Fabrication and characterization of freestanding ultrathin diamond-like carbon targets for high-intensity laser applications

Here, we report the fabrication of diamond-like carbon (DLC) thin films using pulsed laser deposition (PLD). PLD is a well-established technique for deposition of high-quality DLC thin films. Carbon tape target was ablated using a KrF (248 nm, 25 ns, 20 Hz) excimer laser to deposit DLC films on soap-coated substrates. A laser fluence between 8.5 and 14 J/cm² and a target to substrate distance of 10 cm was used. These films were then released from substrates to obtain freestanding DLC thin foils. Foil thicknesses from 20 to 200 nm were deposited using this technique to obtain freestanding targets of up to 1-inch square area. Typically, 100-nm-thick freestanding DLC films were characterized using different techniques such as AFM, XPS, and nano-indentation. AFM was used to obtain the film surface roughness of 9 nm rms of the released film. XPS was utilized to obtain 74 % sp², 23 % sp³, and 3 % C–O bond components. Nano-indentation was used to characterize the film hardness of 10 GPa and Young’s modulus of 110 GPa. Damage threshold properties of the DLC foils were studied (1,064 nm, 6 ns) and found to be 7 × 10¹⁰ W/cm² peak intensity for our best ultrathin DLC foils.     

CdxHg(1−x)Te Alloy Colloidal Quantum Dots: Tuning Optical Properties from the Visible to Near‐Infrared by Ion Exchange

The energy gap between valence and conduction levels in colloidal semiconductor quantum dots can be tuned via the nanoparticle diameter when this is comparable to or less than the Bohr radius. In materials such as cadmium mercury telluride, which readily forms a single phase ternary alloy, this quantum confinement tuning can also be augmented by compositional tuning, which brings a further degree of freedom in the bandgap engineering. Here it is shown that compositional control of 2.3 nm diameter Cd_xHg_(1?x)Te nanocrystals by exchange of Hg²⁺ in place of Cd²⁺ ions can be used to tune their optical properties across a technologically useful range, from 500 nm to almost 1200 nm. Data on composition‐dependent changes in the optical properties are provided, including bandgap, extinction coefficient, emission energy and spectral shape, Stokes shift, quantum efficiency, and radiative lifetimes as the exchange process occurs, which are highly relevant for those seeking to use these technologically important QD materials.     

New phase and polarization-insensitive receivers for coherent optical fibre communication systems

We propose new phase- and polarisation-insensitive receivers for coherent optical fibre communication systems which have the following characteristic features: (a) insensitivity to LO excess noise in addition to phase- and polarization-insensitivity; (b) absence of optical PLL and polarization control devices; (c) a smaller detector bandwidth requirement than for heterodyne systems; (d) the same source linewidth requirement as for heterodyne systems with non-coherent demodulation; (e) the possibility of a complete optoelectronic integrated circuit (OEIC) version in the future.     

A stochastic manpower planning model under varying class sizes

Solution related to different types of manpower planning problems arising in different industries and organizations are very much helpful for proper planning and implementation of different objectives. Previously those type of problems are mostly solved under the deterministic set up. Gradually several scientists have developed different types of stochastic models appropriate for solving such types of problems. The present study is an attempt to develop a stochastic manpower planning model under the set up where the classes are of varying sizes and promotion occurs only on the basis of seniority. The work of second author was supported by a research fellowship from Council of Scientific and Industrial Research (Sanction No. 9/28(611)/2003-EMR-I), India.     

Neutrino emissivity of quark matter at finite temperatures

We evaluate the emissivity rates for d-decay and s-decay by exactly solving the angular integrals involved and without assuming the degeneracy of electrons. We have also studied the effects of QCD coupling constant as well as the s-quark mass on the emissivity rates. We find that these parameters are important in determining the threshold and extinction densities for d- and s-decays.     

Characterization of germanium implanted Si1−xGex layer

Characterization of a Si_1−xGe_x layer formed by high-dose germanium implantation and subsequent solid phase epitaxy is reported. Properties of this layer are obtained from electrical measurements on diodes and transistors fabricated in this layer. Results are compared with those of the silicon control devices. It was observed that the germanium implantation created considerable defects that are difficult to eliminate with annealing. These defects result in boron deactivation in the p-type regions of the devices, giving rise to larger resistance. Optimization of the device structure and fabrication process is discussed.     

A proposed semiconductor laser pump-probe source

A model is presented which determines the output from a semiconductor laser as a function of the direct current (d.c.) and radio frequency (r.f.) current applied to the laser. It is shown that by adjusting these two components the output optical pulse from a laser can be shifted in time without change to the pulse shape or height. Experimental results are presented which support the model. It is suggested how these results can be used to produce a semiconductor pump-probe source, which is essential for the development of optical probing.