Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes

The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes.     

A 1-V 10.7-MHz switched-opamp bandpass /spl Sigma//spl Delta/ modulator using double-sampling finite-gain-compensation technique

A 1 V switched-capacitor (SC) bandpass sigma-delta (/spl Sigma//spl Delta/) modulator is realized using a high-speed switched-opamp (SO) technique with a sampling frequency of up to 50 MHz, which is improved ten times more than prior 1 V SO designs and comparable to the performance of the state-of-the-art SC circuits that operate at much higher supply voltages. On the system level, a fast-settling double-sampling SC biquadratic filter architecture is proposed to achieve high-speed operation. A low-voltage double-sampling finite-gain-compensation technique is employed to realize a high-resolution /spl Sigma//spl Delta/ modulator using only low-DC-gain opamps to maximize the speed and to reduce power dissipation. On the circuit level, a fast-switching methodology is proposed for the design of the switchable opamps to achieve a switching frequency up to 50 MHz. Implemented in a 0.35-/spl mu/m CMOS process (V/sub TP/=0.82 V and V/sub TN/=0.65 V) and at 1 V supply, the modulator achieves a measured peak signal-to-noise-and-distortion ratio (SNDR) of 42.3 dB at 10.7 MHz with a signal bandwidth of 200 kHz, while dissipating 12 mW and occupying a chip area of 1.3 mm/sup 2/.     

The measurement of solar array discharges in a simulated spaceenvironment

A spacecraft in a plasma builds up charge on all the dielectric surfaces and interfaces. Once the net charge exceeds the dielectric breakdown of the material, a discharge occurs. One of the more susceptible pieces of equipment is the antenna/receiver system. The radiated E-field may be strong enough to create an ambiguous signal which may be misinterpreted by the system electronics and cause a system malfunction. A technique is developed to monitor the radiated E-field of materials discharging in an electron environment, using vacuum chambers for measuring the material discharges which are made of highly reflective materials. These chambers affect the radiated E-field due to multiple reflections from the walls. The technique developed defines a method for correcting the effects caused by the measurement facilities. The methodology is: monitor the radiated E-field with a broadband dipole antenna, and digitize the radiated signal as a function of time. Determine the frequency response of the radiated E-field using an FFT algorithm. Measure the transmission and reflection characteristics of the two-port network inside the measurement chamber, and determine the impedance network from the measured E-parameters across the frequency band of interest. Transform the measured E-field frequency response through the impedance network to obtain the frequency response of the actual radiated discharge current. Find the inverse FFT of this response to obtain the actual radiated discharge current response. This technique aids in the prediction of the E-field coupling into receive antennas on-board actual satellites     

Diurnal and spatial variation of xylem dielectric constant in Norway Spruce (Picea abies [L.] Karst.) as related to microclimate, xylem sap flow, and xylem chemistry

Spatial and temporal variations in vegetation dielectric properties strongly influence the microwave backscatter characteristics of forested landscapes. This paper examines the relationship between xylem tissue dielectric constant, xylem sap flux density, and xylem sap chemical composition as measured in the stems of two Norway Spruce (Picea abies [L.] Karst.) trees in the Fichtelgebirge region of Northern Bavaria, Germany. Dielectric constant and xylem sap flux were monitored continuously from June through October 1995, at several heights along the tree trunks. At the end of the measurement series, each tree was harvested, and its xylem sap extracted and analyzed to determine the concentrations of amino acids and cations. Results show that the sap flux density was correlated with vapor pressure deficit (VPD) at all heights in the stem. In contrast, the xylem tissue dielectric constant is influenced by VPD but can exhibit a significant temporal lag relative to changes in VPD. This lag varies with position along the tree trunk. The temporal variability of the dielectric constant is compared with both trees at several positions along the tree trunks. Results of xylem sap chemical analysis are presented. We show that spatial and temporal variability in the xylem tissue dielectric constant is influenced not only by water content, but by variations in xylem sap chemistry as well. This has important implications for microwave remote sensing of forested landscapes, as useful information may be acquired regarding stand physiology and water relations and where variations in dielectric properties within individual trees and across geographic areas can be significant error sources for forest inventory mapping.     

High-performance automatic target recognition through data-specificVLSI

Under the Mojave configurable computing project, we have developed a system for achieving high performance on an automatic target recognition (ATR) application through the use of configurable computing technology. The ATR system studied here involves real-time image acquisition from a synthetic aperture radar (SAR). SAR images exhibit statistical properties which can be used to improve system performance. In this paper, the Mojave configurable computing system uses field programmable gate arrays (FPGA's) to implement highly specialized circuits while retaining the flexibility of programmable components. A controller sequences through a set of specialized circuits in response to real-time events. Computer-aided design (CAD) tools have been developed to support the automatic generation of these specialized circuits. The resulting configurable computing system achieves a significant performance advantage over the existing solution, which is based on application specific integrated circuit (ASIC) technology     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

Multispectral data compression using bidirectional interbandprediction

The introduction of high spatial and spectral resolution sensors on-board remote-sensing spacecraft has increased, by orders of magnitude, the data rates which need to be sustained on the down-link or cross-link transmission channels. Since these channels are severely limited in capacity, the need arises to perform on-board compression to reduce the volume of data which would need to be down-linked. This paper discusses the development and refinement of a low complexity lossy spectral/spatial compression method which provides high compression ratios at low levels of distortion. The developed techniques uses pixels in adjacent bands to predict the intensity of pixels in the band being compressed via a simple linear prediction model. This prediction method when combined with a low-distortion discrete cosine transform (DCT) block coding method yields performance comparable to block-adaptive Karhunen-Loeve Transform (KLT)-DCT methods without incurring the complexity penalty of the KLT. The methods' performance suffers under misregistration. A fractional-pixel interpolation enhancement to the basic technique significantly improves the performance in the case of misregistered bands     

An easy-to-use mismatch model for the MOS transistor

In this paper, a physics-based mismatch model is presented. It is demonstrated on a 0.18-/spl mu/m technology that a simple mismatch model can still be used to characterize deep-submicron technologies. The accuracy of the model is examined and found to be within 20% in the strong inversion region. Bulk bias dependence is modeled in a physical way. To extract the mismatch parameters, a weighted fit is introduced. It is shown that the width and length dependence of the mismatch parameters is given by the Pelgrom model.