Degree-regular triangulations of torus and Klein bottle

A triangulation of a connected closed surface is called weakly regular if the action of its automorphism group on its vertices is transitive. A triangulation of a connected closed surface is called degree-regular if each of its vertices have the same degree. Clearly, a weakly regular triangulation is degree-regular. In [8], Lutz has classified all the weakly regular triangulations on at most 15 vertices. In [5], Datta and Nilakantan have classified all the degree-regular triangulations of closed surfaces on at most 11 vertices. In this article, we have proved that any degree-regular triangulation of the torus is weakly regular. We have shown that there exists ann-vertex degree-regular triangulation of the Klein bottle if and only if n is a composite number ≥ 9. We have constructed two distinctn-vertex weakly regular triangulations of the torus for eachn ≥ 12 and a (4m + 2)-vertex weakly regular triangulation of the Klein bottle for eachm ≥ 2. For 12 ≤n ≤ 15, we have classified all then-vertex degree-regular triangulations of the torus and the Klein bottle. There are exactly 19 such triangulations, 12 of which are triangulations of the torus and remaining 7 are triangulations of the Klein bottle. Among the last 7, only one is weakly regular.     

Critical Behavior of Two Interacting Linear Polymer Chains in a Good Solvent

A model of two interacting (chemically different) linear polymer chains is solved exactly using the real-space renormalization group transformation on a family of Sierpinski gasket type fractals and on a truncated 4-simplex lattice. The members of the family of the Sierpinski gasket-type fractals are characterized by an integer scale factorb which runs from 2 to ∞. The Hausdorff dimensiond _F of these fractals tends to 2 from below asb → ∞. We calculate the contact exponenty for the transition from the State of segregation to a State in which the two chains are entangled forb = 2-5. Using arguments based on the finite-size scaling theory, we show that forb→∞, y = 2 - v(b) d _F, wherev is the end-toend distance exponent of a chain. For a truncated 4-simplex lattice it is shown that the system of two chains either remains in a State in which these chains are intermingled in such a way that they cannot be told apart, in the sense that the chemical difference between the polymer chains completely drop out of the thermodynamics of the system, or in a State in which they are either zipped or entangled. We show the region of existence of these different phases separated by tricritical lines. The value of the contact exponenty is calculated at the tricritical points.     

Total electron scattering cross sections for carbon dioxide at low electron energies

Absolute total electron scattering cross sections for carbon dioxide have been measured at low electron energies using a photoelectron source. The measurements have been carried out at 27 electron energies varying from 0.91–9.14 eV with an accuracy of ±3%. The cross sections obtained in the present experiment have been compared with other measurements and theoretical computations.     

InxGa1−xAs (x=0.25–0.35) grown at low temperature

In_xGa_1−xAs (x=0.25–0.35) grown at low temperature on GaAs by molecular beam epitaxy is characterized by Hall effect, transmission electron microscopy, and ultrafast optical testing. As with low temperature (LT) GaAs, the resistivity is generally higher after a brief anneal at 600°C. High-resolution transmission electron microscopy shows all the as-grown epilayers to be heavily dislocated due to the large lattice mismatch (2–3%). When the layers are annealed, in addition to the dislocations, precipitates are also generally observed. As with LT-GaAs, the lifetime shortens as growth temperature is reduced through the range 300–120°C; also, the lifetime in LT-In_xGa_1−xAs is generally shorter in as-grown samples relative to annealed samples. Metal-semiconductor-metal photodetectors fabricated on the material exhibit response times of 1–2 picoseconds, comparable to results reported on GaAs grown at low temperature, and the fastest ever reported in the wavelength range of 1.0–1.3 μm.     

Cut off frequency and transit time analysis of lightly doped drain (LDD) MOSFETs

Analytical model for the transconductance, cut off frequency, transit time and fringing capacitance of LDD MOSFETs is presented with a simple approach. The analysis is carried out considering the LDD device as a conventional MOSFET with a series resistance [Z.-H. Liu et al., Threshold voltage model for submicrometer MOSFETs. IEEE Trans Electron Devices 1993; ED-40: 86–94] and a simple closed form expressions for cut off frequency and transit time is obtained. The total gate capacitance, i.e. the geometric and fringing capacitance, is calculated for both LDD and non-LDD devices and lower fringing capacitance is reported in LDD devices. Lower cut-off frequencies and higher transit time are reported in LDD devices for the same channel length.     

Measurement of storage time, estimation of ion number and study of absorption line profile in a Paul trap

Europium (Eu⁺) ions were confined in a Paul trap and detected by non-destructive method. Storage time of Eu⁺ ions achieved in vacuum was improved by orders of magnitude employing buffer gas cooling. The experimentally detected signal was fitted to the ion response signal and the total number of ions trapped was estimated. It is found that the peak signal amplitude as well as the product of FWHM and the peak signal amplitude is proportional to the total number of trapped ions. The trapped ion secular frequency was swept at different rates and its effect on the absorption line profile was studied both experimentally and theoretically.     

Preparation of MgB<Subscript>2</Subscript>/Fe superconductor wire by electrical self-heating

MgB₂/Fe wires were prepared by electrical self-heating of in situ powder-in-tube wires for the first time at ambient conditions. Characterization of the wires processed at 750 °C, 800 °C and 850 °C for 15 min by XRD, SEM, ϱ–T, susceptibility and J_C measurements shows that the MgB₂ formed is of high quality particularly with respect to phase purity and transport J_C. The method considerably reduces the overall energy consumption vis-à-vis the production cost, simplifies the complexity of the fabrication procedure and is promising for manufacture of high-quality MgB₂ superconducting wires. PACS 74.70.Ad; 74.62.Bf; 74.25.Fy; 74.25.Ha; 81.20.Hy