We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel. 相似文献
We investigate terahertz radiation(T-rays) from a pentacene organic diode at room temperature. The quantum chemistry calculation for frequency-related Huang–Rhys factor of pentacene is also carried out. The results demonstrate that the T-rays can come from a bending vibration of pentacene skeleton after the energy of pentacene exciton transferring to the vibrational excited state via electron–phonon coupling. Frequency and natural bond orbital analytics of pentacene and its derivatives are performed in order to explain the result and develop new materials to get higher emission. This work provides a new way to produce T-rays with a simple device at room temperature. 相似文献
As per the most recent literature, Orthogonal Frequency Division Multiplexing (OFDM), a multi access technique, is considered most suitable for the 3G, 4G and 5G techniques in high speed wireless communication. What made OFDM most popular is its ability to deliver high bandwidth efficiency and superior data rate. Besides it, high value of peak to average power ratio (PAPR) and Inter Carrier Interference (ICI) are the challenges to tackle down via appropriate mitigation scheme. As a research contribution in the present work, an improved self-cancellation (SC) technique is designed and simulated through Simulink to mitigate the effect of ICI. This novel proposed technique (Improved SC) is designed over discrete wavelet transform (DWT) based OFDM and compared with conventional SC scheme over different channel conditions i.e. AWGN and Rayleigh fading environments. It is found that proposed DWT-OFDM with Improved SC scheme outperforms conventional SC technique significantly, under both AWGN and Rayleigh channel conditions. Further, in order to justify the novelty in the research contribution, a Split-DWT based Simulink model for Improved SC scheme is investigated to analyse the BER performance. This Split-DWT based Simulink model presented here foretells the future research potential in wavelet hybridization of OFDM to side-line ICI effects more efficiently.
Journal of Thermal Analysis and Calorimetry - The fire behavior of one flame-retardant PVC cable used as building wire is investigated in this work. Bench scale tests were performed using a cone... 相似文献