PuN基态分子势能函数与热力学函数的理论计算

在Pu的相对论有效原子实势近似和N原子 6 - 311G 全电子基函数下 ,用密度泛函B3LYP方法计算得到PuN分子基态X6Σ+ 的结构与势能函数、力常数与光谱数据 .同时计算得到PuN(g)分子在 2 98K时的标准生成热力学函数ΔfH0 、ΔS0 和ΔfG0 ,分别为 - 4 87.2 39kJ/mol、95 .345J/molK和 - 5 15 .6 6 6 1kJ/mol.     

WEIERSTRASS REPRESENTATION FORSURFACES WITH PRESCRIBED NORMALGAUSS MAP AND GAUSS CURVATURE IN H~3

The author obtains a Weierstrass representation for surfaces with prescribed normal Gauss map and Gauss curvature in H3. A differential equation about the hyperbolic Gauss map is also obtained, which characterizes the relation among the hyperbolic Gauss map, the normal Gauss map and Gauss curvature. The author discusses the harmonicity of the normal Gauss map and the hyperbolic Gauss map from surface with constant Gauss curvature in H3 to S2 with certain altered conformal metric. Finally, the author considers the surface whose normal Gauss map is conformal and derives a completely nonlinear differential equation of second order which graph must satisfy.     

电力调度自动化系统实用化应用

介绍了县级电网调度自动化系统的实用化应用，包括系统结构，功能特点以及保证系统安全运行的技术经验．     

Crystallographic report: Bis(norfloxacin)dilead(II) tetranitrate, [Pb2(H‐Norf)2(ONO2)4]

The centrosymmetric binuclear structure of [Pb₂(H‐Norf)₂(ONO₂)₄]shows the geometry around each lead(II) atom to be distorted trigonal bipyramidal with Pb–O distances ranging from 2.357(3) to 2.769(4) Å. Copyright © 2003 John Wiley & Sons, Ltd.     

Thermal conductance for single wall carbon nanotubes

We report a theoretical analysis of the phonon thermal conductance, κ(T), for single wall carbon nanotubes (SWCN). In a range of low temperatues up to 100 K, κ(T) of perfect SWCN is found to increase with temperature, approximately, in a parabolic fashion. This is qualitatively consistent with recent experimental measurements where the tube-tube interactions are negligibly weak. When the carbon-carbon bond length is slightly varied, κ(T) is found to be qualitatively unaltered which implies that the anharmonic effect does not change the qualitative behavior of κ(T). Received 12 June 2001     

大学物理实验教学改革的实践与思索

本主要介绍了我校近年来在大学物理实验课程体系和教学内容改革的实践及下一步改革的思路。     

电感耦合等离子体原子发射光谱法测定化妆品中砷、铅、汞

本文采用五氧化二钒作催化剂，HNO3－H2SO4消解法对化妆品前处理后，用电感耦合等离子体发射光谱仪同时测定砷，铅，汞，方法简便，快速，回收率在95％－103．5％之间，相对标准偏差不大于3％。     

Hilbert空间上线性算子的Drazin可逆性

主要研究了Hilbert空间上两个Drazin可逆算子和的Drazin可逆性.同时,对上三角算子矩阵的Drazin可逆性也给出了详细的讨论.     

The Monitoring System Using FOBG Sensor for The Health of the Rocket

A novel heath monitoring system of the rocket based on fiber optic Bragg gratings is brought forward, its component units and working principle are also described.     

Stress distribution on [100] Si wafer mapped by novel I-V analysis of MOS tunneling diodes

The current-voltage (I-V) characteristics of metal-oxide-semiconductor tunneling diodes distributed over a 3-in Si wafer were analyzed to investigate the stress distribution on the wafer. Generally, the substrate injection saturation current (J/sub sat/) decreases as the gate injection leakage current (J/sub g/) increases, the latter being dominated by oxide thickness via a trap related mechanism. A universal curve to fit all analyzed data was found and it is suggested that devices with extremely high (low) J/sub sat/ at a given J/sub g/ should be located in areas of the silicon lattice with relatively high external compressive (tensile) stress because of the stress-induced bandgap variation effect. The mapped locations of the highly stressed devices on a 3-in [100] Si wafer correspond to the patterns of slips caused by thermal stress during rapid thermal processing, as described in previous reports.