by Mn ions and the symmetry of the antiferromagnetic state of hexagonal manganites RMnO3. Based on this correlation, a generalized magnetic phase diagram of these compounds is constructed. The obtained phase diagram provides an explanation for the changes observed in the magnetic state of hexagonal manganites caused by high pressure and chemical substitution.  相似文献   
118.
The boundary is approximated by a polygon which can be encoded with the smallest number of bits for maximum distortion. The temporal redundancy between two successive frames is efficiently removed with the proposed scheme, resulting in a lower bit rate than the conventional algorithms  相似文献   
119.
DC and microwave measurements on AlSb/InAs HEMTs with a gate length of 0.21 μm are reported. The reverse gate characteristics exhibit relatively low gate leakage current and gate-drain breakdown voltages as high as 5 V. Equivalent circuit modelling yields an fT of 110 GHz after removal of the gate bonding pad capacitance. The bias dependence of fmax is examined indicating a significant reduction in the unilateral gain due to impact ionisation  相似文献   
120.
A new controller for a digital audio amplifier with bit stream input is proposed. The proposed controller has excellent features such as wide error correction range and no limitation on the modulation index. The controller is implemented in the half-bridge class-D amplifier and performance is verified through experiments.  相似文献   
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