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221.
The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×1019 cm-3 at the emitter edge to 5×1018 cm-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×1019 cm-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40%  相似文献   
222.
The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain  相似文献   
223.
An interconnection strategy with built-in adaptive controllersis presented which achieves synchronization of scalar linearsystems: the closed-loop network forces all outputs to followthe same signal asymptotically while maintaining the open-loopcharacteristics. In the design of the output feedback controllers,no knowledge of system parameters is assumed, but each systemmust have the same poles and be high-gain-stable. The proofof the main theorem relies critically on derived systems-theoreticresults and the special system topology as a network of interconnectedsystems. The topology is explained by first solving the simplerproblem of signal synchronization.  相似文献   
224.
For any two points p and q in the Euclidean plane, define LUNpq = { v | vR2, dpv < dpq and dqv < dpq}, where duv is the Euclidean distance between two points u and v . Given a set of points V in the plane, let LUNpq(V) = V ∩ LUNpq. Toussaint defined the relative neighborhood graph of V, denoted by RNG(V) or simply RNG, to be the undirected graph with vertices V such that for each pair p,qV, (p,q) is an edge of RNG(V) if and only if LUNpq (V) = ?. The relative neighborhood graph has several applications in pattern recognition that have been studied by Toussaint. We shall generalize the idea of RNG to define the k-relative neighborhood graph of V, denoted by kRNG(V) or simply kRNG, to be the undirected graph with vertices V such that for each pair p,qV, (p,q) is an edge of kRNG(V) if and only if | LUNpq(V) | < k, for some fixed positive number k. It can be shown that the number of edges of a kRNG is less than O(kn). Also, a kRNG can be constructed in O(kn2) time. Let Ec = {epq| pV and qV}. Then Gc = (V,Ec) is a complete graph. For any subset F of Ec, define the maximum distance of F as maxepqFdpq. A Euclidean bottleneck Hamiltonian cycle is a Hamiltonian cycle in graph Gc whose maximum distance is the minimum among all Hamiltonian cycles in graph Gc. We shall prove that there exists a Euclidean bottleneck Hamiltonian cycle which is a subgraph of 20RNG(V). Hence, 20RNGs are Hamiltonian.  相似文献   
225.
The influence of the charge of a metal cation and the nature of a coagulant on the recovery of butadiene-styrene rubber and properties of rubber stocks and vulcanizates was examined.  相似文献   
226.
A formulation of an implicit characteristic-flux-averaging method for the unsteady Euler equations with real gas effects is presented. Incorporation of a real gas into a general equation of state is achieved by considering the pressure as a function of density and specific internal energy. The Ricmann solver as well as the flux-split algorithm are modified by introducing the pressure derivatives with respect to density and internal energy. Expressions for calculating the values of the flow variables for a real gas at the cell faces are derived. The Jacobian matrices and the eigenvectors are defined for a general equation of state. The solution of the system of equations is obtained by using a mesh-sequencing method for acceleration of the convergence. Finally, a test case for a simple form of equation of state displays the differences from the corresponding solution for an ideal gas.  相似文献   
227.
New diphenyldiacetylenes of the type with A, B = H and/or F; m = 0, 1; n = 1-4; and X = C n H 2n + 1 , F, CF 3 or CN were synthesized and their mesomorphic properties determined by hot stage polarizing microscopy and DSC. When m = 0, all of these compounds showed only a nematic phase except when X = CF 3 when both nematic and smectic A phases were seen. Both clearing and melting temperatures were higher than those reported for substitution with the corresponding alkyl chains but the much larger increase in clearing temperatures produced considerably wider nematic phases. Eutectic mixtures of a few of these olefins yielded nematic materials also having much wider temperature ranges and higher clearing temperatures than the eutectic mixtures of the alkyl compounds, while retaining their high birefringence and low viscosities. Such materials are of interest for beam-steering devices.

Four of the diacetylenes with m = 1 ( A, B = H) were also prepared ( X = C 6 H 13 , F, n = 2, 3). When X was C 6 H 13 ( n = 2), the nematic range was smaller in the 2- than in the 1-olefin but wider than in the alkyl series. When X = F, either no nematic phase or a monotropic one was observed, whereas the 1-olefins gave a much wider nematic phase. Both transition temperatures were lower than those for the corresponding 1-olefin and alkyl analogues. The compound with X = C 6 H 13 and n = 2 had a melting temperature below room temperature.  相似文献   
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230.
Raman scattering in glasses is investigated theoretically. The experimental Raman spectra of glasses exhibit a low-frequency peak (at ~10 cm?1) that, as a rule, is attributed to vibrational modes of nanometer-sized structural units (nanocrystallites). It is established that the elastic moduli of nanocrystallites must necessarily be dependent on their sizes due to the Laplace pressure effect. A theory of the low-frequency peak is constructed using a realistic size distribution function of nanocrystallites with allowance made for the Laplace pressure effect and the dissipation of vibrational energy. Within this theory, the shape of the low-frequency peak and its evolution with temperature can be analyzed quantitatively. The proposed approach offers a physical interpretation of the experimental data and provides insight into the relation of the characteristic nanocrystallite sizes to the elastic moduli and surface tension coefficients of materials.  相似文献   
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