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31.
We predict that, for wavelength division multiplexing optical-network applications, an asymmetrically dilated configuration of a 2×2 cross-connect is significantly better in terms of overall crosstalk when the levels of the bar-port crosstalk and the cross-port crosstalk are significantly different from each other, as is the case with optical-frequency filters which utilize grating-assisted coupling. As a verification, we present a simulation study with 2×2 polarization-diversified acousto-optic tunable filters. We present a recursive method to extend the principle of asymmetric dilation to larger-size cross-connect switches, and make a recommendation for an asymmetrically dilated 4×4 cross-connect configuration 相似文献
32.
Neviani A. Meneghesso G. Zanoni E. Hafizi M. Canali C. 《Electron Device Letters, IEEE》1997,18(12):619-621
Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient αn in In0.53Ga0.47As at medium-low electric fields are reported for the first time. The increase of αn with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In0.53Ga 0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In0.53Ga 0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current 相似文献
33.
This paper presents the design criteria, procedure, and implementation of a soft-switched power-factor-correction (PFC) circuit based on the extended-period quasi-resonant (EPQR) principles. All power electronic devices including switches and diodes in the circuit are fully soft switched. The design method is demonstrated in a prototype circuit. The operating principles are confirmed with computer simulation and experimental results. A comparison of the EP-QR operation and zero-voltage-transition (ZVT) pulse-width modulation (PWM) method 相似文献
34.
35.
Fahmy H.I. Develekos G. Douligeris C. 《Selected Areas in Communications, IEEE Journal on》1997,15(2):226-237
Communication network design is becoming increasingly complex, involving making networks more usable, affordable, and reliable. To help with this, we have proposed an expert network designer (END) for configuring, modeling, simulating, and evaluating large structured computer networks, employing artificial intelligence, knowledge representation, and network simulation tools. We present a neural network/knowledge acquisition machine-learning approach to improve the END's efficiency in solving the network design problem and to extend its scope to acquire new networking technologies, learn new network design techniques, and update the specifications of existing technologies 相似文献
36.
Single-phase voltage source power converters (VSCs) under consideration are AC-DC current-controlled boost-type power converters with bidirectional power-handling capability. Equivalence between two series-connected two-level power converters and a single three-level power converter is considered here. Further considered is the series operation of three-level power converters. Simulation results and experimental verification for both are provided. Economical configurations of three-level power converters leading to multilevel waveforms are presented thereafter 相似文献
37.
Cresswell M.W. Allen R.A. Guthrie W.F. Sniegowski J.J. Ghoshtagore R.N. Linholm L.W. 《Semiconductor Manufacturing, IEEE Transactions on》1998,11(2):182-193
The physical widths of reference features incorporated into electrical linewidth test structures patterned in films of monocrystalline silicon have been determined from Kelvin voltage measurements. The films in which the test structures are patterned are electrically insulated from the bulk-silicon substrate by a layer of silicon dioxide provided by SIMOX (Separation by the IMplantation of OXygen) processing. The motivation is to facilitate the development of linewidth reference materials for critical-dimension (CD) metrology-instrument calibration. The selection of the (110) orientation of the starting silicon and the orientation of the structures' features relative to the crystal lattice enable a lattice-plane-selective etch to generate reference-feature properties of rectangular cross section and atomically planar sidewalls. These properties are highly desirable for CD applications in which feature widths are certified with nanometer-level uncertainty for use by a diverse range of CD instruments. End applications include the development and calibration of new generations of CD instruments directed at controlling processes for manufacturing devices having sub-quarter-micrometer features 相似文献
38.
For part I see, ibid., p. 134, 1998. The basic approach outlined in the previous article is applied to the difficult problem of computing the optical modes of a vertical-cavity surface-emitting laser. The formulation utilizes a finite difference equation based upon the lowest order term of an infinite series solution of the scalar Helmholtz equation in a local region. This difference equation becomes exact in the one-dimensional (1-D) limit, and is thus ideally suited for nearly 1-D devices such as vertical-cavity lasers. The performance of the resulting code is tested on both a simple cylindrical cavity with known solutions and an oxide-confined vertical-cavity laser structure, and the results compared against second-order-accurate code based upon Crank-Nicolson differencing 相似文献
39.
A novel class of narrow-band tunable wavelength filters is proposed and evaluated. Wavelength selectivity of the proposed filters Is derived from the finite time response of an optical nonlinearity. The nonlinearity is gain saturation in semiconductor optical amplifier structures. The filters are shown to have very narrow passbands tunable over the entire semiconductor gain bandwidth. The key to filter implementation is a device configuration in which the wave-mixing products can be isolated from the amplified inputs. Three integrated optics compatible configurations are considered and shown to have high filter throughputs 34 to 180% and subangstrom bandwidths 相似文献
40.
A fiber optic ring network, such as fiber distributed data interface (FDDI), can be operated over multiple wavelengths on its existing fiber plant consisting of point-to-point fiber links. Using wavelength division multiplexing (WDM) technology, FDDI nodes can be partitioned to operate over multiple subnetworks, with each subnetwork operating independently on a different wavelength, and inter-subnetwork traffic forwarding performed by a bridge. For this multiwavelength version of FDDI, which we refer to as wavelength distributed data interface (WDDI), we examine the necessary upgrades to the architecture of a FDDI node, including its possibility to serve as a bridge. The main motivation behind this study is that, as network traffic scales beyond (the single-wavelength) FDDI's information-carrying capacity, its multiwavelength version, WDDI, can gracefully accommodate such traffic growth. A number of design choices exist in constructing a good WDDI network. Specifically, we investigate algorithms using which, based on prevailing traffic conditions, partitioning of nodes into subnetworks can be performed in an optimized fashion. Our algorithms partition the nodes into subrings, such that the total traffic flow in the network and/or the network-wide average packet delay is minimized 相似文献