Investigation of the source/drain asymmetric effects due to gate misalignment in planar double-gate MOSFETs

A planar double-gate SOI MOSFET (DG-SOI) with thin channel and thick source/drain (S/D) was successfully fabricated. Using both experimental data and simulation results, the S/D asymmetric effect induced by gate misalignment was studied. For a misaligned DG-SOI, there is gate nonoverlapped region on one side and extra gate overlapped region on the other side. The nonoverlapped region introduces extra series resistance and weakly controlled channel, while the extra overlapped region introduces additional overlap capacitance and gate leakage current. We compared two cases: bottom gate shift to source side (DG/spl I.bar/S) and bottom gate shift to drain side (DG/spl I.bar/D). At the same gate misalignment value, DG/spl I.bar/S resulted in a larger drain-induced barrier lowering effect and smaller overlap capacitance at drain side than DG/spl I.bar/D. Because of reduced drain-side capacitance, the speed of three-stage ring oscillator of DG/spl I.bar/S, with 20% gate misalignment length (L/sub mis/) over gate length (L/sub g/), or L/sub mis//L/sub g/=20%, was faster than that of two-gate aligned DG-SOI.     

天津通信企业IT信息网络支撑平台

从系统建设背景、关键技术、创新点及应用情况等方面介绍了天津市通信公司企业IT信息网络支撑平台是一个统一、高效、简洁的综合业务网络平台。     

无线技术的新领域--WUSB

无线USB(WUSB)技术是一个全新的无线传输标准.实现USB(通用串行总线)无线化以后,既可以保持有线USB的高速传输等优点,又可以去掉电缆的羁绊,给各种设备带来更大的便捷和移动性.文中首先介绍了WUSB技术的由来--UWB技术规范的标准化难以确定,然后对WUSB技术的规范标准进行了阐述,最后概述了WUSB技术的发展现状及目前和今后的技术研发重点,并对WUSB的发展前景进行了展望.     

弱拓扑和强可容许拓扑之间的一个关系

本文对局部凸空间X及其对偶X′，建立了弱拓扑σ（X，X′）和强拓扑β（X，X′）之间的一个新关系，改进了有关（X，X′）－－可容许拓扑全体上的不变性结果。     

两部美国大学物理教材对我们教学改革的启示

介绍了美国两部大学物理教材的特点，分析了美国教材在教学内容、教学方法、教学手段现代化方面的特色，为我们的教学改革提供一些可供借鉴的经验。     

可压稠密气固两相流动过程的模拟计算

基于稠密气体分子运动论和颗粒动理学,建立可压稠密气固两相流动模型。采用梯度模拟来考虑气相可压缩性对气相湍流的影响。模拟计算表明气固两相射流速度沿轴向和径向减小,颗粒浓度下降。气固两相射流具有高的颗粒温度,呈现强烈的气固两相湍流流动特性。     

CONVERGENCE OF CASCADE ALGORITHMS AND SMOOTHNESS OF REFINABLE DISTRIBUTIONS

In this paper, the author at first develops a method to study convergence of the cascade algorithm in a Banach space without stable assumption on the initial (see Theorem 2.1), and then applies the previous result on the convergence to characterizing compactly supported refinable distributions in fractional Sobolev spaces and Holder continuous spaces (see Theorems 3.1, 3.3, and 3.4). Finally the author applies the above characterization to choosing appropriate initial to guarantee the convergence of the cascade algorithm (see Theorem 4.2).     

基于CAPPFramework的CAPP系统的开发与应用

在国家863CIMS目标产品CAPPFramework系统的基础上，研究了面向对象的信息建模技术、信息模型驱动的所见即所得工艺设计技术、工作流技术．并在此基础上进行集成化、智能化计算机辅助工艺设计(CAPP)的应用与开发，实现了工艺设计的自动化，基本达到了在信息集成基础上的工艺设计与工艺信息管理一体化的目的，对企业的CAPP实施具有一定的参考价值．     

Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction

Terbium-doped Zn_2SiO_4 films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solid-phase reaction method of ZnO and SiO_2. X-ray diffraction (XRD) and UV－Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn_2SiO_4 in wellimite structure. Photoluminescence measurements of the Tb-doped Zn_2SiO_4 films showed two strong emission bands at 490 and 545nm. The photoluminescence lifetime was 4.6ms.