Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control).     

Experimental characterization of hexatic smectic phases through electro-optic studies and dielectric relaxation spectroscopy

The electro-optic and complex dielectric behaviour of an antiferroelectric liquid crystal 4-(1-methylheptyloxycarbonyl)phenyl 4'-(n-butanoyloxyprop-1-oxy)biphenyl-4-carboxylate, having chiral SmC_A* and hexatic smectic phases, have been investigated. Complex dielectric permittivities were measured as a function of frequency, d.c. bias field and temperature. Spontaneous polarization was measured by the current reversal technique; tilt angle was measured under a polarizing microscope using a low frequency electric field. The electro-optic properties and dielectric behaviour of the material are compared with results obtained by DSC and polarizing optical microscopy. Dielectric relaxation processes in SmC_A* and hexatic smectic phases were determined. The dielectric strength at the SmC_A* to hexatic smectic phase transition is discussed in terms of coupling between the long range bond orientational order and smectic C director. It seems from the results of spontaneous polarization and dielectric relaxation spectroscopy that the material might possess an additional phase between the SmC_A* and hexatic smectic I* phases.     

Ultrasonic spectroscopic evaluation of the ring‐opening metathesis polymerization of dicyclopentadiene

An in situ ultrasonic spectroscopy technique was used to study the ring‐opening metathesis polymerization of dicyclopentadiene catalyzed by bis(tricyclohexylphosphine)benzylidene ruthenium dichloride. A reaction cell employing a flexible poly(ethylene terephthalate) window for pulse echo ultrasonic spectroscopy was used to monitor the polymerization. The changes in the density, wave speed, acoustic modulus, and attenuation were all simultaneously monitored. In comparison with Fourier transform infrared (FTIR) spectroscopy data, the changes in the density, velocity, and modulus only accurately measured the rate constant for the metathesis of the cyclopentyl unsaturation. The ultrasonic values were within 6% of the values determined by FTIR. The activation energy for metathesis of the cyclopentyl unsaturation was 84 kJ mol^?1, following first‐order kinetics. Rate constants for the polymerization of the norbornyl unsaturation could not be determined by ultrasound. The gel point, vitrification, and qualitative information about the reaction rate could be determined from the change in the attenuation. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 1323–1333, 2003     

Specific features of optical orientation and relaxation of electron spins in quantum wells with a large spin splitting

The processes of optical spin orientation and spin relaxation of electrons are treated theoretically for semiconductor quantum wells, in which the spin splitting of the energy spectrum is comparable with the characteristic energy of charge carriers. The density matrix of photoexcited electrons at the instant of optical excitation is obtained in explicit form. A system of kinetic equations describing the behavior of the spin density matrix at an arbitrary relation between the average energy of charge carriers and the spin splitting is derived. It is demonstrated that, upon photoexcitation, a noticeable degree of orientation can be attained only in the pulse mode of operation, when the photoexcitation pulse duration is comparable with the period of spin precession in the field of spin splitting. It is shown that the total spin of the ensemble of electrons exhibits oscillations damping with time; the shape and damping time of the oscillations are sensitive to the parameters of photoexcitation and the spin splitting.     

Development of Stretch Solder Interconnections for Wafer Level Packaging

A wafer level packaging technique has been developed with an inherent advantage of good solder joint co-planarity suitable for wafer level testing. A suitable weak metallization scheme has also been established for the detachment process. During the fabrication process, the compliancy of the solder joint is enhanced through stretching to achieve a small shape factor. Thermal cycling reliability of these hourglass-shaped, stretch solder interconnections has been found to be considerably better than that of the conventional spherical-shaped solder bumps.     

What We Mean by Future-Proofing

Perhaps the most powerful claim that advocates of fiber can make,on top of the massive bandwidthfiber makes possible today, is that fiber is future-proof. That is, the fiber that is laid today can be upgraded so that the same strands of glass can carry massively more bandwidth in the future.     

Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same.     

Arsenic determination in marine sediment using ultrasound for sample preparation.

This work deals with As determination in marine sediment using ultrasound for sample preparation. It is shown that As can be quantitatively extracted from marine sediment using 20% (v/v) HCl and sonication. The slurry is centrifuged and the analyte is determined in the supernatant by hydride generation atomic absorption spectrometry (HG AAS). A flow injection (FI) system is employed for hydride generation, with 0.5% (m/v) NaBH(4) used as reducdant and a 20% (v/v) HCl used as sample carrier. The limit of quantification is 1.6 microg g(-1) of As, which is based on 800 microl of sample solution and 0.200 g of sample mass in a volume of 50 mL. Certified and non certified marine sediment samples were analyzed; the results were in accordance with the certified or reference values. Speciation analysis by HPLC-ICP-MS showed that As(V) is the only detectable As species present in the supernatant of the centrifuged sample.     

Photoluminescent properties and Raman spectra of ZnO-based scintillating glasses

Glasses in SiO₂–ZnO–BaO system with the different ZnO/BaO ratio were studied. In some cases, BaF₂ was introduced to substitute for BaO on the equal base. Photoluminescent spectra showed that ZnO in glass matrices behaved somewhat differently from ZnO crystals. Especially, the introduction of fluorine ions led to dramatic shift of UV emission band of glasses closer to that of ZnO crystals. Raman spectral analysis provided consistent results. In particular, Raman bands in the high frequency region are sensitive to effects of different ZnO/BaO or BaF₂/BaO ratio on structure of glasses.     

The kinetics of the light-induced defect creation in hydrogenated amorphous silicon – Stretched exponential relaxation

Our model for light-induced defect creation in hydrogenated amorphous silicon is applied to its kinetics, i.e., the growing curve of light-induced dangling bond density as a function of illumination time, which is fitted to a stretched exponential function. Two parameters β and τ involved in the function are estimated as functions of saturated dangling bond density in terms of our model. These are compared with two experimental results, i.e., our results obtained from ESR measurements and Shimakawa et al.’s results obtained from photoconductivity measurements. The saturated dangling bond density is also measured as a function of the generation rate of free carriers. The experimental results are compared with calculated results and discussed.