谱任意的符号模式矩阵

一个n阶符号模式矩阵A称为是谱任意的,如果对任意的实系数n次首1多项式r(x),在A的定性矩阵类Q(A)中至少存在一个实矩阵B,使得B的特征多项式是r(x),文中证明了当n为奇数时n阶谱任意符号模式矩阵是存在的。     

The Effects of Scaling and Bias Configuration on Operating-Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits

This paper presents a comprehensive picture of operating-voltage constraints in SiGe heterojunction bipolar transistors, addressing breakdown-related issues as they relate to technology generation, bias configuration, and operating-current density. New definitions for breakdown voltage, adopted from standard measurements, are presented. Practical design implications and physical origins of breakdown are explored using calibrated 2-D simulations and quasi-3-D compact models. Device-level analysis of ac instabilities and power performance, which is relevant to mixed-signal circuit design, is presented, and implications of the relaxed voltage constraints for common-base operation are explored.     

非晶硅薄膜的低温快速晶化及其结构分析

在镀铝的廉价玻璃衬底上高速沉积的非晶硅薄膜在不同的温度下退火10min.退火温度为500℃时,薄膜表面形成了硅铝的混合相,非晶硅薄膜开始呈现了晶化现象 退火温度为550℃时,大部分(约80%)的非晶硅晶化为多晶硅,平均晶粒尺寸为500nm 退火温度为600℃时,几乎所有的非晶硅都转化为多晶硅,其平均晶粒尺寸约为15μm.     

电子束光刻中的辐照损伤

本文研究了电子束光刻中电子能量(10—30keV)和电荷剂量(10~(-6)—10~(-3)C·cm~(-2))对铝栅MOS电容器的损伤和低温退火(<500℃)的影响。研究电子束光刻中高能量(30keV)和高剂量(10~(-3)C·cm~(-2))电子束引起的损伤,对电子束汽相显影光刻和电子束无显影光刻是有实际意义的。实验表明,平带电压的损伤可高达十几伏,界面态密度可高达10~(12)cm~(-2)eV~(-1)以上。在一定电荷剂量下,平带电压的损伤对电子能量的变化(在一定范围内)不敏感。在一定电子能量下,界面态密度的损伤对电荷剂量的变化(在一定范围内)不敏感。低温(<500℃)退火能完全消除平带电压的损伤,但不能完全消除界面态密度的损伤。     

Effect of end groups on complexation kinetics between cyclodextrins and guest polymers

α‐Cyclodextrin (α‐CD) has been complexed with various poly(ethylene glycol) (PEG) derivatives in aqueous solution. It has been found that the end groups of PEG derivatives affect the complexation kinetics greatly, but have only a little influence on the thermodynamic behavior. By increasing the hydrophobicity of end groups, the complexation speeds up rapidly. On the other hand, the bulky end groups slow down the threading of polymeric guests into the cavity of CD. By changing the hydrophobicity and the size of end groups, the complexation rate can be adjusted in the range of several orders of magnitudes, which should be quite useful in the design of new supramolecular systems. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2050–2057, 2006     

Integral-Type Darboux Transformations for the mKdV Hierarchy with Self-Consistent Sources

We present integral-type Darboux transformation for the mKdV hierarchy and for the mKdV hierarchy withself-consistent sources. In contrast with the normal Darboux transformation, the integral-type Darboux transformationscan offer non-auto-Backlund transformation between two (2n 1)-th mKdV equations with self-consistent sources withdifferent degrees. This kind of Darboux transformation enables us to construct the N-soliton solution for the mKdVhierarchy with self-consistent sources. We also propose the formulas for the m times repeated integral-type Darbouxtransformations for both mKdV hierarchy and mKdV hierarchy with self-consistent sources.     

相对论平均场理论对196Pb超形变态的研究

在形变约束的相对论平均场理论框架下, 用TMA, PK1, NL3和NL-SH相互作用对¹⁹⁶Pb的超形变态进行了系统研究. 给出了¹⁹⁶Pb的位能曲线、基态和超形变态的形变以及超形变态退激的激发能. ¹⁹⁶Pb的基态为β₂≈－0.15的扁椭球, 超形变激发态为β₂≈0.60的长椭球, 激发能在4－5MeV之间, 势阱深度在1－2.2MeV之间. 这些结果与最近观测的实验数据符合得非常好, 表明相对论平均场理论能够较好地描述¹⁹⁶Pb超形变转动带带首的能量.     

非均匀散射层矢量辐射传输(VRT)方程高阶散射解的迭代法

将散射介质层在z轴方向划分成薄层，用薄层的一阶散射强度、Fourier变换和迭代方法求解散射介质整层的矢量辐射传输(VRT)方程的高阶散射解.该方法将一阶散射与高阶散射迭代结合起来，计算公式简明，可计算高阶迭代解，计算时间少.计算结果与一层均匀散射介质的VRT方程一阶Mueller矩阵解、半空间均匀散射介质二阶Mueller矩阵解、以及离散坐标-特征值特征矢量法的VRT热辐射的数值解作了全面的比较.提出并讨论了非均匀散射层主动与被动VRT方程的高阶解.本计算程序可以通用于非球形粒子多层结构及非均匀介质的散射和热辐射计算. 关键词： VRT方程 分层 迭代解     

水力机械内鲤鱼草鱼的压力损伤模拟试验

通过试验人工模拟水力机械内压力变化过程,测量压力时间变化,观察并解剖分析不同压力变化过程对鲤鱼和草鱼造成损伤的情况。试验发现,负压状态下的压力变化过程会对鱼的生存构成直接威胁,并得到了新型环保水力机械设计中应采用的压力时变导数极限值。