首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   16806篇
  免费   1086篇
  国内免费   142篇
化学   8537篇
晶体学   117篇
力学   395篇
综合类   3篇
数学   1243篇
物理学   3211篇
无线电   4528篇
  2023年   203篇
  2022年   178篇
  2021年   432篇
  2020年   362篇
  2019年   418篇
  2018年   373篇
  2017年   377篇
  2016年   643篇
  2015年   491篇
  2014年   699篇
  2013年   1046篇
  2012年   1149篇
  2011年   1306篇
  2010年   850篇
  2009年   851篇
  2008年   1134篇
  2007年   999篇
  2006年   934篇
  2005年   870篇
  2004年   746篇
  2003年   595篇
  2002年   585篇
  2001年   413篇
  2000年   381篇
  1999年   285篇
  1998年   210篇
  1997年   204篇
  1996年   188篇
  1995年   150篇
  1994年   122篇
  1993年   93篇
  1992年   95篇
  1991年   81篇
  1990年   73篇
  1989年   50篇
  1988年   55篇
  1987年   34篇
  1986年   20篇
  1985年   38篇
  1984年   34篇
  1983年   34篇
  1982年   28篇
  1981年   23篇
  1980年   19篇
  1979年   22篇
  1978年   17篇
  1977年   14篇
  1976年   17篇
  1975年   14篇
  1972年   11篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
81.
This paper proposes a new LDMOSFET structure with a trenched sinker for high‐power RF amplifiers. Using a low‐temperature, deep‐trench technology, we succeeded in drastically shrinking the sinker area to one‐third the size of the conventional diffusion‐type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power‐added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below ?40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.  相似文献   
82.
In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells.  相似文献   
83.
A new discontinuous modulation method based on space-vector control is proposed and analyzed. The proposed technique employs a pulse-dropping method and is designed in the time domain. It features a very wide modulation range while maintaining the required waveform qualities and switching numbers in the overmodulation region. Since the modulation method and modulation index equation are simple, the proposed technique can be easily implemented by software and is applicable to the overmodulation region in ac motor drives. The performance indexes are discussed and experiments have been performed.  相似文献   
84.
Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2 (X=0.17, 0.25, 0.33, 0.5) compounds are prepared by a simple combustion method. The Rietvelt analysis shows that these compounds could be classified as having the α-NaFeO2 structure. The initial charge-discharge and irreversible capacity increases with the decrease of x in Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2. Indeed, Li[Ni0.50Mn0.50]O2 compound shows relatively low initial discharge capacity of 200 mAh/g and large capacity loss during cycling, with Li[Ni0.17Li0.22Mn0.61]O2 and Li[Ni0.25Li0.17Mn0.58]O2 compounds exhibit high initial discharge capacity over 245 mAh/g and stable cycle performance in the voltage range of 4.8 -2.0 V. On the other hand, XANES analysis shows that the oxidation state of Ni ion reversibly changes between Ni2+ and about Ni3+, while the oxidation state of Mn ion sustains Mn4+ during charge-discharge process. This result does not agree with the previously reported ‘electrochemistry model’ of Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2, in which Ni ion changes between Ni2+ and NI4+. Based on these results, we modified oxidation-state change of Mn and Ni ion during charge-discharge process.  相似文献   
85.
In this paper, we prove the Hyers-Ulam-Rassias stability of homomorphisms in quasi-Banach algebras associated to the Pexiderized Cauchy functional equation. This is applied to investigate homomorphisms between quasi-Banach algebras. The concept of Hyers-Ulam-Rassias stability originated from Th.M. Rassias' stability theorem that appeared in his paper [Th.M. Rassias, On the stability of the linear mapping in Banach spaces, Proc. Amer. Math. Soc. 72 (1978) 297-300].  相似文献   
86.
Features of radical polymerization of styrene in the presence of (diphenylbutadiene)tricarbonylchromium were studied.  相似文献   
87.
The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (fT) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region  相似文献   
88.
A new compact millimeter-wave distance-measurement sensor prototype has been developed. The sensor is a step-frequency radar implemented using coherent heterodyne technique. It operates in Ka-band (26.5-40 GHz) and is realized using MICs and MMICs. The sensor transmits sinusoidal signals of incremental frequencies and demodulates the received signals into base-band I/Q signals for processing. Experimental results show that the sensor is capable of measuring distance with less than 0.2 inch of absolute error and a low transmitted power of only -20±3 dBm  相似文献   
89.
90.
We address the problem of determining the topology and bridge-capacity assignments for a network connecting a number of token rings via source-routing bridges. The objective is to minimize the cost of bridge installations while meeting the network users' performance requirements. The problem is modeled as a mixed 0–1 integer program. A comparison is given between two solution algorithms: a simulated annealing algorithm using the flow-deviation algorithm for each routing subproblem, and a drop algorithm using the simplex method for the same subproblems to provide benchmark solutions. In the former algorithm, the routing subproblem is formulated as a nonlinear program with penalty functions to model node and link capacity constraints, and in the latter as a multicommodity flow model with the same capacity constraints. Computational results show that the simulated-annealing/flow-deviation algorithm produced substantially better solutions than the LP-based drop algorithm.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号