Isotope-selective laser photodetachment for 129I accelerator mass spectrometry

2D coordination polymer iron(II) spin crossover complexes containing 3,5-lutidine with host framework Fe(3,5-lutidine)₂Ni(CN)₄were synthesized. Their spin crossover properties were studied by temperature dependent ⁵⁷Fe Mössbauer spectroscopy. Materials show gradual incomplete spin crossover with distinct thermochromism, while only 25 % of iron(II) ions are switched to the low spin state at 80 K, as determined by a detailed ⁵⁷Fe Mössbauer study.     

Development of high resolution resonance ionization mass spectrometry for trace analysis of 93mNb

⁹³Nb(n, n′)^93mNb reaction allows retrospective estimation of integrated fast neutron dose in nuclear reactor. We proposed isomer-selective trace analysis of ^93mNb by Resonance Ionization Mass Spectrometry (RIMS) combined with a gas-jet atomic source and an injection locked Ti:Sapphire laser system operated at several kHz. Resonant ionization spectroscopy of Nb in gas-jet using Ti:Sapphire laser was demonstrated.     

Time-series analysis of foreign exchange rates using time-dependent pattern entropy

Time-dependent pattern entropy is a method that reduces variations to binary symbolic dynamics and considers the pattern of symbols in a sliding temporal window. We use this method to analyze the instability of daily variations in foreign exchange rates, in particular, the dollar–yen rate. The time-dependent pattern entropy of the dollar–yen rate was found to be high in the following periods: before and after the turning points of the yen from strong to weak or from weak to strong, and the period after the Lehman shock.     

In-situ X-ray diffraction study on β-CrOOH at high pressure and high-temperature

ABSTRACT

High pressure hydrous phases with distorted rutile-type structure have attracted much interest as potential water reservoirs in the Earth’s mantle. An in-situ X-ray diffraction study of β-CrOOH was performed at high pressures of up to 6.2?GPa and high-temperatures of up to 700?K in order to clarify the temperature effect on compression behaviors of β-CrOOH. The P-V-T data fitted to a Birch–Murnaghan equation of state yielded the following results: isothermal bulk modulus K_T0?=?191(4)?GPa, temperature derivative (?K_T/?T)_P?=??0.04(2)?GPa?K^?1, and volumetric thermal expansion coefficient α?=?3.3(2)?×?10^?5?K^?1. In this study, at 300?K, the a-axis became less compressible at pressures above 1–2?GPa. We found that the pressure where the slopes of a/b and a/c ratios turned positive increased with temperature. This is the first experimental study indicating the temperature dependence of the change in the axial compressibility in distorted rutile-type M³⁺OOH.     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.     

A 62-ns 16-Mb CMOS EPROM with voltage stress relaxation technique

To meet the increasing demand for higher-density and faster EPROMs, a 16-Mb CMOS EPROM has been developed based on 0.6-μm N-well CMOS technology. In scaled EPROMs, it is important to guarantee device reliability under high-voltage operation during programming. By employing internal programming-voltage reduction and new stress relaxation circuits, it is possible to keep an external programming voltage V_pp of 12.5 V. The device achieves a 62-ns access time with a 12-mA operating current. A sense-line equalization and data-out latching scheme, made possible by address transition detection (ATD), and a bit-line bias circuit with two types of depletion load led to the fast access time with high noise immunity. This 16-Mb EPROM has pin compatibility with a standard 16-Mb mask-programmable ROM (MROM) and is operative in either word-wide or byte-wide READ mode. Cell size and chip size are 2.2 μm×1.75 μm and 7.18 mm×17.39 mm, respectively     

On a Distributed Cognitive MAC Protocol for IEEE 802.11s Wireless Mesh Networks

A distributed frequency agile medium access control (MAC) extension to the IEEE 802.11s for the next generation wireless mesh networks is proposed. The introduced protocol enhancements are capable of concurrent deployment of existing frequency opportunities in order to coordinate simultaneous data transmissions. The root concept is mainly based on the deployment of well-known ISM frequency bands, where the legacy 802.11-based wireless equipments operate, as the common control channel in order to establish contemporaneous transmissions. We apply the aforementioned key concept to the IEEE 802.11s common channel framework to attain two important goals: To improve the channel utilization using the concept of cognitive radio, and to lower the access delay. Through extensive event-driven simulations, taking into account primary user appearance in non-ISM frequency bands, performance of the proposed MAC enhancement is evaluated showing its higher efficiency compared to the existing solutions, in addition to its better wireless medium management.     

The influence of dopant species on thermal stability of NiSi film

We investigated the relationship between thermal stability of NiSi films and the implanted dopant species on Si substrates. The most stable NiSi layer appeared on Boron-implanted Si substrate, where the formation of pseudo-epitaxial transrotational structure was observed, just in case that the dose of boron is more than 5e15 atoms/cm². This unique crystallographic orientation of NiSi film on Boron-implanted substrate is a key role of thermal stability because thermal stress at grain boundary can be diminished by peculiar arrangement of transrotational domains, owing to the anisotropy in coefficient of thermal expansion (CTE) of NiSi.     

Stress-induced voiding in stacked tungsten via structure

The stress-induced voiding (SV) in Al-alloy films with stacked tungsten via structures was investigated. Voids were found in interconnections with stacked and borderless vias that had resistance increase after the aging tests. Failure occurs most frequently when the test structures are stored at approximately 250°C. This behavior can be explained by the diffusion creep model similar to SV in a flat line [1]. Finite-element simulations show that tensile stress in Al-lines between upper and lower plugs increases with temperature increase over 175°C. Al grains on W-plugs were found to have high-angle crystalline misorientation in transmission electron microscopy (TEM) observation. The tensile stress and grain misorientation should accelerate the void growth during high temperature storage. O₂ plasma post metal etch treatment is effective to eliminate SV in stacked via structure.     

The behavior of a spherical bubble near a solid wall in a compressible liquid

Summary The behavior of a spherical bubble near a solid wall is analysed by considering the liquid compressibility. The equation of motion of the bubble with first order correction for the effects of liquid compressibility and solid wall is derived. The equation obtained here coincides with the known result in case of L or C . Further experimental study is made on the motion of bubbles produced by a spark discharge in water. The theoretical results are in good agreement with the experiments.

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Das Verhalten einer kugelförmigen Blase in einer kompressiblen Flüssigkeit in der Nähe einer festen Wand

Übersicht Bei Berücksichtigung der Flüssigkeitskompressibilität wird das Verhalten einer kugelförmigen Blase in der Nähe einer festen Wand analysiert. Die Gleichung der Bewegung der Blase wird mit der Korrektur erster Ordnung für den Einfluß der Flüssigkeitskompressibilität und der festen Wand angegeben. Aus der erhaltenen Gleichung wird für L oder C das bekannte Ergebnis hergeleitet. Darüber hinaus wird eine experimentelle Untersuchung der Blasenbewegung durchgeführt. Die Blase wird mit Hilfe von Funkendurchschlägen zwischen Elektroden in Wasser erzeugt. Die theoretischen Ergebnisse stimmen gut mit den Experimenten überein.