Combination of Heme Oxygenase-1 Inhibition and Sigma Receptor Modulation for Anticancer Activity

Cancer is a multifactorial disease that may be tackled by targeting different signaling pathways. Heme oxygenase-1 (HO-1) and sigma receptors (σRs) are both overexpressed in different human cancers, including prostate and brain, contributing to the cancer spreading. In the present study, we investigated whether HO-1 inhibitors and σR ligands, as well a combination of the two, may influence DU145 human prostate and U87MG human glioblastoma cancer cells proliferation. In addition, we synthesized, characterized, and tested a small series of novel hybrid compounds (HO-1/σRs) 1–4 containing the chemical features needed for HO-1 inhibition and σR modulation. Herein, we report for the first time that targeting simultaneously HO-1 and σR proteins may be a good strategy to achieve increased antiproliferative activity against DU145 and U87MG cells, with respect to the mono administration of the parent compounds. The obtained outcomes provide an initial proof of concept useful to further optimize the structure of HO-1/σRs hybrids to develop novel potential anticancer agents.     

Measurement of πphotoproduction on the proton from 550 to 1500 MeV at GRAAL

Neutral pion photoproduction has been measured from 550 to 1500 MeV with the GRAAL facility, located at the ESRF in Grenoble. Differential cross-section and beam asymmetry have been measured over a wide angular range. These high-precision data improve significantly the database for the beam asymmetry in the second and third resonance regions covering for the first time the energy domain 1100-1500 MeV. New partial-wave analyses including these data are presented for which the beam asymmetry brings crucial constraints.     

Power bipolar transistors with a fast recovery integrated diode

We have integrated a fast recovery diode in the structure of a power bipolar transistor. This integral diode is physically connected between the emitter and the collector of the transistor and can be used as a free-wheeling diode in power switches. Selective reduction of the minority carrier lifetime in the region of the diode was realized by Pt implantation in the diode area followed by an optimized thermal process that limits the lateral diffusion of the metal atoms. Using this metal doping a reduction by a factor of 10 of the reverse recovery charges of the integrated diode is obtained without affecting significantly the current carrying capability of the transistor     

Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory

In this paper, silicon nanocrystals (Si-NCs) fabricated by Chemical Vapor Deposition (CVD) are successfully integrated in a 32 Mb ATMEL NOR Flash memory product, processed in a 130 nm technology platform. Different Si-NC deposition conditions are explored and the threshold voltage distributions of the arrays are correlated to the Si-NC size/dispersion. Main reliability characteristics, as endurance and data-retention after cycling, are studied. Results obtained on large arrays are related to single cell characteristics. The large set of data measured on arrays clearly demonstrates the robustness of our process and integration scheme.     

A new extrapolation law for data-retention time-to-failure ofnonvolatile memories

In this letter, we demonstrate that the commonly assumed Arrhenius law is inconsistent with extrapolation of data-retention time-to-failure of nonvolatile memories in highly accelerated life-tests. We argue that the retention time, namely log(t_H), varies linearly with temperature T rather than with 1/T as commonly assumed, yielding an important reduction in the extrapolated time-to-failure. Extensive experimental results demonstrate the physical consistency of the new model. In particular, data-retention of EPROM devices and leakage current of interpoly dielectric and gate oxide have been investigated over a wide range of temperatures. Finally, it is shown that our model reconciles seemingly controversial activation energy data from the literature     

On the hypergroups with four proper pairs and two or three non-scalar elements

In this paper one continues the study of hypergroups with for proper pairs. In particular one considers the case when the scalars group is not empty and the set of non-scalar elements has size two or three.     

Transport properties of 1T-TaS2-xSex

The electrical resistivity and Hall coefficient of pure and Se-doped 1T-TaS₂ have been measured over the range 1.3<T<250 K to investigate the influence of varying degrees of disorder on the electronic conduction mechanism. Results are consistent with the hypothesis that the anomalous resistivity of this material at low temperatures arises from disorder-enhanced carrier localization.