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251.
Takauchi H. Tamura H. Matsubara S. Kibune M. Doi Y. Chiba T. Anbutsu H. Yamaguchi H. Mori T. Takatsu M. Gotoh K. Sakai T. Yamamura T. 《Solid-State Circuits, IEEE Journal of》2003,38(12):2094-2100
We describe a CMOS multichannel transceiver that transmits and receives 10 Gb/s per channel over balanced copper media. The transceiver consists of two identical 10-Gb/s modules. Each module operates off a single 1.2-V supply and has a single 5-GHz phase-locked loop to supply a reference clock to two transmitter (Tx) channels and two receiver (Rx) channels. To track the input-signal phase, the Rx channel has a clock recovery unit (CRU), which uses a phase-interpolator-based timing generator and digital loop filter. The CRU can adjust the recovered clock phase with a resolution of 1.56 ps. Two sets of two-channel transceiver units were fabricated in 0.11-/spl mu/m CMOS on a single test chip. The transceiver unit size was 1.6 mm /spl times/ 2.6 mm. The Rx sensitivity was 120-mVp-p differential with a 70-ps phase margin for a common-mode voltage ranging from 0.6 to 1.0 V. The evaluated jitter tolerance curve met the OC-192 specification. 相似文献
252.
P. G. Muzykov Y. I. Khlebnikov S. V. Regula Y. Gao T. S. Sudarshan 《Journal of Electronic Materials》2003,32(6):505-510
To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement
techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable
graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique,
and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values
of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable
graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe
method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer
was also obtained and reported in this work. 相似文献
253.
End-to-end congestion control schemes: utility functions, random losses and ECN marks 总被引:1,自引:0,他引:1
We present a framework for designing end-to-end congestion control schemes in a network where each user may have a different utility function and may experience noncongestion-related losses. We first show that there exists an additive-increase-multiplicative-decrease scheme using only end-to-end measurable losses such that a socially optimal solution can be reached. We incorporate round-trip delay in this model, and show that one can generalize observations regarding TCP-type congestion avoidance to more general window flow control schemes. We then consider explicit congestion notification (ECN) as an alternate mechanism (instead of losses) for signaling congestion and show that ECN marking levels can be designed to nearly eliminate losses in the network by choosing the marking level independently for each node in the network. While the ECN marking level at each node may depend on the number of flows through the node, the appropriate marking level can be estimated using only aggregate flow measurements, i.e., per-flow measurements are not required. 相似文献
254.
X. Gong W. Ma J.C. Ostrowski K. Bechgaard G.C. Bazan A.J. Heeger S. Xiao D. Moses 《Advanced functional materials》2004,14(4):393-397
The electronic properties, carrier injection, and transport into poly(9,9‐dioctylfluorene) (PFO), PFO end‐capped with hole‐transporting moieties (HTM), PFO–HTM, and PFO end‐capped with electron‐transporting moieties (ETM), PFO–ETM, were investigated. The data demonstrate that charge injection and transport can be tuned by end‐capping with HTM and ETM, without significantly altering the electronic properties of the conjugated backbone. End‐capping with ETM resulted in more closely balanced charge injection and transport. Single‐layer electrophosphorescent light‐emitting diodes (LEDs), fabricated from PFO, PFO–HTM and PFO–ETM as hosts and tris[2,5‐bis‐2′‐(9′,9′‐dihexylfluorene)pyridine‐κ2NC3′]iridium(III ), Ir(HFP)3 as the guest, emitted red light with brightnesses of 2040 cd m–2, 1940 cd m–2 and 2490 cd m–2 at 290 mA cm–2 (16 V) and with luminance efficiencies of 1.4 cd A–1, 1.4 cd A–1 and 1.8 cd A–1 at 4.5 mA cm–2 for PFO, PFO–HTM, and PFO–ETM, respectively. 相似文献
255.
L. V. Kuzmin V. A. Morozov S. O. Starkov B. A. Khadzhi 《Journal of Communications Technology and Electronics》2006,51(11):1283-1289
The models of indoor multipath propagation of wideband and ultrawideband (UWB) signals are considered. Application of these models is recommended by an IEEE working group. In the framework of one of the models corresponding to the line-of-sight conditions, the algorithms for reception of UWB chaotic signals in the presence of reflection from multiple surfaces (echo signals) are proposed and analyzed. The efficiency of reception techniques is estimated from the viewpoint of the error probabilities. Limitations caused by the specific properties of echo signals are revealed, and the methods for improvement of reception quality are discussed. 相似文献
256.
A multipath structure of a ring resonator is proposed to expand the free spectral range. Simulation work indicates that the multipath ring resonator has 25 GHz-adjacent-channel crosstalk of -41 dB, maximum interchannel crosstalk of -18 dB, and -1 dB bandwidth of 4 GHz for a typical expansion factor of 10. The results show the advantages of characteristics compared with a double-cavity ring resonator and a triple-coupler ring resonator. 相似文献
257.
The European Physical Journal E - The isothermal gas adsorption of two hexane isomers (n-hexane and cyclohexane) in the mesopores of MCM-41 silica have been investigated by small angle neutron... 相似文献
258.
J.M. Roth T.G. Ulmer N.W. Spellmeyer S. Constantine M.E. Grein 《Photonics Technology Letters, IEEE》2004,16(9):2009-2011
We demonstrate a novel 40-GHz mode-locked fiber laser that utilizes a single active device to provide both gain and mode-locking. The laser produces pulses as short as 2.2 ps, is tunable over a 27-nm band centered at 1553 nm, and exhibits long-term stability without cavity-length feedback control. The pulse train at 1556 nm was used in a 40-Gb/s transmission experiment over 45 km with a low 0.4-dB power penalty. 相似文献
259.
M A Fennir J A Landry H S Ramaswamy V G S Raghavan 《The Journal of microwave power and electromagnetic energy》2003,38(3):189-196
This study investigates the effect of extraction methods on the color of date syrup and the potential use of microwave power for syrup processing. Sugar solutions were extracted from dates by boiling, soaking and blending. Color and sugar content of the extracted solutions were measured, and the percentage of sugar extracted form the total fruit sugar determined. Boiling was found to be the most efficient method of extraction whereby 74% of total samples sugar was extracted. In contrast, only 54.2% of fruit sugar was extracted by blending and 42% by soaking. In addition, solutions extracted by soaking and blending had a foaming problem in the subsequent concentration process. The extraction method had no effect on the product final color. The extracted solution was concentrated using two heating methods: conventional and microwave heating at a 600 W capacity and a frequency of 2450 MHz applied at three power levels: 10, 7, and 6. In the heating process, 180 minutes were needed to achieve a 77% degrees Brix using convective heating, while it took 81, 138, and 166 minutes of microwave heating at power level 10, 7, and 6, respectively to achieve the same concentration. Water activity of the syrup was measured within a sugar content range of 50 to 80% degrees Brix and the sugar concentration at which the product is shelf stable was determined at 76%. 相似文献
260.
D. G. Pavel’ev N. V. Demarina Yu. I. Koshurinov A. P. Vasil’ev E. S. Semenova A. E. Zhukov V. M. Ustinov 《Semiconductors》2004,38(9):1105-1110
Characteristics of ohmic InGaAs contacts in planar diodes based on semiconductor superlattices with a small-area active region
(1–10 μm2) are studied. The diodes were formed on the basis of short (18 or 30 periods) heavily doped (1018 cm−3) GaAs/AlAs superlattices with a miniband width of 24.4 meV. The reduced resistance of the ohmic contact was equal to 2×10−7 Ω cm2 at room temperature. It is shown that the properties of fabricated planar diodes make it possible to use these diodes later
on in semiconductor devices that operate in the terahertz frequency region in a wide temperature range (4–300 K).
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1141–1146.
Original Russian Text Copyright ? 2004 by Pavel’ev, Demarina, Koshurinov, Vasil’ev, Semenova, Zhukov, Ustinov. 相似文献