激光对改变胰岛致免疫性的影响

新生猪胰岛样细胞团经准分子激光照射预处理后，其免疫原性明显降低，表明经激光预处理，有可能延长移植物存活时间。     

COMPLETE EIGEN-SOLUTIONS FOR ANTI-PLANE NOTCHES WITH MULTI-MATERIALS BY SUPER-INVERSE ITERATION

In this paper,the super-inverse iterative method is proposed to compute the accurateand complete eigen-solutions for anti-plane cracks/notches with multi-materials,arbitrary opening an-gles and various surface conditions.Taking the advantage of the knowledge of the variation forms ofthe eigen-functions,a series of numerical techniques are proposed to simplify the computation andspeed up the convergence rate of the inverse iteration.A number of numerical examples are given todemonstrate the excellent accuracy,efficiency and reliability of the proposed approach.     

高阶非线性波动方程的有限差分方法

本文研究一类广泛的高阶非线性波动方程组初边值问题的有限差分格式，用离散泛函分析方法和先验估计的技巧得到了有限差分格式的收敛性。     

四个麦芽品质性状的杂种优势和相关分析

本文对四个主要麦芽品质性状—a一淀粉酶活力、麦芽汁粘度、麦芽汁色度和搪化力进行了杂种优势和相关分析.(1)相对优势结果表明，在84个组合次中，呈正向优势的46个，占54.76男，负向优势34个，占40.48男，无显性4个，占4.75男;(2)四个品质性状的中亲优势平均值分别为一6.117、一9.965 40.452和一。.545s a-淀粉酶活力和糖化力的超高亲优势分别为一14.578和一8.201,麦芽汁粘度和色度的超低亲优势分别为5.442和70.455.四个性状杂种优势的变异系数均很大.(3)麦芽汁色度的F，对MP的回归系数(B)和相关系数(r)均达显著水平，分别为。..43和0.50，麦芽汁粘度的相关系数达显著水平，为一。.45,其余均未达显著水平，(4)除麦芽汁色度性状外，另三个性状的中亲优势、超亲优势和特殊配合力的相关均达显著或极显著水平.(5)四个麦芽品质性状间的相关结果表明，仅有a-淀粉酶活力和麦芽汁粘度间呈极显著负相关(r=一0.56').最后，文章根据实验结果，就啤酒大麦麦芽品质改良的遗传育种及其杂种优势应用进行了初步讨论.     

几种新型多波长光纤激光器

综合报道几种新型多波长光纤激光器 ,并对这些激光器的机理、实验装置和研究结果进行了详细介绍 ,对今后多波长激光器的发展方向作一展望。     

Minimum entropy and information measure

Kapur et al. (1995) introduced the MinMax information measure, which is based on both maximum and minimum entropy. The major obstacle for using this measure, in practice, is the difficulty in finding the minimum entropy. An analytical expression has already been developed for calculating the minimum entropy when only variance is specified. An analytical formula is obtained for calculating the minimum entropy when only mean is specified, and numerical examples are given for illustration     

4- and 13-GHz tuned amplifiers implemented in a 0.1-μm CMOStechnology on SOI, SOS, and bulk substrates

Four- and 13-GHz tuned amplifiers have been implemented in a partially scaled 0.1-1 μm CMOS technology on bulk, silicon-on-insulator (SOI), and silicon-on-sapphire (SOS) substrates. The 4-GHz bulk, SOI, and SOS amplifiers exhibit forward gains of 14, 11, and 12.5 dB and F_min's of 4.5 (bulk) and 3.5 db (SOS). The 13-GHz SOS and SOI amplifiers exhibit gains of 15 and 5.3 dB and F_unn's of 4.9 and 7.8 dB. The 4-GHz bulk amplifier has the highest resonant frequency among reported bulk CMOS amplifiers, while the 13-GHz SOS and SOI amplifiers are the first in a CMOS technology to have tuned frequencies greater than 10 GHz. These and other measurement results suggest that it may be possible to implement 20-GHz tuned amplifiers in a fully scaled 0.1-1 μm CMOS process     

关于正形置换多项式的注记

n为正整数，m为大于1的正整数，本文证明了当n≡0，1（mod m）时，F2^n上不存在2^m-1次正形置换多项式，并给出了该结果的几个推论：F2^n上不存在次数为3的正形置换多项式；n〉2时，F2^n上的4次正形置换多项式都是仿射多项式．     

Anomalous variations of OFF-State leakage current in poly-Si TFTunder static stress

Studies the anomalous variations of the OFF-state leakage current (I_OFF) in n-channel poly-Si thin-film transistors (TFTs) under static stress. The dominant mechanisms for the anomalous I_OFF can be attributed to (1) I_OFF increases due to channel hot electrons trapping at the gate oxide/channel interface and silicon grain boundaries and (2) I_OFF decreases due to hot holes accumulated/trapped near the channel/bottom oxide interface near the source region. Under the stress of high drain bias, serious impact ionization effect will occur to generate hot electrons and hot holes near the drain region. Some of holes will be injected into the gate oxide due to the vertical field (~(V_Gstress V_Dstress)/T _OX) near the drain and the others will be migrated from drain to source along the channel due to lateral electric field (~V_Dstress/L_CH)     

二阶Melnikov函数及其应用

在Ｍｅｌｎｉｋｏｖ函数的种种应用中，目前常见到的仅是一阶形式。本文具体推导了二阶Ｍｅｌｎｉｋｏｖ函数的分析表达，提出了临界情况下考察双曲鞍点的稳定流形与不稳定流形相对位置的二阶判据，并成功地用于环面ｖａｎｄｅｒＰｏｌ方程的研究中。