High-speed, polyimide-based semi-insulating planar buried heterostructures

We describe planar buried heterostructure lasers which have low capacitance (lpF), large bandwidth (19GHz), high power (>20mW/facet) and high temperature operation (100°C). These lasers are very suitable for long-distance, highspeed digital and analogue signal transmission.     

Ion Flux from the Cathode Region of a Vacuum Arc

This paper reviews the properties of the cathode ion flux generated in the vacuum arc. The structure and distribution of mass erosion from individual cathode spots and the characteristics of current carriers from the cathode region at moderate arc currents are described. An appreciable ion flux (～10% of total arc current) is emitted from the cathode of a vacuum arc. This ion flux is strongly peaked in the direction of the anode, though some ion flux may be seen even at angles below the plane of the cathode surface. The observed spatial distribution of the ion flux is expressed quite well as an exponential function of solid angle. The ion flux is quite energetic, with average ion potentials much larger than the arc voltage, and generally contains a considerable fraction of multiply-charged ions. The average ion potential and ion multiplicity increase significantly for cathode materials with higher arc voltages, but decrease with increasing arc current for a particular material. The main theories concerning ion acceleration in cathode spots are the potential hump theory (PH), which assumes that all ions are created at the same potential, and the gas dynamic theory (GD), which assumes that all ions are created with the same flow velocity. Experimental data on the potentials and energies of individual ions indicates that these theories in their original forms are not quite correct, however extensions or modifications of the PH and GD theories seem very likely to be able to predict correct values for the charge states, potentials, and energies of individual ions.     

Self-aligning planarization and passivation for integration applications in III-V semiconductor devices

This work reports an easy planarization and passivation approach for the integration of III-V semiconductor devices. Vertically etched III-V semiconductor devices typically require sidewall passivation to suppress leakage currents and planarization of the passivation material for metal interconnection and device integration. It is, however, challenging to planarize all devices at once. This technique offers wafer-scale passivation and planarization that is automatically leveled to the device top in the 1-3-/spl mu/m vicinity surrounding each device. In this method, a dielectric hard mask is used to define the device area. An undercut structure is intentionally created below the hard mask, which is retained during the subsequent polymer spinning and anisotropic polymer etch back. The spin-on polymer that fills in the undercut seals the sidewalls for all the devices across the wafer. After the polymer etch back, the dielectric mask is removed leaving the polymer surrounding each device level with its device top to atomic scale flatness. This integration method is robust and is insensitive to spin-on polymer thickness, polymer etch nonuniformity, and device height difference. It prevents the polymer under the hard mask from etch-induced damage and creates a polymer-free device surface for metallization upon removal of the dielectric mask. We applied this integration technique in fabricating an InP-based photonic switch that consists of a mesa photodiode and a quantum-well waveguide modulator using benzocyclobutene (BCB) polymer. We demonstrated functional integrated photonic switches with high process yield of >90%, high breakdown voltage of >25 V, and low ohmic contact resistance of /spl sim/10 /spl Omega/. To the best of our knowledge, such an integration of a surface-normal photodiode and a lumped electroabsorption modulator with the use of BCB is the first to be implemented on a single substrate.     

Training analysis of adaptive interference suppression fordirect-sequence code-division multiple-access systems

This paper studies the transient behavior of an adaptive near-far resistant receiver for direct-sequence (DS) code-division multiple-access (CDMA) known as the minimum mean-squared error (MMSE) receiver. This receiver structure is known to be near-far resistant and yet does not require the large amounts of side information that are typically required for other near-far resistant receivers. In fact, this receiver only requires code timing on the one desired signal. The MMSE receiver uses an adaptive filter which is operated in a manner similar to adaptive equalizers. Initially there is a training period where the filter locks onto the signal that is sending a known training sequence. After training, the system can then switch to a decision-directed mode and send actual data. This work examines the length of the training period needed as a function of the number of interfering users and the severity of the near-far problem. A standard least mean-square (LMS) algorithm is used to adapt the filter and so the trade-off between convergence and excess mean-squared error is studied. It is found that in almost all cases a step size near 1.0/(total input power) gives the best speed of convergence with a reasonable excess mean-squared error. Also, it is shown that the MMSE receiver can tolerate a 30-40 dB near-far problem without excessively long convergence time     

Fermi and Coulomb correlations in the 21 S state of the helium isoelectronic sequence

The Fermi and Coulomb holes of the 2¹ S state of the helium isoelectronic sequence are investigated. Several interesting differences between the results obtained and those which might be expected on the basis of the corresponding 2³ S state are pointed out and discussed.     

Calculation of Siegert eigenvalues for molecular systems: results for He(21,3S)+ H

The variational calculation of Siegert eigenvalues has previously been shown to provide reliable positions and widths for atomic resonances. This approach is herein extended to molecular problems, and the first such calculations for a molecular autoionizing system, He(2^1,3S)+H→ He+H⁺+e^?, are reported.     

Evaluation of parameters critical to observing proteins inside living Escherichia coli by in-cell NMR spectroscopy

Our recently developed in-cell NMR procedure now enables one to observe protein conformations inside living cells. Optimization of the technique demonstrates that distinguishing the signals produced by a single protein species depends critically on protein overexpression levels and the correlation time in the cytoplasm. Less relevant is the selective incorporation of (15)N. Poorly expressed proteins, insoluble proteins, and proteins that cannot tumble freely due to associations within the cell cannot yet be observed. We show in-cell NMR spectra of bacterial NmerA and human calmodulin and discuss limitations of the technique as well as prospects for future applications.     

The measure of non-normal sets

Summary It is well-known that almost every number in [0, 1] is normal in base 2, in the sense of Lebesgue measure. Kahane and Salem asked whether the same is true with respect to any Borel measure whose Fourier-Stieltjes coefficients vanish at infinity — in other words, whether the set of non-normal numbers is a set of uniqueness in the wide sense. We show that this is not the case. In fact, we give best-possible conditions on the rate of decay of in order that -almost every number be normal. The techniques include, on the one hand, probability measures with respect to which the binary digits in [0, 1] are independent only by blocks, rather than individually, and on the other hand, the strong law of large numbers for weakly correlated random variables.This work was partially supported by an NSF Graduate Fellowship, NSF Grant MCS-82-01602, and an AMS Research Fellowship.     

Completely regioselective, highly stereoselective syntheses of cis-Bisfullerene

cis-Bisfullerene[60] adducts of 6,13-disubstituted pentacenes (R = Ph, 4'-hydroxymethylphenyl) are synthesized in 75% to 85% isolated yields under kinetically controlled Diels-Alder conditions. The cycloadditions are completely regioselective and highly stereoselective, with only traces of the diastereomeric trans-bisfullerene[60] adducts forming.