Laterally coupled buried heterostructure high-Q ring resonators

All-buried InP-InGaAsP ring resonators laterally coupled to bus waveguides are demonstrated. The buried configurations offer a lower built-in refractive index step along the resonator periphery, which affords enhanced optical coupling coefficients between the waveguides and reduced scattering losses caused by the resonator sidewall imperfections. Very low optical intensity attenuations of 0.4 cm/sup -1/ and coupling-limited quality factors of greater than 10/sup 5/ are observed from 200-/spl mu/m-radii ring resonators. The measured spectral linewidth is as narrow as 0.0145 nm.     

On the Feasibility of Growing Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 Single Crystals

Pb[(Zn_1/3Nb_2/3)_0.91Ti_0.09]O₃ (PZNT91/9) single crystals were grown by two methods: from solution using PbO as a self‐fluxing agent (SC method) and directly from the melt without fluxing (MC method). In both growth methods, an allomeric Pb[(Mg_1/3‐Nb_2/3)_0.69Ti_0.31]O₃ (PMNT69/31) single crystal was used as a seed. X‐ray diffraction patterns of ground crystals showed that phase‐pure perovskite PZNT91/9 single crystals were successfully fabricated by the above two methods. The composition of the crystals obtained by both the SC and MC methods was analyzed using X‐ray fluorescence, which confirmed that the crystal composition is close to the nominal value, although volatilization of PbO and segregation during crystal growth are inevitable. The MC PZNT91/9 crystals exhibit excellent piezoelectric properties, with the piezoelectric constant, d₃₃, in the range of 1800–2200 pC N^–1. This value is comparable to that of the SC crystals. However, the MC crystals show an abnormal dielectric behavior. In contrast with the SC crystals, in the MC crystals a much broader dielectric peak appears in the dielectric response curves, accompanied by a much lower peak temperature of around 105 °C. Furthermore, frequency dispersion is apparent over a much wider temperature range (even more apparent than in pure relaxors), where a large, i.e., about 70 °C, full width at half maximum (FWHM) for the dielectric peaks is observed in the dielectric response. It is speculated that such an unusual phenomenon correlates with defects, microinhomogeneities, and polar regions in the as‐grown MC crystals. The origins of this abnormality have not been interpreted in detail until now. However, optical observation of the domain structure confirms that both the SC and MC crystals possess complex structural states.     

New design of hybrid-type self-bearing motor for small, high-speed spindle

A new structure of hybrid (HB)-type self-bearing motor is proposed for miniature spindle motors. The proposed design combines the HB-type self-bearing motor and HB active magnetic bearing in the common stator and rotor pair to generate large radial forces. First, the principle and theoretical background are introduced. Then, the air gap flux is analyzed by the finite element method, and radial forces for the proposed and standard-type HB self-bearing motors are compared. Finally, experiments are conducted to confirm the performance of the proposed motor. The motor can run at relatively high rotating speed with relatively high torque compared with its small size. The levitation is very stable and the motor indicates good performance for practical application.     

Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

A self-assembly patterning method for generation of epitaxial CoSi₂ nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n⁺-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO₂ and 300 nm Si₃N₄. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi₂ layer and a subsequent out-diffusion process to form the n⁺-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.     

Measurements of small-scale fading and path loss for long range RF tags

RF modulated backscatter (RFMB), also known as modulated radar cross section or sigma modulation, is a RF transmission technique useful for short-range, low-data-rate applications, such as nonstop toll collection, electronic shelf tags, freight container identification and chassis identification in automobile manufacturing, that are constrained to have extremely low power requirements. The small-scale fading observed on the backscattered signal has deeper fades than the signal from a traditional one-way link of the same range in the same environment because the fading on the backscattered signal is the product of the fading on the off-board-generated carrier times the fading on the reflected signal. This paper considers the continuous wave (CW) type of RFMB, in which the interrogator transmitter and receiver antennas are different. This two-way link also doubles the path loss exponent of the one-way link. This paper presents the cumulative distribution functions for the measured small-scale fading and the measured path loss for short ranges in an indoor environment at 2.4 GHz over this type of link.     

Thermo-Sensitive Ba0.64Sr0.36TiO3 Thin Film Capacitors for Dielectric Type Uncooled Infrared Sensors

Ba_0.64Sr_0.36TiO₃ (BST) thin films are prepared on Pt/Ti/SiO₂/Si₃N₄/SiO₂/Si substrates by a sol-gel method. Thermo-sensitive BST thin film capacitors with a Metal-Ferroelectrics-Metal (M-F(BST)-M) structure are fabricated as the active elements of dielectric type uncooled infrared sensors. XRD are employed to analyze the crystallographic structures of the films. AFM observations reveal a smooth and dense surface of the films with an average grain size of about 35 nm. Rapid temperature annealing (RTA) process is a very efficient way to improve crystallization quality. The preferable annealing temperature is 800°C for 1 min. The butterfly shaped C-V curves of the capacitors indicate the films have a ferroelectric nature. The dielectric constant and dielectric loss of the films at 100 kHz are 450 and 0.038, respectively. At 25°C, where the thermo-sensitive capacitors work, the temperature coefficient of dielectric constant (TCD) is about 5.9 %/°C. These results indicate that the capacitors with sol-gel derived BST thin films are promising to develop dielectric type uncooled infrared sensors.     

Linear transformation shift registers

In order to exploit word-oriented operations for linear-feedback shift registers (LFSRs), Tsaban and Vishne [2002] introduced the notion of linear transformation shift registers (TSRs). An implementation of their primitive TSR generating algorithm shows that the LFSR are paired for all transformations. We prove that the characteristic polynomials of a pair of LFSRs are either both irreducible or both reducible for all transformations. This allows some time improvement when finding primitive TSRs. The authors give a full enumeration of all primitive TSRs with transformations of order 8 and LFSRs of order 3, 4, 5, and 6.     

On Faster I DDQ Measurements

The purpose of this paper is to introduce a new I _DDQ measurement technique based on active successive approximations, called ASA-I _DDQ. This technique has unique features facilitating a speed-up in I _DDQ measurement. Experimental results suggest that a significant speed-up factor (up to 4) can be obtained over the QuiC-Mon technique. Such a speed-up is a key element in the replacement of single-threshold I _DDQ testing since it amplifies the effectiveness of post-processing techniques.     

Sequential testing of sorted and transformed data as an efficient way to implement long GLRTs

It is often required to detect a long weak signal in Gaussian noise, and frequently, the exact form of that signal is parameterized but not known. A bank of matched filters provides an appropriate detector. However, in some practical applications, there are very many matched filters, and most are quite long. The consequent computational needs may render the classical bank-of-filters approach infeasibly expensive. One example, and our original motivation, is the detection of chirp gravitational waves by an Earth-based interferometer. In this paper, we provide a computational approach to this problem via sequential testing. Since the sequential tests to be used are not for constant signals, we develop the theory in terms of average sample number (ASN) for this case. Specifically, we propose two easily calculable expressions for the ASN: one a bound and the other an approximation. The sequential approach does yield moderate computational savings, but we find that by preprocessing the data using short/medium fast Fourier transforms (FFTs) and an appropriate sorting of these FFT outputs such that the most informative samples are entered to a sequential test first, quite high numerical efficiency can be realized. The idea is simple but appears to be quite successful: Examples are presented in which the computational load is reduced by several orders of magnitude. The FFT is an example of an energy-agglomerating transform, but of course, there are many others. The point here is that the transform need not match the sought signal exactly in the sense that all energy becomes confined to a single sample; it is enough that the energy becomes concentrated, and the more concentrated the better.