Optical orientation of holes in strained nanostructures

A theory describing the optical orientation and Hanle effect for holes in quantum wells or quantum dots based on cubic semiconductors is developed. It is demonstrated that the presence of internal or external strain in quantum-confinement heterostructures leads to the dependence of the Hanle effect on the orientation of the magnetic field with respect to the heterostructure growth axis.     

Noise–Power Optimization of Incremental Data Converters

Incremental data converters (IDCs) are useful in instrumentation and measurement applications, where low-frequency analog signals need to be converted into digital form with high accuracy and low power dissipation. They are particularly well suited for applications where a single analog-digital converter is multiplexed between many channels. This paper proposes an exact design methodology for IDCs, which optimizes the signal-to-noise ratio of the converter under practical design constraints. The process also allows the designer to apportion the noise budget in an arbitrary manner between thermal and quantization noise. The design process is illustrated by an example which describes the optimization of a third-order multiplexed IDC.     

Cost-Efficient SHA Hardware Accelerators

This paper presents a new set of techniques for hardware implementations of Secure Hash Algorithm (SHA) hash functions. These techniques consist mostly in operation rescheduling and hardware reutilization, therefore, significantly decreasing the critical path and required area. Throughputs from 1.3 Gbit/s to 1.8 Gbit/s were obtained for the SHA implementations on a Xilinx VIRTEX II Pro. Compared to commercial cores and previously published research, these figures correspond to an improvement in throughput/slice in the range of 29% to 59% for SHA-1 and 54% to 100% for SHA-2. Experimental results on hybrid hardware/software implementations of the SHA cores, have shown speedups up to 150 times for the proposed cores, compared to pure software implementations.      

A Novel Ordered Nanopore Array Diode Laser

In this work, we have created a new type of structure, the nanopore active layer, for achieving quantization of carrier states in a semiconductor. The nanopore structure consists of a periodic two-dimensional array of localized energy barriers perturbing an otherwise conventional quantum well. This perturbation leads to the formation of intraband forbidden energy gaps which are observed experimentally.     

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.     

Structure of solid monolayers and multilayers of n -hexane on graphite

We present all-atom molecular dynamics simulations ofn-hexane on the basal plane of graphite at monolayer and multilayer coverages. In keeping with experimental data, we find the presence of ordered adsorbed layers both at single monolayer coverage and when the adsorbed layer coexists with excess liquid adsorbate. Using a simulation method that does not impose any particular periodicity on the adsorbed layer, we quantitatively compare our results to the results of neutron diffraction experiments and find a structural transition from a uniaxially incommensurate lattice to a fully commensurate structure on increasing the coverage from a monolayer to a multilayer. The zig-zag backbone planes of all the alkane molecules lie parallel to the graphite surface at the multilayer coverage, while a few molecules are observed to attain the perpendicular orientation at monolayer coverage. Dedicated to Professor C N R Rao on his 70th birthday     

Distributed Transmit Antenna Selection (DTAS) Under Performance or Energy Consumption Constraints

Motivated by the transmit antenna selection (TAS) concept, used in Multiple-Input-Multiple-Output systems, we argue for distributed transmit antenna selection (DTAS), which corresponds to a method of selecting a subset of available relays in cooperative diversity systems. Assuming amplify and forward relays, the proposed selection method represents a low-complexity tool for determining the optimum relaying set. Two optimization problems are studied: the error probability minimization subject to total energy consumption constraints, and the dual one, the total energy consumption minimization under error performance constraints. Numerical examples verify the advantage of the proposed method in adapting the number of relaying terminals to the desired performance-consumption tradeoff.     

Investigation into Polarization of Unloaded and Loaded Microstrip Square-Ring Antennas

The polarization characteristic of unloaded and loaded square-ring microstrip antennas is investigated. Several different loading types like single-stub, dual-stub, notch, gap and shorting-pin are considered and their effects are studied. Loading enables feeding using a 50-Omega probe. The simulation and measurement results show that the loading techniques excite a loaded TMy ₁₁ mode that is orthogonal to the unloaded TMx ₁₁ mode. This indicates that by loading the ring antenna its polarization can be switched adaptively. However, the purity of the loaded and unloaded modes depends on the loading type. For some loading types like gap and shorting-pin, the excitation of the unloaded mode seems negligible, in comparison to the loadings by stub and notch. For the stub and notch loaded antennas the unloaded mode is also present, and its excitation efficiency is frequency dependent. Thus, their polarization plane, which is due to both loaded TMy ₁₁ and unloaded TMx ₁₁ modes, also becomes frequency dependant. The results of this investigation can be useful in selecting the loading methods for high-impedance microstrip ring antennas, and control of their impedance and polarization. The knowledge of the antenna polarization is essential in communications, and its dependence on the loading type can be used as an important parameter in design of adaptive antennas and sensors.     

Mathematical modelling of the oxidation of nickel titanium alloys

A one-dimensional bulk reaction model for the oxidation of nickeltitanium is formulated, with preferential oxidation of titaniumbeing included. The modelling is directed at the better understandingof the dominant mechanisms involved in the oxidation processand their significance for the biocompatibility of the alloy.Two different regimes for the relative diffusivities of oxygenand the metals are investigated. By assuming fast bulk reactions,different asymptotic structures emerge in different parameterregimes and the resulting models take the form of moving boundaryproblems. Different profiles of nickel concentration are obtained:in particular a nickel-rich layer (observed in practice) ispresent below the oxide/metal interface for the case when oxygenand the metals diffuse at comparable rates.