InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.     

Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

In p-GaN implanted with Mn (3×10¹⁶ cm⁻² at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely Ga_xMn_1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.     

Abnormal junction profile of silicided p+/n shallowjunctions: a leakage mechanism

The leakage mechanism in p⁺/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions     

Extended adaptive RBF equaliser for overcoming co-channelinterference

The authors investigate the problem of nonlinear adaptive equalisation in the presence of intersymbol interference, additive white Gaussian noise and co-channel interference. An extended radial basis function (RBF) network is proposed, in which regression weights are used in the output layer and the hidden unit is defined to have the Gaussian formula with the Mahalanobis distance. It is shown by simulation that the proposed structure gives reduced computational complexity without performance degradation, compared to that of the conventional RBF equaliser     

Robust backward adaptive formant prediction for speech coder

To improve the error performance of speech coders, an adaptation method for the backward adapted formant predictor is proposed. The filtered residual signal is used instead of the reconstructed output signal as the input to an adaptation of the formant predictor. The performance of the filtered-residual driven adaption method in the noise free channel is as good as that of conventional output driven adaptation. Moreover, the new adaptation method maintains the same robustness to channel errors as residual driven adaptation     

A study of density in electron-cyclotron-resonance plasma

A theory is developed for the density profile of low temperature plasmas confined by applied magnetic field and an experiment of the electron-cyclotron-resonance (ECR) plasma is conducted to compare the theoretical prediction and experimental measurements. Due to a large electron mobility along the magnetic field, electrons move quickly out of the system, leaving ions behind and building a space charge potential, which leads to the ambipolar diffusion of ions. In a steady-state condition, the plasma generation by ionization of neutral molecules is in balance with plasma loss due to the diffusion, leading to the electron temperature equation, which is expressed in terms of the plasma size, chamber pressure, and the ionization energy and cross section of neutrals. The power balance condition leads to the plasma density equation, which is also expressed in terms of the electron temperature, the input microwave power and the chamber pressure. It is shown that the plasma density increases, reaches its peak and decreases, as the chamber pressure increases from a small value (0.1 mTorr). These simple expressions of electron temperature and density provide a scaling law of ECR plasma in terms of system parameters. After carrying out an experimental observation, it is concluded that the theoretical predictions of the electron temperature and plasma density agree remarkably well with experimental data     

Improved Yen-Joye's authenticated multiple-key agreement protocol

An authenticated multiple-key agreement protocol is proposed. The protocol is not only secure against the unknown-key attack but also more efficient than other protocols.     

Flicker noise in gate overlapped polycrystalline silicon thin-filmtransistors

A study of the noise performance of gate overlapped polycrystalline silicon thin-film transistors (TFTs) is presented. Low-frequency noise measurements were carried out on n- and p-type samples fabricated by excimer laser crystallization. It is shown that the carrier number fluctuation model applies not only to n-type but also to p-type devices. The density of oxide traps was extracted from the noise measurements and was of the order of 10¹⁸-10¹⁹ eV^-1 cm^-3     

Wave-oriented signal processing of dispersive time-domainscattering data

Phase-space data processing is receiving increased attention because or its potential for furnishing new discriminants relating to classification and identification of targets and other scattering environments. Primary emphasis has been on time-frequency processing because of its impact on transient, especially wideband, short-pulse excitations. Here, we investigate the windowed Fourier transform, the wavelet transform, and model based superresolution algorithms within the context of a fully quantified and calibrated test problem investigated by us previously: two-dimensional (2-D) short-pulse plane wave scattering by a finite periodic array of perfectly conducting coplanar flat strips. Because the forward problem has been fully calibrated and parametrized, some quantitative measures can be assigned with respect to the tradeoffs of these time-frequency algorithms, yielding tentative performance assessments of the tested processing algorithms     

Recording of volume hologram using a beam pattern from taperedoptical fiber

A photorefractive volume hologram was recorded and probed using light diffracted from a tapered optical fiber as a reference beam. A single-mode fiber (SMF) was chemically etched and tapered to give a complicated beam pattern, and it is shown that the tapered optical fiber can be utilized to increase the storage density of the volume hologram. Spatial selectivity of the volume hologram with this method was increased by two times compared to the normal SMF referencing, which is due to the fact that the complicated beam pattern has little correlation with its shifted version