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121.
Su-Yun Huang Chuhsing Kate Hsiao Ching-Wei Chang 《Annals of the Institute of Statistical Mathematics》2003,55(3):655-670
The article provides a refinement for the volume-corrected Laplace-Metropolis estimator of the marginal likelihood of DiCiccioet al. The correction volume of probability α in DiCiccioet al. is fixed and suggested to take the value α=0.05. In this article α is selected based on an asymptotic analysis to minimize
the mean square relative error (MSRE). This optimal choice of α is shown to be invariant under linear transformations. The
invariance property leads to easy implementation for multivariate problems. An implementation procedure is provided for practical
use. A simulation study and a real data example are presented. 相似文献
122.
For the minimal surfaces in Rn with Plateau boundary condition and establish the global existence and uniqueness of the flow as well as the continuous dependence of the initial datum. 相似文献
123.
Johnson R.A. de la Houssaye P.R. Chang C.E. Pin-Fan Chen Wood M.E. Garcia G.A. Lagnado I. Asbeck P.M. 《Electron Devices, IEEE Transactions on》1998,45(5):1047-1054
This paper reviews the prospects of thin-film silicon-on-sapphire (TFSOS) CMOS technology in microwave applications in the 1-5 GHz regime and beyond and presents the first demonstration of microwave integrated circuits based on this technology, MOSFET's optimized for microwave use, with 0.5-μm optically defined gate lengths and a T-gate structure, have ft values of 25 GHz (14 GHz) and fmax values of 66 GHz (41 GHz) for n-channel (p-channel) devices and have noise figure values below 1 db at 2 GHz, some of the best reported performance characteristics of any silicon-based MOSFET's to date. On-chip spiral inductors exhibit quality factors above ten. Circuit performance compares favorably with that of other CMOS-based technologies and approach performance levels similar to those obtained by silicon bipolar technologies. The results demonstrate the significant potential of this technology for microwave applications 相似文献
124.
Feasibility of adding a personal communications network to anexisting fixed-service microwave system
Ywh-Ren Tsai Jin-Fu Chang 《Communications, IEEE Transactions on》1996,44(1):76-83
This paper examines the feasibility of adding a personal communication network (PCN) to a frequency band which is already allocated to fixed-service microwave systems. To achieve this goal, spread spectrum techniques are used to spread narrowband PCN signals into wideband. The forward and reverse link performance of PCN users under the influence of the microwave system and the influence of PCN users on the microwave system are both examined. It is proven that spectrum sharing between the PCN network and microwave systems is indeed feasible. Although our analysis is done based upon the consideration of only one microwave system, it can be easily extended to allow the appearance of two or more microwave systems 相似文献
125.
Tae Geun Kim Kyung Hyun Park Sung-Min Hwang Yong Kim Eun Kyu Kim Suk-Ki Min Si-Jeong Leem Jong-Il Jeon Jung-Ho Park Chang W.S.C. 《Quantum Electronics, IEEE Journal of》1998,34(8):1461-1468
GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations, n-blocking on p-substrate (VIPS), p-n-p-n blocking on n-substrate (VI(PN)nS) and p-blocking on n-substrate (VINS) have been fabricated and characterized. The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 mm, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 mm/mA, and the temperature tuning rate was measured to be 0.14 nm/°C. Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here 相似文献
126.
Wen-Jen Ho Wen-Thong Chang 《Electronics letters》1998,34(5):433-434
A multi-layer multigrid algorithm for curve fitting in the wavelet domain is presented. This algorithm is achieved by applying a wavelet transform to each grid of the conventional multigrid structure. Using a wavelet transform, the convergent rate in each grid is improved and the total system can converge more quickly 相似文献
127.
提出了一种用于修正光学神经网络硬件系统误差的虚拟神经网络模型,光学实验结果表明该网络能够有效地消除硬件系统误差对实验结果的影响。 相似文献
128.
Kow Ming Chang Yuan Hung Chung Gin Ming Lin 《Electron Device Letters, IEEE》2002,23(5):255-257
Studies the anomalous variations of the OFF-state leakage current (IOFF) in n-channel poly-Si thin-film transistors (TFTs) under static stress. The dominant mechanisms for the anomalous IOFF can be attributed to (1) IOFF increases due to channel hot electrons trapping at the gate oxide/channel interface and silicon grain boundaries and (2) IOFF decreases due to hot holes accumulated/trapped near the channel/bottom oxide interface near the source region. Under the stress of high drain bias, serious impact ionization effect will occur to generate hot electrons and hot holes near the drain region. Some of holes will be injected into the gate oxide due to the vertical field (~(V_Gstress V_Dstress)/T OX) near the drain and the others will be migrated from drain to source along the channel due to lateral electric field (~V_Dstress/LCH) 相似文献
129.
Wang K.-C. Beccue S.M. Chang M.-C.F. Nubling R.B. Cappon A.M. Tsen T.C.-T. Chen D.M. Asbeck P.M. Kwok C.Y. 《Solid-State Circuits, IEEE Journal of》1992,27(10):1372-1378
A novel logic approach, diode-HBT logic (DHL), that is implemented with GaAlAs/GaAs HBTs and Schottky diodes to provide high-density and low-power digital circuit operation is described. This logic family was realized with the same technology used to produce emitter-coupled-logic/current-mode-logic (ECL/CML) circuits. The logic operation was demonstrated with a 19-stage ring oscillator and a frequency divider. A gate delay of 160 ps was measured with 1.1 mW of power per gate. The divider worked properly up to 6 GHz. Layouts of a DHL flip-flop and divider showed that circuit area and transistor count can be reduced by about a factor of 3, relative to ECL/CML circuits. The new logic approach allows monolithic integration of high-speed ECL/CML circuits with high-density DHL circuits with high-density DHL circuits 相似文献
130.
H.C. Kuo Y.H. Chang H.H. Yao Y.A. Chang F.-I. Lai M.Y. Tsai S.C. Wang 《Photonics Technology Letters, IEEE》2005,17(3):528-530
1.27-/spl mu/m InGaAs: Sb-GaAs-GaAsP vertical-cavity surface-emitting lasers (VCSELs) were grown by metal-organic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than /spl sim/35% as the temperature raised from room temperature to 70/spl deg/C. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of /spl sim/5.25 GHz/(mA)/sup 1/2/. These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25/spl deg/C to 70/spl deg/C. 相似文献