Synthesis, Structure and Conductivity of the New Charge-transfer Salt (ET)_2(CH_2=CH-CH_2-SO_3)·H_2O

ET is one of the most famous electron-donor molecules, which forms charge-transfer complexes (abbr. CT-complexes) with various types of counterions. These complexes have received intense attention because a wide range of physical properties such as conductivity and superconductivity1, ferromagnetism2-4 and nonlinear optical properties5 was found in these materials. Although the majority of the ET-based CT-complexes were prepared by combining with inorganic counterions, CT-complexes with o…     

Synthesis of 2-(α-Hydroxyalkyl)-2-Oxazoline under Microwave Irradiation in Bluk

Four 2-(α-hydroxyalkyl)-2-oxazolines and a 2-(α-hydroxy-α,α-diphenyl)-2-benzooxazole were synthesized from β-amimoalcohols and α-hydroxy carboxylic acids under microwave irradiation in the absence of a solvent.     

Ring-opening reactions of arylvinylidenecyclopropanes with diaryl diselenide upon heating: formation of 1,2-diarylselenocyclopentene derivatives

Arylvinylidenecyclopropanes undergo a novel reaction upon heating at 150 °C with diaryl diselenide to give the corresponding 1,2-diarylselenocyclopentene derivatives in good to high yields within 1.5 h. The further transformation of 1,2-diarylselenocyclopentene derivatives has been disclosed.     

Selective wet etching of p-GaN for efficient GaN-based light-emitting diodes

The selective wet etching of a p-GaN layer by using a solution of KOH in ethylene glycol (KE) was studied to enhance the optical and electrical performance of the GaN-based light-emitting diodes (LEDs). The surface of the p-GaN, which was selectively etched in the KE solution, showed hexagonal-shaped etch pits. The light-output power of etched LEDs was improved by 29.4% compared to that of the nonetched LED. This improvement was attributed to the increase in the probability of photons to escape due to the increased surface area of textured surface and the reduction in contact resistance of the ohmic layer resulting from the increased contact area and hole concentration on the textured p-GaN. The reverse leakage current of the LED was also greatly decreased due to the surface passivation and the removal of defective regions from the p-GaN.     

实例推理在光学加工参数优化中的研究与应用

为解决光学加工CCOS模型固有的缺陷,将实例推理CBR引入到光学加工中.给出了CBR中光学加工实例的具体表达形式,并对CBR系统中的关键技术一一匹配算法,即相似度的求解进行详细的说明,在此基础上,建立了CBR原型系统.实践证明,该系统运行良好.     

应用C++ Builder实现实时数据采集、显示的方法

集散控制系统中数据的实时采集和显示是较重要和较难实现的问题。文中针对一个自行设计的集散控制系统,介绍了在W Iindows操作系统下,利用可视化编程语言C Builder中的时间控件Ttimer完成定时作用,产生实时时间信号直接触发处于后台运行的程序,实现生产现场中数据的实时采集和数据动态显示。所用程序由可视化编程语言C Builder编写,给出了相应的程序。     

基于小波变换的在役管线漏磁信号的去噪

采用漏磁法对在役管线进行无损检测时,所采集的信号中含有大量的噪声需要去除。文中介绍了小波变换的基本理论及检测信号和噪声信号在小波变换下的特性,说明了去除漏磁信号噪声的原理。在仿真试验中采用二阶双正交样条小波为小波函数,选用软硬阈值折中法和自适应阈值处理小波系数,结果表明将小波变换应用于在役管线漏磁检测中,能很好地去除噪声,提取出有用信号。     

抗高重频激光有源干扰的方案研究

在对激光末制导武器的抗干扰现状分析的基础上,对高重频干扰进行了分析,提出了抗高重频激光有源干扰的方案.该方案将高重频干扰建立数学模式后,对该数学模式进行分析,总结出该模型的规律,从而判断出高重频周期,该原理将构成方案的核心思想.该高重频信号处理方案的关键点,包括高重频周期的测定和反向高重频信号同步点的确定.该方案将有效的消除高重频有源干扰,和我们曾提出过的激光末制导炮弹武器系统的一类新型激光编码方案,构成了完备的激光末制导武器系统抗激光有源干扰方案.     

Cs(6P)激发态的辐射及与Ne碰撞的能量转移

应用激光吸收和荧光方法,测量了Cs(6P)态与Ne碰撞的精细结构转移和碰撞猝灭截面.Cs原子被激光激发到6P3/2态,将与泵浦激光束反向平行的检测激光束调到6PJ→8S1/2的跃迁,测量6PJ激发态的密度及空间分布,由此计算了6PJ→6S的有效辐射率.在T=337 K和Ne密度0.5×1018＜N＜4×1018cm-3范围内测量了6P1/2→6S1/2(895 nm)发射的敏化荧光强度I895,量N/I895与N有抛物线型的关系,表明6PJ的猝灭是由于与Ne原子的碰撞产生的,而不是由与Cs基态原子碰撞产生的.由最小二乘法确定的二次多项式的系数得到6P态与Ne碰撞精细结构转移截面σ21=(1.90±0.82)×10-19 cm2,猝灭截面σD=(8.97±3.85)×10-19 cm2.