High-breakdown-voltage AlInAs/GaInAs junction-modulated HEMT's(JHEMT's) with regrown ohmic contacts by MOCVD

A technology for increasing both the two-terminal gate-drain breakdown and subsequently the three-terminal-off-state breakdown of AlInAs/GaInAs high-electron-mobility transistors (HEMTs) to record values without substantial impact on other parameters is presented. The breakdown in these structures is dependent on the multiplication of electrons injected from the source (channel current) and the gate (gate leakage) into the channel. In addition, holes are generated by high fields at the drain and are injected back into the gate and source electrodes. These phenomena can be suppressed by increasing the gate barrier height and alleviating the fields at the drain. Both have been achieved by incorporating a p⁺-2DEG junction as the gate that modulates the 2DEG gas and by utilizing selective regrowth of the source and drain regions by MOCVD. The 1-μm-gate-length devices fabricated have two-terminal gate-drain and three-terminal-off-state breakdown voltages of 31 V and 28 V, respectively     

High Q inductors for wireless applications in a complementarysilicon bipolar process

Rectangular spiral inductors with Q's over 12 have been built in a high-speed complementary bipolar process and characterized for use in wireless applications. An accurate broadband model for the inductors has been developed, and a test filter and mixer have been built to verify the performance of the inductors and the accuracy of the model     

Effects of nitric oxide annealing of thermally grown silicondioxide characteristics

The effects of nitric oxide (NO) annealing on conventional thermal oxides are reported in this letter. The oxide thickness increase, resulting from NO annealing, is found to be only a few angstroms (<0.5 nm) and independent on the initial oxide thickness. Furthermore, both the electrical and physical characteristics are improved. This technique is expected to achieve sub-5 nm high quality ultrathin dielectric films for the applications in EEPROM's and ULSI     

Control of power factor correcting boost converter withoutinstantaneous measurement of input current

This paper proposes a new control method for the constant-frequency control of power factor correcting boost power converter using a sinewave template modulated PWM signal which eliminates the need for instantaneous measurement of the line current for the switching control of the boost converter. The control strategy is based on the notion that the line current can be forced to trace a deterministic waveform such as a sinusoid by considering the implicit model of the sinewave in the boost converter controller structure. The modulating sinewave template is generated using the line voltage, the boost converter output voltage and the load current. The paper provides the analysis and the design of the controller and presents simulation and implementation results to demonstrate its effectiveness     

Thermodynamic relations along the principal Hugoniot

Some thermodynamic relations are derived along the principal Hugoniot of materials for which the Grüneisen relation is a function of volume only. Rather than being expressed in terms of traditional thermodynamic variables, such as volume and temperature, the relations are expressed in terms of the shock-Hugoniot behavior and of a term grouping that is related to the Grüneisen function. By so doing, a new perspective is gained on the interrelation of thermodynamic quantities along the Hugoniot, which may be of use in developing analytical equations of state. Received 3 November 1997 / Accepted 30 April 1998     

A quaternary partial-response class-IV transceiver for 125 Mbit/sdata transmission over unshielded twisted-pair cables: principles ofoperation and VLSI realization

The paper describes an experimental transceiver for full-duplex transmission at a rate of 125 Mbit/s over unshielded twisted-pair cables of ordinary voice-grade quality, intended for use in a fiber distributed data interface (FDDI) network. Quaternary partial-response class-IV (QPRIV) overall-channel signaling with near-end crosstalk (NEXT) cancellation and maximum-likelihood sequence detection is employed. The spectral shape of the QPRIV signals facilitates equalization and achieving compliance with EMC regulations. Since in an FDDI system each transmitter can be clocked independently, the receiver must cope with phase drift between NEXT signals to be cancelled and signals received from the remote transmitter. With the chosen transceiver architecture, digital-to-analog conversion of transmit signals, analog-to-digital conversion of receive signals, and adaptive NEXT cancellation are performed synchronously with the transmitter clock. The rate change from transmit timing to controlled receive timing is accomplished by an adaptive equalizer in conjunction with an elastic buffer and occasional coefficient shifts. The equalizer is adjusted rapidly enough to allow for a maximal phase drift of ±100 ppm. The implementation of all digital signal-processing functions in a single 0.5 μm CMOS VLSI prototype chip is discussed. The employed standard-cell design resulted in a power consumption of 6 W. Significantly lower power consumption can be achieved by custom design of highly repetitive processing elements     

Superconductivity and normal state resistivity of Ba0.6K0.4BiO3: an optical phonon approach

We discuss the nature of the pairing mechanism and the physical properties associated with the normal as well as the superconducting state of cubic perovskites Ba_0.6K_0.4BiO₃using the strong coupling theory. An interaction potential which includes the Coulomb, electron–optical phonon and electron–plasmon interactions is developed to elucidate the superconducting state. A model dielectric function is constructed with these interactions fulfilling thef-sum rule. The screening parameter (μ^* = 0.26) infers the poor screening of charge carriers. The electron–optical phonon strength (λ) estimated as 0.98 is consistent with an attractive electron–electron interaction and supports the moderate to strong coupling theory. The superconducting transition temperature of Ba_0.6K_0.4BiO₃is then estimated as 32 K. Ziman's formula of resistivity is employed to analyse and compare this with the temperature-dependent resistivity of a single crystal. The estimated contribution from the electron–optical phonon together with the residual resistivity clearly infers a difference when a comparison is made with experimental data. The subtracted data infer a quadratic temperature dependence in the temperature domain (30 ≤ T ≤ 200 K). The quadratic temperature dependence of ρ [ = ρ_exp − (ρ₀ + ρ_e–ph)] is understood in terms of 3D electron–electron inelastic scattering. The presence of these el–el and el–ph interactions allows a coherent interpretation of the physical properties. Analysis reveals that a moderate to strong coupling exists in the Ba_0.6K_0.4BiO₃system and the coupling of electrons with the high-energy optical phonons of the oxygen breathing mode will be a reason for superconductivity. The implications of the above analysis are discussed.     

An algorithm for combined cell-site selection and power control tomaximize cellular spread spectrum capacity

There is much current interest in spread spectrum wireless mobile communications and in particular the issue of spread spectrum wireless capacity. We characterize spread spectrum cellular capacity and provide a combined power control, cell-site selection algorithm that enables this capacity to be achieved. The algorithm adapts users' transmitter power levels and switches them between cell-sites, and it is shown that the algorithm converges to an allocation of users to cells that is optimal in the sense that interference is minimized. The algorithm is decentralized, and can be considered as a mechanism for cell-site diversity and handover. We provide numerical examples to show how effectively the algorithm relieves local network congestion, by switching users in a heavily congested cell to adjacent, less congested cells