Synthesis and characterization of new polyamides derived from di(4-cyanophenyl)isosorbide

New optically active polyamides were synthesized according to two ways: using a microwave-assisted polycondensation of an optically active isosorbide-derived diacylchloride with different aromatic diamines in NMP and using interfacial polymerization from an isosorbide-derived diamine with different diacylchlorides. The polymers are obtained with inherent viscosities in the range from 0.11 to 1.05 dL/g. The DSC and TGA measurements clearly demonstrate the high thermal stability of these polymers when considering the range of the melting points from 200 °C to 300 °C and the absence of decomposition till 350 °C.     

Préparation d'isoxazoles trisubstitués par réduction chimique et électrochimique d'α-acyl β-nitrostilbènes

Nitration of α-acylstilbenes with dinitrogen tetroxide leads to corresponding Z-α-acyl-β-nitrostilbenes. By chemical or electochemical reduction of these compounds, trisubstituted isoxazoles were prepared in good yields.     

Préparation de quelques 4-nitroisoxazoles à partir de pseudonitrosites de cétones éthyléniques du type chalcone

The Synthesis of some 4-Nitroisoxazoles from Pseudonitrosites of Chalcones The action of dinitrogen trioxide with α,β-unsaturated ketones of the chalcone type leads to pseudonitrosites (Table 1) which are cyclized to 4-nitro-3,5-diarylisoxazoles (Table 2).     

A diatropic ring current in a fluorofullerene trannulene

Ipsocentric current-density maps for a fluorofullerene derivative, C60F15H3, modelling the addition pattern of the experimentally characterised C60F15[CBr(CO2Et)2]3 which contains an [18]trans-annulene system, reveal a diamagnetic ring current dominated by the contribution of the four HOMO electrons, as in a classical (4n + 2) aromatic annulene.     

Action du chlorure de nitrosyle sur le trichloréthylène et sur le tétrachloréthylène

Nitrosyl chloride is only chlorinating in darkness and above 100°. In the sun light and at room temperature it reacts as a chlorinating, nitrosating, nitrating and oxidizing agent. With trichlorethylene in fact pentachlorethane 1,1,1,2-tetrachloro-2-nitrosoethane, 1,1,1,2-tetrachloro-2-nitroethane, dichloracetic acid and a compound of empirical formula C₄H₂Cl₅NO₂ are obtained. Tetrachloroethylene carried to hexachlorethane, pentachloronitrosoethane and tetrachloro-2-(pentachlorethyl)-1,2-oxazetidine. Introduced nitrosyl chloride provided nitrogen monoxide prouved by gaz chromatography. This monoxide reacted afterwards to give nitrogen which is the single nitrogenous gazeous compound. Carbondioxide is a minor component of the gaz.     

Processing aspects in the low-frequency noise of nMOSFETs on strained-silicon substrates

The impact of different processing factors on the low-frequency (LF) noise of nMOSFETs fabricated in strained-silicon (SSi) substrates will be described. It is shown that the use of an SSi substrate can yield improved LF noise performance compared with standard Czochralski silicon material. This is demonstrated for both full-wafer and selective epitaxial SSi material. The lower 1/f noise points to an improved gate oxide quality, i.e., with a lower interface and bulk defect density, and is correlated with the low-field mobility or transconductance of the transistors. At the same time, it will be demonstrated that there exist defect-related LF noise mechanisms, which generally give rise to excess generation-recombination (GR) noise. Associated with this GR noise, a degradation of either the OFF-state leakage current or the mobility (transconductance) of the devices is observed. It is clear that noise is a sensitive parameter to local defectiveness and may be a useful tool for both materials' characterization and the analysis of processing-related device degradation mechanisms.     

Impact of the Ge Content on the Bandgap-Narrowing Induced Leakage Current of Recessed $hbox{Si}_{1 - x}hbox{Ge}_{x}$ Source/Drain Junctions

The purpose of this paper is to evaluate the impact of process-induced stress on the generation current of fully strained Si_1- xGex source/drain junctions. The Ge content of the compressively strained SiGe epitaxial layer plays a key role in the tensile stress levels present in the underlying Si substrate. Current-voltage (I-V) measurements were employed to further investigate the leakage current enhancement due to the stress-induced bandgap narrowing in the Si depletion region, when no extended defects are formed. An empirical approach is proposed to describe the Ge content dependence of the bandgap-shrinkage-induced leakage current. An increase of the intrinsic carrier concentration as a function of the stress mismatch is observed. Moreover, the role of the epilayer thickness in the generation current is also discussed.     

Detailed modeling of sub-100-nm MOSFETs based on Schro/spl uml/dinger DD per subband and experiments and evaluation of the performance gap to ballistic transport

We analyze in detail the requirements for the detailed physical modeling of nanoscale MOSFETs and show that Schro/spl uml/dinger drift-diffusion per subband simulations are adequate for the inverse modeling of bulk-Si MOSFETs with gate length down to 40 nm (channel length down to 26 nm) from their dc electrical characterization. We show that a proper treatment of quantum effects both in the channel and in the polysilicon gate through the direct solution of Schro/spl uml/dinger equation, and a transport model based on two-dimensional subbands are required for accurate and-after calibration-predictive modeling. The model is included in the NANOTCAD2D code (Curatola and Iannaccone, 2003). We also evaluate the performance gap to ballistic transport, by comparing the experiments with simulations based on a fully ballistic transport model on the devices structures extracted with the inverse modeling procedure.     

Crystallographic relations in the Fe?Zn system

The crystallographic relations between the various Fe Zn compounds have been investigated by means of single-crystal X-ray diffraction techniques. These techniques were applied to primary single crystals of each compound upon which after cooling a single crystalline layer of the neighbouring compound richer in zinc was grown. In this way it has been possible to determine relationships in the sequence α – Γ – Γ₁ – δ: No crystallographic relationship could be established for δ–ζ because it proved impossible to grow a single crystalline layer of ζ on δ. The apparently bad compatibility of the two lattices was reflected in the nucleation problems which were always encountered during efforts to grow ζ on δ. The influence of the relationships on the actually observed textures in the δ and ζ layers of hot dip galvanized specimens is discussed.     

Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer

Van der Waals growth of GaAs on silicon using a two‐dimensional layered material, graphene, as a lattice mismatch/thermal expansion coefficient mismatch relieving buffer layer is presented. Two‐dimensional growth of GaAs thin films on graphene is a potential route towards heteroepitaxial integration of GaAs on silicon in the developing field of silicon photonics. Hetero‐layered GaAs is deposited by molecular beam epitaxy on graphene/silicon at growth temperatures ranging from 350 °C to 600 °C under a constant arsenic flux. Samples are characterized by plan‐view scanning electron microscopy, atomic force microscopy, Raman microscopy, and X‐ray diffraction. The low energy of the graphene surface and the GaAs/graphene interface is overcome through an optimized growth technique to obtain an atomically smooth low­ temperature GaAs nucleation layer. However, the low adsorption and migration energies of gallium and arsenic atoms on graphene result in cluster‐growth mode during crystallization of GaAs films at an elevated temperature. In this paper, we present the first example of an ultrasmooth morphology for GaAs films with a strong (111) oriented fiber‐texture on graphene/silicon using quasi van der Waals epitaxy, making it a remarkable step towards an eventual demonstration of the epitaxial growth of GaAs by this approach for heterogeneous integration.