基于二次插值的非饱和土壤水流问题的特征差分方法及数值模拟

本文针对一类非饱和土壤水流问题,提出了基于二次插值的特征差分格式,得到了严谨的L2模误差估计.并作了数值试验,指明方法的有效性.     

Teleportation of an Arbitrary Multipartite GHZ-Class State by One EPR Pair

We present a scheme for perfectly teleporting an arbitrary and unknown N-particle GHZ-class state from a sender to a receiver. We just need one quantum channel composed of two or three particles in the maximally entangled state. The sender performs one Bell-state measurement on two of her particles and N - 1 Hadamard operations and N - 1 yon Neumann measurements on the rest N - 1 particles. The receiver adopts one corresponding unitary transformation on his particles shared with the sender. After that, the receiver can obtain the original N-particle GHZ-class state by introducing N - 1 ancillary particles and carrying out N - 1 controlled-NOT operations. We also generalize the scheme to the case of controlled teleportation.     

用板式电势差计测量电池的电动势和内阻实验的改进

分析了在“用板式电势差计测量电池的电动势和内阻”实验中 ,由于待测干电池的电动势和内阻在实验过程中均不为恒定值而引起的误差 ,依据电化学理论和电阻构成解释了实验现象 ,并给出了实验改进方案 .     

局部有限超拓扑的局部紧性

本文讨论了赋予局部有限拓扑的非空闲子集超空间的局部紧性.主要结果是:X正则,则其闭子集超空间局部紧当且仅当X可表示成一个紧空间与一个离散空间的拓扑和.     

如何加强信号路径的性能

信号路径的设计为系统设计工程师提供不少可供他们发挥的机会.以设有模拟/数字转换器的信号路径为例来说,工程师进行设计时不但要为传感器提供缓冲,而且还要解决模拟/数字转换器开关电容的输入充电问题,以及要尽量减少系统的噪音源,只要构思的设计能解决这些问题,便可大幅提升系统的性能.今期的信号路径设计专辑将会深入讨论这方面的问题.     

红外多元探测器的噪声仿真研究

分析了红外多元探测器的噪声来源，建立各种噪声的公式。并以“L”型探测器为例分析其噪声的信号形式有三种：白噪声、正弦噪声、分形噪声。采用MATLAB语言对分析结果进行了仿真。     

轴流泵端壁区域流动三维粘性数值计算

本文采用通用流场分析软件FLUENT,基于N-S方程,选用RNG κ—ε湍流模型与SIMPLEC算法,对轴流泵叶轮内部(及端壁间隙)流动进行了三维粘性数值计算。通过实验验证,表明数值计算结果和实测数据吻合较好。详细分析了叶顶附近流场形态以及叶轮出口轴向、周向速度分布,进行了性能预估。并给出了实验装置图。     

A New Pathway to Synthesize Cyclomercurated Ferrocenylimines Containing Heterocyclic Ring

The cyclomercurated ferrocenylimines containing heterocyclic ring were prepared by the condensation of cyclomercuration of acylferrocene with the appropriate heterocyclic amine.This procedure provides an efficient method for the synthesis of cyclomerucurated ferrocenylimines containing heterocyclic ring which are difficultly synthesized by the conventional method.The reaction mechanism is proposed.     

GaN材料系列的研究进展

ＧａＮ及其合金作为第三代半导体材料具有一系列优异的物理和化学性质，在光电子器件，高温大功率电子器件及高频微波器件应用方面具有广阔的前景，已成为当前高科技领域的研究重点，论述了这种材料的研究历史与发展现状，物理与化学性质，薄膜的生长方法及在光学电子和微电子器件应用于方面的研究进展。     

Effect of epitaxial realignment on the leakage behavior of arsenic-implanted,as-deposited polycrystalline Si-on-single crystal Si diodes

When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.