Performance of interface engineeredSiNx/ICL/InP/In0.53Ga0.47As/InP dopedchannel HIGFET's

SiN_x/InP/InGaAs doped channel passivated heterojunction insulated gate field effect transistors (HIGFETs) have been fabricated for the first time using an improved In-S interface control layer (ICL). The insulated gate HIGFETs exhibit very low gate leakage (10 nA@V_GS =±5 V) and I_DS (sat) of 250 mA/mm. The doped channel improves the DC characteristics and the HIGFETs show transconductance of 140-150 mS/mm (L_g=2 μm), f_t of 5-6 GHz (L_g=3 μm), and power gain of 14.2 dB at 3 GHz. The ICL HIGFET technology is promising for high frequency applications     

Threshold voltage-minimum gate length trade-off in buried channelPMOS devices for scaled supply voltage CMOS technologies

The trade-off between threshold voltage (V_th) and the minimum gate length (L_min) is discussed for optimizing the performance of buried channel PMOS transistors for low voltage/low power high-speed digital CMOS circuits. In a low supply voltage CMOS technology it is desirable to scale V_th and L_min for improved circuit performance. However, these two parameters cannot be scaled independently due to the channel punch-through effect. Statistical process/device modeling, split lot experiments, circuit simulations, and measurements are performed to optimize the PMOS transistor current drive and CMOS circuit speed. We show that trading PMOS transistor V_th for a smaller L_min results in faster circuits for low supply voltage (3.3 to 1.8 V) n⁺-polysilicon gate CMOS technology, Circuit simulation and measurements are performed in this study. Approximate empirical expressions are given for the optimum buried channel PMOS transistor V _th for minimizing CMOS circuit speed for cases involving: (1) constant capacitive load and (2) load capacitance proportional to MOS gate capacitance. The results of the numerical exercise are applied to the centering of device parameters of a 0.5 μm 3.3 V CMOS technology that (a) matches the speed of our 0.5 μm 5 V CMOS technology, and (b) achieves good performance down to 1.8 V power supply. For this process the optimum PMOS transistor V_th (absolute value) is approximately 0.85-0.90 V     

Analytical evaluation technique of self-phase-modulation effect onthe performance of cascaded optical amplifier systems

We propose an approximate analytical evaluation technique of self-phase-modulation (SPM) in cascaded optical amplifier systems. The effect of SPM on optical pulse distortion is represented by the increase in the α-parameter of the transmitter. The waveform distortion is approximated by assuming that the pulse is transmitted over a dispersive fiber without nonlinearity. This technique greatly reduces the calculation time, and is especially useful in designing cascaded amplifier systems, evaluating theoretical maximum transmission distance     

Transmission distance of in-line amplifier systems withgroup-velocity-dispersion compensation

Group-velocity dispersion (GVD) compensation in in-line amplifier systems is evaluated from the viewpoint of improving the transmission distance. The nonlinear Schrodinger equation, which simulates signal propagation in optical fibers, is numerically evaluated to clarify the optimum configuration for GVD compensation. It is shown that the optimum amount of GVD compensation is about 100% of the GVD experienced by the transmitted signal. The optimum compensation interval is found to be a function of the bit rate, signal power, and dispersion parameter. For dispersion parameter values ranging from about -0.1 ps/nm/km to -10 ps/nm/km, and an amplifier noise figure of about 6 dB, the optimum compensation configuration can eliminate the GVD from in-line amplifier systems, thus improving transmission distances to those limited by self-phase modulation and higher-order GVD     

Integrated-optic double-ring resonators with a wide free spectralrange of 100 GHz

Integrated-optic double-ring resonators with a wide free spectral range (FSR) of 100 GHz are fabricated using GeO₂-doped silica waveguides with a high relative refractive index difference (Δ) of 1.5%. The resonators are composed of two ring resonators comprising small ring waveguides with radii of 1.75 and 2.0 mm. The double-ring resonator module exhibited a wide FSR of 98.0 GHz, a finesse of higher than 138, a low crosstalk of less than -11.7 dB, and a low insertion loss of 6.1 dB. The measured FSR of 98.0 GHz is wider than any previously reported ring resonator composed of optical waveguides     

Electrical passivation in hydrogen plasma exposed GaN

Lightly p-doped (3×10¹⁷ cm^-3) GaN grown on GaAs substrates by metal organic molecular beam epitaxy (MOMBE) shows deactivation of the residual acceptors on exposure to a microwave (2.45 GHz) hydrogen plasma at 250°C. Subsequent annealing to 350°C produces further dopant passivation, while higher temperatures (450°C) restore the initial conductivity. These results suggest that hydrogen carrier gases should be avoided during vapour phase growth of III-V nitrides     

X-ray diffraction study of 'side-on fixed' homopolysiloxanes from nematic to smectic C phases

The X-ray patterns for the nematic phase in a series of side-on fixed polysiloxanes show different kinds of diffuse elements which imply complex short range ordering. A systematic structural study of the evolution of the patterns versus two molecular parameters, namely the spacer length and the length of the terminal aliphatic tails, suggests the possible occurrence of a smectic C phase for certain values of these parameters. Taking into account these tendencies, new synthesis led to a nematic-smectic C polymorphism observed for the first time in side-on fixed polysiloxanes.     

Nonparametric decision-making models for large samples

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 79–83, September, 1995.     

Modified frequency domain kurtosis for signal processing

An operator sensitive to signal probability distribution is obtained, by integrating ideas from higher-order statistics and a frequency approach to signal processing. This function, based on a modified frequency domain kurtosis, assigns a level of stationarity to each signal spectrum component and enhances unsteady components over stationary sinusoids embedded in noise     

On exact order estimates of N-widths of classes of functions analytic in a simply connected domain

In the spaces E _q(Ω), 1 < q < ∞, introduced by Smirnov, we obtain exact order estimates of projective and spectral n-widths of the classes W ^r E _p(Ω) and W ^r E _p(Ω)Ф in the case where p and q are not equal. We also indicate extremal subspaces and operators for the approximative values under consideration.