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11.
Modeling ion implantation of HgCdTe 总被引:2,自引:0,他引:2
H. G. Robinson D. H. Mao B. L. Williams S. Holander-Gleixner J. E. Yu C. R. Helms 《Journal of Electronic Materials》1996,25(8):1336-1340
Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction
is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant
doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by
Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T
by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution
depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released,
they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results
of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing
conditions, including implant dose, annealing temperature, and doping background. 相似文献
12.
Chih-Wea Wang Chi-Feng Wu Jin-Fu Li Cheng-Wen Wu Tony Teng Kevin Chiu Hsiao-Ping Lin 《Journal of Electronic Testing》2002,18(6):637-647
In this paper we propose a novel built-in self-test (BIST) design for embedded SRAM cores. Our contribution includes a compact and efficient BIST circuit with diagnosis support and an automatic diagnostic system. The diagnosis module of our BIST circuit can capture the error syndromes as well as fault locations for the purposes of repair and fault/failure analysis. In addition, our design provides programmability for custom March algorithms with lower hardware cost. The combination of the on-line programming mode and diagnostic system dramatically reduces the effort in design debugging and yield enhancement. We have designed and implemented test chips with our BIST design. Experimental results show that the area overhead of the proposed BIST design is only 2.4% for a 128 KB SRAM, and 0.65% for a 2 MB one. 相似文献
13.
介绍了单端正向变换器基本电路,重点叙述带三路调节DC电压的100KHZ180W离线电源。它采用具有低导电阻RDS和低栅极电荷Qg的新型场效应管(QFET)作为变换电路的主开关器件,降低了电源开关损耗并提高了效率3%-5%。 相似文献
14.
JaeHyuk Shin Ozturk C. Sakamoto S.R. Chiu Y.J. Dagli N. 《Microwave Theory and Techniques》2005,53(2):636-643
A novel traveling-wave electrode utilizing capacitively loaded T-rail elements was developed for low-voltage high-speed substrate-removed GaAs/AlGaAs electrooptic modulators. Electrodes with varying dimensions were fabricated and characterized. Electrode phase velocity, characteristic impedance, loss coefficient, and capacitive loading were extracted from the measured s-parameters up to 40 GHz. Electrode was also simulated using a finite-element solver. The measured and calculated electrode capacitance values were found to be in excellent agreement, showing that the electrode can be precisely designed. Approaches were outlined to provide a group velocity-matched very high-speed modulator electrode suitable for a low drive-voltage substrate-removed GaAs/AlGaAs electro-optic modulator 相似文献
15.
Song LI Guo Mao WANG Zhi Song LIU 《数学学报(英文版)》2005,21(6):1475-1486
The purpose of this paper is to investigate the mean size formula of wavelet packets in Lp for 0 〈 p ≤ ∞. We generalize a mean size formula of wavelet packets given in terms of the p-norm joint spectral radius and we also give some asymptotic formulas for the Lp-norm or quasi-norm on the subdivision trees. All results will be given in the general setting, 相似文献
16.
Mao‐Chuan Yuan Ping‐I Shih Chen‐Han Chien Ching‐Fong Shu 《Journal of polymer science. Part A, Polymer chemistry》2007,45(14):2925-2937
We have synthesized a blue‐light‐emitting polyfluorene (PF) derivative ( PF‐CBZ‐OXD ) that presents bulky hole‐transporting carbazole and electron‐transporting oxadiazole pendent groups functionalized at the C‐9 positions of alternating fluorene units. The results from photoluminescence and electrochemical measurements indicate that both the side chains and the PF main chain retain their own electronic characteristics in the copolymer. An electroluminescent device incorporating this polymer as the emitting layer was turned on at 4.5 V; it exhibited a stable blue emission with a maximum external quantum efficiency of 1.1%. Moreover, we doped PF‐CBZ‐OXD and its analogue PF‐TPA‐OXD with a red‐light‐emitting iridium phosphor for use as components of phosphorescent red‐light emitters to investigate the effect of the host's HOMO energy level on the degree of charge trapping and on the electrophosphorescent efficiency. We found that spectral overlap and individual energy level matching between the host and guest were both crucial features affecting the performance of the electroluminescence devices. Atomic force microscopy measurements indicated that the dipolar nature of PF‐CBZ‐OXD , in contrast to the general nonpolarity of polydialkylfluorenes, provided a stabilizing environment that allowed homogeneous dispersion of the polar iridium triplet dopant. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 2925–2937, 2007 相似文献
17.
Calculations and detailed first principle and thermodynamic analyses have been performed to understand the formation mechanism of K2Ti6O13 nanowires (NWs) by a hydrothermal reaction between bulk Na2Ti3O7 crystals and a KOH solution. It is found that direct ion exchange between K+ and Na+ plus H+ interactions with [TiO6] octahedra in Na2Ti3O7 promote the formation of an intermediate H2K2Ti6O14 phase. The large lattice mismatch between this intermediate phase and the bulk Na2Ti3O7 structure, and the large energy reduction associated with the formation of this intermediate phase, drive the splitting of the bulk crystal into H2K2Ti6O14 NWs. However, these NWs are not stable because of large [TiO6] octahedra distortion and are subject to a dehydration process, which results in uniform K2Ti6O13 NWs with narrowly distributed diameters of around 10 nm. 相似文献
18.
Takeshi Kondo Sang Min Lee Michal Malicki Benoit Domercq Seth R. Marder Bernard Kippelen 《Advanced functional materials》2008,18(7):1112-1118
We report on a single‐layer organic memory device made of poly(N‐vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag‐NDs). Devices exhibit high ON/OFF switching ratios of 104. This level of performance could be achieved by modifying the ITO electrodes with some Ag‐NDs that act as trapping sites, reducing the current in the OFF state. Temperature dependence of the electrical characteristics suggest that the current of the low‐resistance state can be attributed to Schottky charge tunnelling through low‐resistance pathways of Al particles in the polymer layer and that the high‐resistance state can be controlled by charge trapping by the Al particles and Ag‐NDs. 相似文献
19.
20.
Dong Il Han Hoe Jin Hah Hong-Woo Park Sang Man Koo 《Journal of Sol-Gel Science and Technology》2004,32(1-3):47-51
Composite silica particles were synthesized by a two-step (acid-base) process in an aqueous solution with a mixture of organoalkoxysilane monomers. The two-step process separates the hydrolysis and condensation procedures to easily control condensation rate. In this study, the silane monomers used were phenyltrimethoxysilane (PTMS), vinyltrimethoxysilane (VTMS), methyltrimethoxysilane (MTMS), and tetraethyl-orthosilicate (TEOS). The physical properties of the resultant composite particles were investigated with the change in the molar ratio of monomers. The size of the particles increased with increasing the molar ratio of RaSi(OR)3/RbSi(OR)3 or RaSi(OR)3/TEOS (Ra: phenyl; Rb: vinyl, methyl). 相似文献