Widely tunable bottom-emitting vertical-cavity SOAs

We present bottom-emitting tunable vertical-cavity semiconductor optical amplifiers (VCSOAs) with an effective wavelength tuning range of >20 nm. These devices utilize a high reflectivity micromechanically tunable Bragg mirror as the back reflector. Compared with our first generation tunable VCSOAs, the bottom-emitting devices exhibit a two-fold increase in the effective tuning range as well as a five-fold reduction in the required tuning voltage.     

Novel T-rail electrodes for substrate removed low-voltage high-speed GaAs/AlGaAs electrooptic modulators

A novel traveling-wave electrode utilizing capacitively loaded T-rail elements was developed for low-voltage high-speed substrate-removed GaAs/AlGaAs electrooptic modulators. Electrodes with varying dimensions were fabricated and characterized. Electrode phase velocity, characteristic impedance, loss coefficient, and capacitive loading were extracted from the measured s-parameters up to 40 GHz. Electrode was also simulated using a finite-element solver. The measured and calculated electrode capacitance values were found to be in excellent agreement, showing that the electrode can be precisely designed. Approaches were outlined to provide a group velocity-matched very high-speed modulator electrode suitable for a low drive-voltage substrate-removed GaAs/AlGaAs electro-optic modulator     

Low-Power VLSI Implementation of the Inner Receiver for OFDM-Based WLAN Systems

In this paper, we propose low-power designs for the synchronizer and channel estimator units of the Inner Receiver in wireless local area network systems. The objective of the work is the optimization, with respect to power, area, and latency, of both the signal processing algorithms themselves and their implementation. Novel circuit design strategies have been employed to realize optimal hardware and power efficient architectures for the fast Fourier transform, arc tangent computation unit, numerically controlled oscillator, and the decimation filters. The use of multiple clock domains and clock gating reduces the power consumption further. These blocks have been integrated into an experimental digital baseband processor for the IEEE 802.11a standard implemented in the 0.25mum- 5-metal layer BiCMOS technology from Institute for High Performance Microelectronics.     

Study of thermal effects and self-heating phenomena in planar power SOI MOS transistors

Heat removal problems, thermal effects, and self-heating phenomena occurring during operation of planar power SOI MOS transistors are considered. Using device-technological simulating methods, the transistor characteristics and safe operation range were studied. It was shown that limitations of the safe operation range are mostly associated with structure self-heating rather than with the parasitic bipolar transistor.     

Explicit Formulas for Generalized Action–Angle Variables in a Neighborhood of an Isotropic Torus and Their Application

Different versions of the Darboux–Weinstein theorem guarantee the existence of action–angle-type variables and the harmonic-oscillator variables in a neighborhood of isotropic tori in the phase space. The procedure for constructing these variables is reduced to solving a rather complicated system of partial differential equations. We show that this system can be integrated in quadratures, which permits reducing the problem of constructing these variables to solving a system of quadratic equations. We discuss several applications of this purely geometric fact in problems of classical and quantum mechanics.     

Rate constants for the gas‐phase reaction of CF3CF2CF2CF2CF2CHF2 with OH radicals at 250–430 K

The rate constants k₁ for the reaction of CF₃CF₂CF₂CF₂CF₂CHF₂ with OH radicals were determined by using both absolute and relative rate methods. The absolute rate constants were measured at 250–430 K using the flash photolysis–laser‐induced fluorescence (FP‐LIF) technique and the laser photolysis–laser‐induced fluorescence (LP‐LIF) technique to monitor the OH radical concentration. The relative rate constants were measured at 253–328 K in an 11.5‐dm³ reaction chamber with either CHF₂Cl or CH₂FCF₃ as a reference compound. OH radicals were produced by UV photolysis of an O₃–H₂O–He mixture at an initial pressure of 200 Torr. Ozone was continuously introduced into the reaction chamber during the UV irradiation. The k₁ (298 K) values determined by the absolute method were (1.69 ± 0.07) × 10^?15 cm³ molecule^?1 s^?1 (FP‐LIF method) and (1.72 ± 0.07) × 10^?15 cm³ molecule^?1 s^?1 (LP‐LIF method), whereas the K₁ (298 K) values determined by the relative method were (1.87 ± 0.11) × 10^?15 cm³ molecule^?1 s^?1 (CHF₂Cl reference) and (2.12 ± 0.11) × 10^?15 cm³ molecule^?1 s^?1 (CH₂FCF₃ reference). These data are in agreement with each other within the estimated experimental uncertainties. The Arrhenius rate constant determined from the kinetic data was K₁ = (4.71 ± 0.94) × 10^?13 exp[?(1630 ± 80)/T] cm³ molecule^?1 s^?1. Using kinetic data for the reaction of tropospheric CH₃CCl₃ with OH radicals [k₁ (272 K) = 6.0 × 10^?15 cm³ molecule^?1 s^?1, tropospheric lifetime of CH₃CCl₃ = 6.0 years], we estimated the tropospheric lifetime of CF₃CF₂CF₂CF₂CF₂CHF₂ through reaction with OH radicals to be 31 years. © 2003 Wiley Periodicals, Inc. Int J Chem Kinet 36: 26–33, 2004     

A classical no-interaction theorem for bosonic strings and its quantum significance

We show that, in dimensions equal or greater than three, classical strings do not join or split. This is part of a no-interaction theorem that is also proved. The quantum theory is considered.