W-band divide-by-3 frequency divider using 0.1 /spl mu/m InAlAs/InGaAs metamorphic HEMT technology

A W-band divide-by-3 frequency divider with wide bandwidth and low power dissipation is presented using harmonic injection-locking technique. A cascode FET is employed for a self-oscillating second-harmonic mixer which is injection-locked by third-harmonic input to obtain the division order of three. The fabricated frequency divider using 0.1 /spl mu/m GaAs metamorphic HEMT technology shows superior performance such as large bandwidth of 6.1 GHz around 83.1 GHz (7.3%) under small DC power consumption of 12 mW.     

Highly monomode W1 waveguide square lattice photonic crystal lasers

Lasing of W1 square lattice-based photonic crystal lasers on the substrate approach is analyzed. A second-order distributed feedback highly monomode behavior is observed. A comprehensive two-dimensional and three-dimensional finite-difference time-domain computation analysis shows that this characteristic arises from the lattice geometry. Single-mode lasers can be obtained using this geometry, opening the way to the realization of monomode laser arrays.     

Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese

It is experimentally ascertained that light stimulates the negative magnetoresistance observed in a high electric field in silicon doped with boron and manganese. The optimum conditions (the electric field, temperature, illumination, and resistivity of the material) for observation of the largest magnitude of negative magnetoresistance in (Si:B):Mn are determined. The dependence of the negative magnetoresistance on the concentration of compensating impurity is established.     

Interband light absorption in size-confined systems in uniform electric fields

A simple approach to calculation of the interband absorption coefficient in a uniform electric field is developed. This approach provides a means for studying the special features of electroabsorption in a wide class of semiconductor systems on the basis of the most general relationships. The approach is used to study the electroabsorption in two-dimensional systems with different profiles of their one-dimensional potential, quantum wells, and superlattices in magnetic fields.     

A Recursive Frequency Estimator Using Linear Prediction and a Kalman-Filter-Based Iterative Algorithm

This paper proposes a new Kalman-filter-based recursive frequency estimator for discrete-time multicomponent sinusoidal signals whose frequencies may be time-varying. The frequency estimator is based on the linear prediction approach and it employs the Kalman filter to track the linear prediction coefficients (LPCs) recursively. Frequencies of the sinusoids can then be computed using the estimated LPCs. Due to the coloredness of the linear prediction error, an iterative algorithm is employed to estimate the covariance matrix of the prediction error and the LPCs alternately in the Kalman filter in order to improve the tracking performance. Simulation results show that the proposed Kalman-filter-based iterative frequency estimator can achieve better tracking results than the conventional recursive least-squares-based estimators.     

Puzzles in astrophysics in the past and present

About 400 years have passed since the great discoveries by Galileo, Kepler, and Newton, but astronomy still remains an important source of discoveries in physics. They start with puzzles, with phenomena difficult to explain, and phenomena which in fact need new physics for explanation. Do such puzzles exist now? There are at least three candidates: absence of absorption of TeV gamma radiation in extragalactic space (violation of Lorentz invariance?), absence of GZK cutoff in the spectrum of ultrahigh-energy cosmic rays (new particle physics?), tremendous energy (up to 10⁵⁴ erg) released in gamma ray bursts on a time scale of a second (collapsing stars or sources of a new type?). Do these puzzles really exist? A critical review of these phenomena is given.     

Optical orientation of holes in strained nanostructures

A theory describing the optical orientation and Hanle effect for holes in quantum wells or quantum dots based on cubic semiconductors is developed. It is demonstrated that the presence of internal or external strain in quantum-confinement heterostructures leads to the dependence of the Hanle effect on the orientation of the magnetic field with respect to the heterostructure growth axis.     

Cost-Efficient SHA Hardware Accelerators

This paper presents a new set of techniques for hardware implementations of Secure Hash Algorithm (SHA) hash functions. These techniques consist mostly in operation rescheduling and hardware reutilization, therefore, significantly decreasing the critical path and required area. Throughputs from 1.3 Gbit/s to 1.8 Gbit/s were obtained for the SHA implementations on a Xilinx VIRTEX II Pro. Compared to commercial cores and previously published research, these figures correspond to an improvement in throughput/slice in the range of 29% to 59% for SHA-1 and 54% to 100% for SHA-2. Experimental results on hybrid hardware/software implementations of the SHA cores, have shown speedups up to 150 times for the proposed cores, compared to pure software implementations.      

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.