Positive temperature dependence of the electron impact ionizationcoefficient in In0.53Ga0.47As/InP HBTs

Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient α_n in In_0.53Ga_0.47As at medium-low electric fields are reported for the first time. The increase of α_n with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In_0.53Ga _0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In_0.53Ga _0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current     

C-t analysis of MOS capacitors under constant current stress

The effect of high oxide field stress is studied using capacitance-time (C-t) measurements of MOS capacitors. The stress results in parallel shifts of the C-t curve along the time axis. The flatband voltage shift ΔV_FB obtained from the initial deep depletion capacitance C(t=0⁺) follows the same trend as that from the high-frequency C-V characteristics. However, the discrepancy between the two flatband voltages becomes larger as the stress increases due to the effect of interface charges on C-t characteristics. The flatband voltage difference is converted to interface trap density, showing a steady increase of interface trap density with stress, similar to that from low-frequency C-V measurements     

A fully soft-switched extended-period quasi-resonantpower-factor-correction circuit

This paper presents the design criteria, procedure, and implementation of a soft-switched power-factor-correction (PFC) circuit based on the extended-period quasi-resonant (EPQR) principles. All power electronic devices including switches and diodes in the circuit are fully soft switched. The design method is demonstrated in a prototype circuit. The operating principles are confirmed with computer simulation and experimental results. A comparison of the EP-QR operation and zero-voltage-transition (ZVT) pulse-width modulation (PWM) method     

Mixed Analog Digital Simulation of Integrated Circuits with BRASIL

In this paper the approach of BRASIL in modelling digitalintegrated circuits is presented. BRASIL consists of a timingsimulator for digital MOS circuits coupled with an algorithmfor circuit simulation. The timing simulation is based upon afast macromodelling approach and the calculation of time-variantRC networks. The circuit simulator takes advantage of structuringthe system of nodal equations. With BRASIL a fast and accuratesimulation of digital circuits, with special regard to the analogbehaviour of highly integrated systems is possible.     

The strategy of edge wear prediction in CIM concept

A monitoring of tool wear in different cutting operations has been studied for many years. Special techniques have been used to detect a wear status basing upon cutting forces, acoustic emission, temperature, torque and power, vibration, noise and acceleration sensors. The adapting of a proper prediction method allows to solve problems of an automatic supervision in Computer Integrated Manufacturing systems. A task of the abrasive edge wear index prediction can be formulated as follows: disposing by the data collection of the edge wear status in a time period preceding the concerning the wear status in the successive time period embraced by the prediction method.     

Σ-ΔA/D转换技术及仿真

Σ－ΔＡ／Ｄ转换技术近年来颇受重视，因为基于该技术的Ａ／Ｄ转换器能达到很高的分辨率（１６ｂｉｔ以上），并另具一系列优点。本文对Σ－ΔＡ／Ｄ转换器的基本原理，包括过采样（Ｏｖｅｒｓａｍｐｌｉｎｇ），噪声成形（ＮｏｉｓｅＳｈａｐｉｎｇ），以及数字抽取滤波（ＤｉｇｉｔａｌＤｅｃｉｍａｔｉｏｎＦｉｌｔｅｒｉｎｇ）等内容，均作了叙述。作者还对一个２０ｂｉｔΣ－Δ转换器的算法进行了计算机仿真。该转换器采用了高阶ＭＡＳＨ噪声成形技术，而其数字抽取滤波部分则由梳状滤波器与级联的半带滤波器构成。文章中给出了仿真结果。     

Spectrophotometric analysis, thermal analysis and gravimetric determination of some metal ions with oxime and Schiff's base derivatives of N-furoylphenylhydroxylamine

The oxime and Schiff's base of N-furoylphenylhydroxylamine form complexes with Co²⁺, Cu²⁺, Zn²⁺ and Fe³⁺. These complexes were studied by means of the UV — Vis. spectra of nujol mulls, electron spin resonance (ESR) spectra and magnetic susceptibility to determine their stereochemistry. The complexes were characterized via elemental analyses, molar conductivities and thermogravimetric analyses. Organic reagents were used for the gravimetric determination of Co²⁺, Cu²⁺ and Fe³⁺ through the precipitation of their complexes. The compounds were also used for separation of a binary mixture of Cu²⁺ and Cu²⁺. Interferences were studied.