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101.
J. Maul I. Strachnov S. Karpuk P. Bernhard A. Oelsner G. Schönhense G. Huber 《Applied Physics A: Materials Science & Processing》2006,82(1):43-47
We report morphologic changes of metallic surfaces at the onset of ablation, starting from gentle ablation to the emergence of ablation craters. The evolution of both observed melting zones and of ablation craters therein are investigated in dependence of the ablation laser fluence for nanosecond ultraviolet laser pulses. Further, consequences of crater formation for cluster synthesis within the released atomic vapor are pointed out. PACS 52.38.Mf; 79.20.Ds; 65.40.De 相似文献
102.
J. C. Fabris S. V. B. Gonçalves P. E. de Souza 《General Relativity and Gravitation》2002,34(12):2111-2126
The mass power spectrum for a Universe dominated by the Chaplygin gas is evaluated numerically from scales of the order of the Hubble horizon to 100 Mpc. The results are compared with a pure baryonic Universe and a cosmological constant model. In all three cases, the spectrum increases with k, the wavenumber of the perturbations. The slope of the spectrum is higher for the baryonic model and smaller for the cosmological constant model, the Chaplygin gas interpolating these two models. The results are analyzed in terms of the sound velocity of the Chaplygin gas and the moment the Universe begins to accelerate. 相似文献
103.
In the study of the behaviors of barriers in an enclosed field, one should take into account such phenomena as sound energy reflection, absorption, scattering and diffraction. Therefore, the study is much more difficult than that in free field. In this paper, sound barriers are classified into four kinds according to their size, number and shape. Each kind of barriers is modelled by a corresponding method based on a computer program—SOFIS. The program combines the ray-tracing technique and statistical method. The impulse response and some acoustical parameters such as sound pressure level at different positions can be calculated by the program, no matter there are a certain kind of barriers in the field or the field is empty. The ray-tracing program and the algorithms for various barriers are validated by the comparison between measurement and prediction of the reverberation room and the anechoic room of the Northwestern Polytechnic University. 相似文献
104.
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 5, pp. 815–819, May, 1991. 相似文献
105.
106.
The dynamics of multiphoton transitions in a two-level spin system excited by transverse microwave and longitudinal RF fields with the frequencies ωmw and ωrf, respectively, is analyzed. The effective time-independent Hamiltonian describing the “dressed” spin states of the “spin + bichromatic field” system is obtained by using the Krylov-Bogoliubov-Mitropolsky averaging method. The direct detection of the time behavior of the spin system by the method of nonstationary nutations makes it possible to identify the multiphoton transitions for resonances ω0 = ωmw + rωrf (ω0 is the central frequency of the EPR line, r = 1, 2), to measure the amplitudes of the effective fields of these transitions, and to determine the features generated by the inhomogeneous broadening of the EPR line. It is shown that the Bloch-Siegert shifts for multiphoton resonances at the inhomogeneous broadening of spectral lines reduce only the nutation amplitude but do not change their frequencies. 相似文献
107.
The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH4/SiF4 mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH4 and SiF4 radicals show that the SiH4 radicals are important in the nucleation and growth of grains. However, SiF4 radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF4 in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films. 相似文献
108.
Buttari D. Chini A. Meneghesso G. Zanoni E. Moran B. Heikman S. Zhang N.Q. Shen L. Coffie R. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2002,23(2):76-78
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs 相似文献
109.
Reliability prediction models to support conceptual design 总被引:1,自引:0,他引:1
During the early stages of conceptual design, the ability to predict reliability is very limited. Without a prototype to test in a lab environment or without field data, component failure rates and system reliability performance are usually unknown. A popular method for early reliability prediction is to develop a computer model for the system. However, most of these models are extremely specific to an individual system or industry. This paper presents three general procedures (using both simulation and analytic solution techniques) for predicting system reliability and average mission cost. The procedures consider both known and unknown failure rates and component-level and subsystem-level analyzes. The estimates are based on the number of series subsystems and redundant (active or stand-by) components for each subsystem. The result is a set of approaches that engineers can use to predict system reliability early in the system-design process. Software was developed (and is discussed in this paper) that facilitates the application of the simulation-based techniques. For the specific type of system and mission addressed in this paper, the analytic approach is superior to the simulation-based prediction models. However, all three approaches are presented for two reasons: (1) to convey the development process involved with building these prediction tools; and (2) the simulation-based approaches are of greater value as the research is extended to consider more complex systems and scenarios 相似文献
110.
Mobility management for VoIP service: Mobile IP vs. SIP 总被引:4,自引:0,他引:4
Wireless Internet access has gained significant attention as wireless/mobile communications and networking become widespread. The voice over IP service is likely to play a key role in the convergence of IP-based Internet and mobile cellular networks. We explore different mobility management schemes from the perspective of VoIP services, with a focus on Mobile IP and session initiation protocol. After illustrating the signaling message flows in these two protocols for diverse cases of mobility management, we propose a shadow registration concept to reduce the interdomain handoff (macro-mobility) delay in the VoIP service in mobile environments. We also analytically compute and compare the delay and disruption time for exchanging signaling messages associated with the Mobile IP and SIP-based solutions. 相似文献