Vibrational control of crystal growth from liquid phase

Modeling and numerical simulations of the convective flows induced by the vibration of the monocrystal during crystal growth have been performed for two configurations simulating the Cz and FZ methods. This permitted to emphasize the role of different vibrational mechanisms in the formation of the average flows. It is shown that an appropriate combination of these mechanisms can be used to counteract the usual convective flows (buoyancy- and/or thermocapillary-driven) inherent to crystal growth processes from the liquid phase. While vibrational convection is rather complex due to these identified mechanisms, the new modeling used in the present paper opens up very promising perspectives to efficiently control heat and mass transfer during real industrial applications of crystal growth from the liquid phase.     

Database reverse engineering: From requirements to CARE tools

This paper analyzes the requirements that CASE tools should meet for effective database reverse engineering (DBRE), and proposes a general architecture for data-centered applications reverse engineering CASE environments. First, the paper describes a generic DBMS-independent DBRE methodology, then it analyzes the main characteristics of DBRE activities in order to collect a set of desirable requirements. Finally, it describes DB-MAIN, an operational CASE tool developed according to these requirements. The main features of this tool that are described in this paper are its unique generic specification model, its repository, its transformation toolkit, its user interface, the text processors, the assistants, the methodological control and its functional extensibility. Finally, the paper describes five real-world projects in which the methodology and the CASE tool were applied. This is a heavily revised and extended version of “Requirements for Information System Reverse Engineering Support” by J.-L. Hainaut, V. Englebert, J. Henrard, J.-M. Hick, D. Roland, which first appeared in the Proceedings of the Second Working Conference on Reverse Engineering, IEEE Computer Society Press, pp. 136–145, July 1995. This paper presents some results of the DB-MAIN project. This project is partially supported by the Région Wallonne, the European Union, and by a consortium comprising ACEC-OSI (Be), ARIANE-II (Be), Banque UCL (Lux), BBL (Be), Centre de recherche public H. Tudor (Lux), CGER (Be), Cockerill-Sambre (Be), CONCIS (Fr), D'Ieteren (Be), DIGITAL, EDF (Fr), EPFL (CH), Groupe S (Be), IBM, OBLOG Software (Port), ORIGIN (Be), Ville de Namur (Be), Winterthur (Be), 3 Suisses (Be). The DB-Process subproject is supported by the Communauté Fran?aise de Belgique.     

Novel technique for SiO2 formed by liquid-phasedeposition for low-temperature processed polysilicon TFT

A technique for SiO₂ formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO₂ film with a lower P-etch rate shows a dense structure. LPD SiO₂ also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO ₂ as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs)     

Kinetics of benzonitrile nitration with mixed acid under homogeneous conditions

Chemical kinetics of benzonitrile nitration with mixed acid is investigated in the temperature range 283–299 K. Pseudo-first-order rate constants are evaluated by means of rate experiments on homogeneous reacting mixtures having large stoichiometric excesses of nitric acid. The second-order kinetic constants for nitronium ion attack to the aromatic substrate are derived on the basis of the assessed nitration mechanism. An activation energy of 604 ± 37 kJ mol^?1 is calculated for this reaction step. © 1993 John Wiley & Sons, Inc.     

Arithmetic coding for data compression

Arithmetic coding provides an effective mechanism for removing redundancy in the encoding of data. We show how arithmetic coding works and describe an efficient implementation that uses table lookup as a first alternative to arithmetic operations. The reduced-precision arithmetic has a provably negligible effect on the amount of compression achieved. We can speed up the implementation further by use of parallel processing. We discuss the role of probability models and how they provide probability information to the arithmetic coder. We conclude with perspectives on the comparative advantages and disadvantages of arithmetic coding     

AN ALTERNATIVE SPECIFICATION FOR MODELING GROUNDWATER DYNAMICS

This research extends previous work with dynamic models to manage groundwater quality by using the consumptive nitrate use rate instead of the nitrate application rate. The analysis indicates that misspecification results in overestimation of economic benefits, and supra-optimum nitrogen fertilizer application rates and groundwater nitrate stocks at a steady state.     

Structured genetic algorithm for robust H∞ controlsystems design

A structured genetic algorithm (SGA) approach is developed for robust controller design based on the concept of an H^∞ loop-shaping technique and the method of inequalities. Such an SGA is capable of simultaneously searching the orders and coefficients of the precompensator and postcompensator for the weighted plant. It is, therefore, not necessary to predefine the order of compensators as in usual practice. A multiple objective ranking approach is also incorporated so that the design criteria of extreme plants can be easily achieved. The effectiveness of such a technique is illustrated by a high-purity distillation column design example     

High speed p-type SiGe modulation-doped field-effect transistors

We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (f_T) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (g_m) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K